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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
MW, ED |
2021-01-29 14:25 |
Online |
Online |
Improved power-added-efficiency in GaN-HEMT on freestanding GaN substrate with reduced interface contamination Yusuke Kumazaki, Toshihiro Ohki, Junji Kotani, Shiro Ozaki (Fujitsu/Fujitsu Labs.), Yoshitaka Niida (Fujitsu Labs.), Yuichi Minoura (Fujitsu/Fujitsu Labs.), Masato Nishimori (Fujitsu), Naoya Okamoto (Fujitsu/Fujitsu Labs.), Masaru Sato, Norikazu Nakamura (Fujitsu Labs.), Keiji Watanabe (Fujitsu/Fujitsu Labs.) ED2020-34 MW2020-87 |
[more] |
ED2020-34 MW2020-87 pp.34-37 |
MW, ED |
2019-01-17 15:00 |
Tokyo |
Hitachi, Central Research Lab. |
Pit-Assisted Ohmic Contact Technology for InAlGaN/GaN HEMTs Yusuke Kumazaki, Shiro Ozaki, Yuichi Minoura, Kozo Makiyama, Toshihiro Ooki, Naoya Okamoto, Norikazu Nakamura (FUJITSU LABORATORIES LTD.) ED2018-77 MW2018-144 |
Low contact resistance was realized in InAlGaN/GaN HEMTs by the introduction of pit structures on the metal/InAlGaN inte... [more] |
ED2018-77 MW2018-144 pp.51-54 |
MW, ED |
2017-01-26 14:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Lecture]
Current Status of Millimeter-Wave GaN-HEMTs Kozo Makiyama, Yoshitaka Niida, Shiro, Toshihiro Ohki, Naoya Okamoto, Yuichi Minoura, Masaru Sato, Youichi Kamata, Kazukiyo Jpshin, Keiji Watanabe (Fujitsu), Yasuyuki Miyamoto (Tokyo Tech.) ED2016-98 MW2016-174 |
[more] |
ED2016-98 MW2016-174 pp.13-16 |
ED |
2015-07-24 14:05 |
Ishikawa |
IT Business Plaza Musashi 5F |
Low Damage Dry Etching for Recessed Gate AlGaN/GaN-HEMTs Yuichi Minoura, Naoya Okamoto, Toshihiro Ohki, Shiro Ozaki, Kozo Makiyama, Yoichi Kamada, Keiji Watanabe (Fujitsu Labs.) ED2015-38 |
[more] |
ED2015-38 pp.9-13 |
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