| Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
| SDM |
2022-06-21
16:40 |
Aichi |
Nagoya Univ. VBL3F |
[Invited Talk]
Low Voltage Operation of CMOS Inverter based on WSe2 n/p FETs
Takamasa Kawanago, Takahiro Matsuzaki, Ryosuke Kajikawa, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi (Tokyo Tech)  SDM2022-30 |
[more] |
SDM2022-30
pp.23-26 |
| SDM |
2020-11-20
11:30 |
Online |
Online |
[Invited Talk]
Three-dimensional device simulation of Si IGBTs
-- Investigation of physical models and comparisons with measurements --
Naoyuki Shigyo, Masahiro Watanabe, Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa (Tokyo Tech), Akira Nakajima (AIST), Katsumi Satoh (Mitsubishi Electric), Tomoko Matsudai (Toshiba), Takuya Saraya, Toshihiko Takakura, Kazuo Itou, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi (The Univ. of Tokyo), Hitoshi Wakabayashi, Iriya Muneta (Tokyo Tech), Shin-ichi Nishizawa (Kyushu Univ.), Kazuo Tsutsui (Tokyo Tech), Toshiro Hiramoto (The Univ. of Tokyo), Hiromichi Ohashi, Hiroshi Iwai (Tokyo Tech) SDM2020-30 |
[more] |
SDM2020-30
pp.36-40 |
| SDM |
2019-11-08
13:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Three-dimensional accurate TCAD simulation of trench-gate Si-IGBTs
Masahiro Watanabe, Naoyuki Shigyo, Takuya Hoshii, Kazuyoshi Furukawa, Kuniyuki Kakushima (Tokyo Tech.), Katsumi Satoh (Mitsubishi Electric Corp.), Tomoko Matsudai (Toshiba Electronic Devices & Storage Corp.), Takuya Saraya, Toshihiko Takakura, Kazuo Itou, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi (The University of Tokyo), Iriya Muneta, Hitoshi Wakabayashi (Tokyo Tech.), Akira Nakajima (AIST), Shin-ichi Nishizawa (Kyushu University, Kasuga), Kazuo Tsutsui (Tokyo Tech.), Toshiro Hiramoto (The University of Tokyo), Hiromichi Ohashi, Hiroshi Iwai (Tokyo Tech.) SDM2019-77 |
In this work, excellent agreement between 3D TCAD simulations and experimental current-voltage characteristics were obta... [more] |
SDM2019-77
pp.45-48 |
| SDM, ICD, ITE-IST [detail] |
2019-08-08
10:25 |
Hokkaido |
Hokkaido Univ., Graduate School /Faculty of Information Science and |
[Invited Lecture]
3300V Scaled IGBT Switched by 5V Gate Drive
Toshiro Hiramoto, Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi (Univ. of Tokyo), Masanori Tsukuda (Green Electronics Research Inst.), Yohichiroh Numasawa (Meiji Univ,), Katsumi Satoh (Mitsubishi Electric Corp), Tomoko Matsudai (Toshiba Electronic Devices & Storage Corp.), Wataru Saito (Kyushu Univ.), Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Naoyuki Shigyo, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai (Tokyo Inst. of Technology), Atsushi Ogura (Meiji Univ.), Shin-ichi Nishizawa (Kyushu Univ.), Ichiro Omura (Kyushu Inst. of Tech.), Hiromichi Ohashi (Tokyo Inst. of Tech.) SDM2019-42 ICD2019-7 |
[more] |
SDM2019-42 ICD2019-7
pp.31-34 |
| SDM |
2019-06-21
14:30 |
Aichi |
Nagoya Univ. VBL3F |
[Invited Lecture]
Observation of three dimensional atomic arrangements of active and inactive impurities heavy doped in silicon by using photoelectron holography method
Kazuo Tsutsui (Tokyo Tech), Tomohiro Matsushita (JASRI), Kotaro Natori, Tatsuhiro Ogawa (Tokyo Tech), Takayuki Muro (JASRI), Yoshitada Morikawa (Osaka Univ.), Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi (Tokyo Tech), Kouichi Hayashi (Nagoya Inst. Tech.), Fumihiko Matsui (Inst. Molecular Science), Toyohiko Kinoshita (JASRI) SDM2019-30 |
Photoelectron holography method combined with first-principles simulations determined the local three-dimensional atomic... [more] |
SDM2019-30
pp.23-27 |
| SDM |
2019-01-29
15:40 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss
Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi (Univ. of Tokyo), Masanori Tsukuda (GRIK), Yohichiroh Numasawa (Meiji Univ.), Katsumi Satoh (Mitsubishi Electric), Tomoko Matsudai, Wataru Saito (Toshiba Electronic Devices & Storage), Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Naoyuki Shigyo, Kazuo Tsutsui, Hiroshi Iwai (Tokyo Tech), Atsushi Ogura (Meiji Univ.), Shin-ichi Nishizawa (Kyushu Univ.), Ichiro Omura (Kyushu Inst. of Tech.), Hiromichi Ohashi (Tokyo Tech), Toshiro Hiramoto (Univ. of Tokyo) SDM2018-90 |
Functional trench-gated 1200V-10A class Si-IGBTs, designed based on the scaling concept, were fabricated, and 5V gate vo... [more] |
SDM2018-90
pp.39-44 |
| SDM |
2017-06-20
15:15 |
Tokyo |
Campus Innovation Center Tokyo |
Capacitance Analyses of p-ch GaN MOS Structure on Polarization ― Junction Substrate
Rumi Takayama, Takuya Hoshii (Tokyo Inst. of Tech.), Akira Nakajima (AIST), Shinichi Nishizawa (Kyushu Univ.), Hiromichi Ohashi, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kazuo Tsutsui (Tokyo Inst. of Tech.) SDM2017-27 |
[more] |
SDM2017-27
pp.31-34 |
| SDM |
2017-06-20
16:10 |
Tokyo |
Campus Innovation Center Tokyo |
Low-Carrier-Density Sputtered-MoS2 Film by Vapor-Phase- Sulfurization
Kentaro Matsuura, Takumi Ohashi, Iriya Muneta (Tokyo Tech), Seiya Ishihara (Meiji Univ.), Kuniyuki Kakushima, Kazuo Tsutsui (Tokyo Tech), Atsushi Ogura (Meiji Univ.), Hitoshi Wakabayashi (Tokyo Tech) |
[more] |
|
| SDM |
2016-06-29
13:30 |
Tokyo |
Campus Innovation Center Tokyo |
A resistive switching device based on breakdown and local anodic oxidation
Kuniyuki Kakushima, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai (Tokyo Tech.) SDM2016-38 |
We propose a resistive switching device with CeOx and SiO2 stacked layers on a Si substrate. Breakdown spots are created... [more] |
SDM2016-38
pp.33-36 |
| SDM |
2016-06-29
16:40 |
Tokyo |
Campus Innovation Center Tokyo |
MoS2 film formation by RF magnetron sputtering for thin film transistors
Takumi Ohashi, Kentaro Matsuura (Tokyo Tech), Seiya Ishihara, Yusuke Hibino, Naomi Sawamoto (Meiji Univ.), Kuniyuki Kakushima, Kazuo Tsutsui (Tokyo Tech), Atsushi Ogura (Meiji Univ.), Hitoshi Wakabayashi (Tokyo Tech) SDM2016-46 |
Multi-layered MoS2 has been expected as a new candidate for complementary TFT material owing to its promising characteri... [more] |
SDM2016-46
pp.75-78 |
| SDM |
2012-06-21
15:05 |
Aichi |
VBL, Nagoya Univ. |
Detection of impurities having various chemical bonding states and their depth profiles in ultra shallow junctions
Kazuo Tsutsui, Jun Kanehara, Youhei Miyata (Tokyo Tech.), Hiroshi Nohira (Tokyo City Univ.), Yudai Izumi, Takayuki Muro, Toyohiko Kinoshita (JASRI), Parhat Ahmet, Kuniyuki Kakushima, Takeo Hattori, Hiroshi Iwai (Tokyo Tech.) SDM2012-56 |
Depth profiles of impurity having different chemical bonding states were evaluated by using soft x-ray photoelectron spe... [more] |
SDM2012-56
pp.69-74 |
| SDM |
2012-06-21
16:35 |
Aichi |
VBL, Nagoya Univ. |
Interface controlled silicide Schottky S/D for future 3D devices
Yuta Tamura, Ryo Yoshihara, Kuniyuki Kakushima, Parhat Ahmet, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Kazuo Tsutsui, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Tech) SDM2012-59 |
This paper presents Ni/Si stacked-structure as interface control for silicidation. An atomically flat $NiSi_2$ film inte... [more] |
SDM2012-59
pp.87-92 |
| SDM |
2011-07-04
09:00 |
Aichi |
VBL, Nagoya Univ. |
High Temperature Annealing with MIPS Structure for Improving Interfacial Property at La-silicate/Si Interface and Achieving Scaled EOT
Takamasa Kawanago, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Tech.) SDM2011-50 |
This paper reports our experimental study for further EOT scaling with small interface state density based on controllin... [more] |
SDM2011-50
pp.1-5 |
| SDM |
2011-07-04
10:00 |
Aichi |
VBL, Nagoya Univ. |
Defect analysis of HfO2/In0.53Ga0.47As interface using capacitance-voltage and conductance methods
Darius Zade, Ryuji Hosoi, Ahmet Parhat, Kuniyuki Kakushima, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Inst. of Tech.) SDM2011-53 |
The changes in electrical characteristics of W/HfO2or La2O3/ In0.53Ga0.47As capacitors by wet chemical treatment before ... [more] |
SDM2011-53
pp.17-22 |
| SDM |
2010-06-22
10:45 |
Tokyo |
An401・402 Inst. Indus. Sci., The Univ. of Tokyo |
Nickel silicide Encroachment in Silicon Nanowire and its Suppression
Naoto Shigemori, Soshi Sato, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Inst. of Tech.) SDM2010-36 |
Ni silicide in the Si Nanowire shows a reaction different from the reaction with the bulk substrate from the influence o... [more] |
SDM2010-36
pp.17-22 |
| SDM |
2010-06-22
13:45 |
Tokyo |
An401・402 Inst. Indus. Sci., The Univ. of Tokyo |
High Temperature Rapid Thermal Annealing of Rare-Earth Oxides Dielectrics for Highly Scaled Gate Stack of EOT=0.5 nm
Daisuke Kitayama, Tomotsune Koyanagi, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Inst. of Tech.) SDM2010-41 |
A direct contact of high-k/Si substrate (without SiO<sub>2</sub> interfacial layer structure) is required for achieving ... [more] |
SDM2010-41
pp.43-48 |
| SDM |
2007-06-08
11:20 |
Hiroshima |
Hiroshima Univ. ( Faculty Club) |
Effects of Nitrogen Incorporaton into La2O3 using Nitrogen Radicals
Soshi Sato, Kiichi Tachi, Jaeyeol Song, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai (Tokyo Tech.) SDM2007-44 |
This work reports the influence of nitridation on structural and electrical properties of La2O3 gate dielectric films. T... [more] |
SDM2007-44
pp.71-74 |
|