|
|
All Technical Committee Conferences (Searched in: All Years)
|
|
Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
|
Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
MRIS, ITE-MMS |
2013-07-12 15:45 |
Tokyo |
Chuo Univ. |
3-Dimensional Phase Change Memory Enabling High Density and High Speed Storage Takashi Kobayashi, Masaharu Kinoshita, Yoshitaka Sasago (Hitachi) MR2013-11 |
A three-dimensional vertical chain-cell-type phase change memory (VCCPCM) for next-generation large-capacity storage was... [more] |
MR2013-11 pp.31-34 |
ICD, SDM |
2012-08-02 15:55 |
Hokkaido |
Sapporo Center for Gender Equality, Sapporo, Hokkaido |
Scalable 3-D vertical chain-cell-type phase-change memory with 4F2 poly-Si diodes Masaharu Kinoshita, Yoshitaka Sasago, Hiroyuki Minemura, Yumiko Anzai, Mitsuharu Tai, Yoshihisa Fujisaki, Shuichi Kusaba, Tadao Morimoto, Takashi Takahama, Toshiyuki Mine, Akio Shima, Yoshiki Yonamoto, Takashi Kobayashi (Hitachi) SDM2012-74 ICD2012-42 |
A three-dimensional (3-D) vertical chain-cell-type phase-change memory (VCCPCM) for next-generation large-capacity stora... [more] |
SDM2012-74 ICD2012-42 pp.59-63 |
SDM |
2011-11-10 13:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Phase-change memoy driven by poly-Si transistor enabling three-dimensional stacking Yoshitaka Sasago, Masaharu Kinoshita, Hiroyuki Minemura, Yumiko Anzai, Mitsuharu Tai, Kenzo Kurotsuchi, Seiichi Morita, Toshikazu Takahashi, Takashi Takahama, Tadao Morimoto, Toshiyuki Mine, Akio Shima, Takashi Kobayashi (Hitachi) SDM2011-117 |
A phase-change memory (PCM) driven by poly-Si MOS transistors was fabricated. The thin phase-change-material layer depos... [more] |
SDM2011-117 pp.11-15 |
SDM, ICD |
2011-08-26 09:50 |
Toyama |
Toyama kenminkaikan |
Phase-change memory driven by poly-Si MOS transistor with low cost and high-programming throughput Yoshitaka Sasago, Masaharu Kinoshita, Hiroyuki Minemura, Yumiko Anzai, Mitsuharu Tai, Kenzo Kurotsuchi, Seiichi Morita, Toshikazu Takahashi, Takashi Takahama, Tadao Morimoto, Toshiyuki Mine, Akio Shima, Takashi Kobayashi (Hitachi) SDM2011-85 ICD2011-53 |
A phase-change memory (PCM) driven by poly-Si MOS transistors was fabricated. The thin phase-change-material layer depos... [more] |
SDM2011-85 ICD2011-53 pp.75-78 |
ITE-MMS, MRIS |
2009-10-09 10:25 |
Fukuoka |
FUKUOKA traffic center |
[Invited Talk]
Low cost technology of phase change memory with low-contact-resistivity poly-Si selection diode Yoshitaka Sasago, Masaharu Kinoshita, Takahiro Morikawa, Kenzo Kurotsuchi, Satoru Hanzawa, Toshiyuki Mine, Akio Shima, Yoshihisa Fujisaki, Hiroshi Moriya, Norikatsu Takaura, Kazuyoshi Torii (Hitachi) MR2009-26 |
We have fabricated the cross-point phase change memory with a selection diode made of poly-Si. The selection diode was f... [more] |
MR2009-26 pp.31-35 |
ICD, SDM |
2009-07-17 12:00 |
Tokyo |
Tokyo Institute of Technology |
Cross-Point phase change memory with 4F2 cell size driven by low-contact resistivity poly-si diode Yoshitaka Sasago, Masaharu Kinoshita, Takahiro Morikawa, Kenzo Kurotsuchi, Satoru Hanzawa, Toshiyuki Mine, Akio Shima, Yoshihisa Fujisaki, Hitoshi Kume, Hiroshi Moriya, Norikatsu Takaura, Kazuyoshi Torii (Hitachi) SDM2009-112 ICD2009-28 |
We have fabricated the cross-point phase change memory with a selection diode made of poly-Si. The selection diode was f... [more] |
SDM2009-112 ICD2009-28 pp.79-83 |
ICD, SDM |
2006-08-18 15:25 |
Hokkaido |
Hokkaido University |
Impact of Random Telegraph Signals on Scaling of Multilevel Flash Memories Hideaki Kurata, Kazuo Otsuga, Akira Kotabe, Shinya Kajiyama, Taro Osabe, Yoshitaka Sasago (Hitachi), Shunichi Narumi, Kenji Tokami, Shiro Kamohara, Osamu Tsuchiya (Renesas) |
This paper describes for the first time the observation of the threshold voltage (Vth) fluctuation due to random telegra... [more] |
SDM2006-153 ICD2006-107 pp.161-166 |
ICD, SDM |
2005-08-19 14:15 |
Hokkaido |
HAKODATE KOKUSAI HOTEL |
Selective-Capacitance Constant-Charge-Injection Programming Scheme for High-Speed Multilevel AG-AND Flash Memories Kazuo Otsuga, Hideaki Kurata (Hitachi, Ltd.), Kenji Kozakai, Satoshi Noda (Renesas), Yoshitaka Sasago, Tsuyoshi Arigane, Tetsufumi Kawamura, Takashi Kobayashi (Hitachi, Ltd.) |
We developed a selective-capacitance constant-charge-injection programming scheme for multilevel AG-AND flash memories. ... [more] |
SDM2005-153 ICD2005-92 pp.61-66 |
ICD |
2005-04-14 16:15 |
Fukuoka |
|
4Gb Multilevel AG-AND Flash Memory with 10MB/s Programming Throughput Hideaki Kurata, Yoshitaka Sasago, Kazuo Otsuga, Tsuyoshi Arigane, Tetsufumi Kawamura, Takashi Kobayashi, Hitoshi Kume (Hitachi), Kazuki Homma, Kenji Kozakai, Satoshi Noda, Teruhiko Ito, Masahiro Shimizu, Yoshihiro Ikeda, Osamu Tsuchiya, Kazunori Furusawa (RENESAS) |
We fabricated a 4Gb multilevel AG-AND flash memory using 90nm CMOS technology. By using an inversion-layer local-bitline... [more] |
ICD2005-11 pp.53-58 |
|
|
|
Copyright and reproduction :
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
|
[Return to Top Page]
[Return to IEICE Web Page]
|