IEICE Technical Committee Submission System
Conference Schedule
Online Proceedings
[Sign in]
Tech. Rep. Archives
    [Japanese] / [English] 
( Committee/Place/Topics  ) --Press->
 
( Paper Keywords:  /  Column:Title Auth. Affi. Abst. Keyword ) --Press->

All Technical Committee Conferences  (Searched in: All Years)

Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 13 of 13  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
MI 2017-01-18
15:24
Okinawa Tenbusu Naha
Rie Oyama, Chizuko Isyrygi, Hideyuki Senda, Yuri Sasaki, Gen Haba, Tomonobu Kanasugi, Akihiko Kikuchi, Toru Sugiyama (IMU), Sonia Pujol (HMS) MI2016-115
Introduction: Recently, there has been a growing interest among scientists in the mechanism of developmental the fetal b... [more] MI2016-115
pp.171-176
EID, ITE-IDY, IEE-EDD, SID-JC, IEIJ-SSL [detail] 2016-01-29
10:20
Toyama Toyama Univ. Sensing operation based on AlGaN nanorings
Hoshi Takeshima, Tetsuya Kouno, Sho Suzuki (Shizuoka Univ.), Masaru Sakai (Univ. of Yamanashi), Akihiko Kikuchi, Katsumi Kishino (Sophia Univ.), Kazuhiko Hara (Shizuoka Univ.) EID2015-36
 [more] EID2015-36
pp.89-91
OME 2012-05-24
14:30
Tokyo NTT Musashino Research and Development Center Nano Mist Deposition (NMD) technique for fabrication of polymer layer and OLED
Akihiko Kikuchi, Takayuki Irie (Sophia Univ.) OME2012-24
Thin film deposition characteristics of a Nano-Mist Deposition (NMD) technique; a kind of electrospray deposition techni... [more] OME2012-24
pp.25-29
LQE, ED, CPM 2011-11-18
15:05
Kyoto Katsura Hall,Kyoto Univ. Fabrication and characterization of near-infrared (1.46 um) GaN-based nanocolumn LEDs with In-rich InGaN active layer
Jumpei Kamimura, Katsumi Kishino, Kouichi Kamiyama, Akihiko Kikuchi (Sophia Univ.) ED2011-98 CPM2011-147 LQE2011-121
We demonstrated the longest wavelength operation of InGaN-based LEDs emitting at 1.46 um under DC current injection at t... [more] ED2011-98 CPM2011-147 LQE2011-121
pp.127-130
ED, LQE, CPM 2009-11-19
10:25
Tokushima Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) MBE growth of well-aligned InN crystals using Mo-mask selective area growth technique
Jumpei Kamimura, Katsumi Kishino, Akihiko Kikuchi (Sophia Univ./JST) ED2009-131 CPM2009-105 LQE2009-110
 [more] ED2009-131 CPM2009-105 LQE2009-110
pp.13-18
LQE, ED, CPM 2008-11-27
09:30
Aichi Nagoya Institute of Technology Fabrication of regularly arranged InGaN/GaN nanocolumns by Ti mask selective area growth throughout rf-plasma-assisted molecular-beam epitaxy
Hiroto Sekiguchi, Akihiko Kikuchi, Katsumi Kishino (Sophia Univ.) ED2008-152 CPM2008-101 LQE2008-96
GaN nanocolumns have high optical properties due to dislocation-free nature. We report the fabrication of regularly arra... [more] ED2008-152 CPM2008-101 LQE2008-96
pp.1-6
LQE, ED, CPM 2008-11-27
09:55
Aichi Nagoya Institute of Technology Random lasing in GaN nanocolumns
Masaru Sakai, Katsumi Kishino, Akihiko Kikuchi, Hiroto Sekiguchi, Yuta Inose, Kazuhiro Ema, Tomi Ohtsuki (Sophia Univ.) ED2008-153 CPM2008-102 LQE2008-97
Self-organized GaN nanocolumns are one-dimensional columnar nano-crystals, which have about 100 nm in diameter and 1 $\m... [more] ED2008-153 CPM2008-102 LQE2008-97
pp.7-12
CPM, ED, LQE 2007-10-11
13:30
Fukui Fukui Univ. Micro photoluminescence spectroscopy of single InGaN/GaN nanocolumn
Akio Kaneta (Kyoto Univ./JST), Akinobu Kanai (Kyoto Univ.), Mitsuru Funato, Yoichi Kawakami (Kyoto Univ./JST), Akihiko Kikuchi, Katsumi Kishino (Sophia Univ./JST) ED2007-157 CPM2007-83 LQE2007-58
The micro photoluminescence (PL) and micro time-resolved PL spectroscopy have been performed on a single InGaN/GaN nanoc... [more] ED2007-157 CPM2007-83 LQE2007-58
pp.7-12
CPM, ED, LQE 2007-10-11
13:55
Fukui Fukui Univ. Fabrication of GaN/AlGaN nanocolumn LEDs by rf-assisted molecular beam epitaxy
Hiroto Sekiguchi (Sophia Univ./JST), Kei Kato, Jo Tanaka (Sophia Univ.), Akihiko Kikuchi, Katsumi Kishino (Sophia Univ./JST) ED2007-158 CPM2007-84 LQE2007-59
GaN nanocolumns have excellent optical characteristics due to islocation-free nature. GaN/AlGaN nanocolumn LEDs grown on... [more] ED2007-158 CPM2007-84 LQE2007-59
pp.13-17
LQE, OPE 2007-06-29
14:00
Tokyo Kikai-Shinko-Kaikan Bldg. Intersubband transition in GaN/AlN multiple quantum disk nanocolumns
Kaiichi Tanaka, Keita Ikuno, Yohei Kasai, Kazuya Fukunaga (Sophia Univ.), Hideyuki Kunugita, Kazuhiro Ema, Akihiko Kikuchi, Katsumi Kishino (Sophia Univ/JST-CREST) OPE2007-22 LQE2007-23
The electronic relaxation process of intersubband transition (ISBT) in semiconductor quantum wells is extremely fast due... [more] OPE2007-22 LQE2007-23
pp.29-33
ED, CPM, LQE 2006-10-06
10:20
Kyoto   Fabrication of optical communication wavelength photodetector using GaN/AlN multiple quantum disk nanocolumn on Si(111) substrate
Hiroyuki Uchida, Akihiko Kikuchi, Katsumi Kishino (Sophia Univ.)
Intersubband transition (ISBT) in GaN/AlN multiple quantum structure is an attractive candidate for the mechanism of nex... [more] ED2006-163 CPM2006-100 LQE2006-67
pp.63-67
LQE, ED, CPM 2005-10-13
11:00
Shiga Ritsumeikan Univ. Growth and characterization of InN/InGaN multiple quantum wells by RF-MBE
Tatsuo Ohashi, Shunsuke Ishizawa, Petter Holmström, Akihiko Kikuchi, Katsumi Kishino (Sophia Univ.)
 [more] ED2005-122 CPM2005-109 LQE2005-49
pp.17-21
LQE, ED, CPM 2005-10-14
14:50
Shiga Ritsumeikan Univ. Growth and charctrization of InGaN nanocolumn LED by RF-MBE
Akihiko Kikuchi, Makoto Tada, Katsumi Kishino (Sophia Univ.)
 [more] ED2005-152 CPM2005-139 LQE2005-79
pp.61-65
 Results 1 - 13 of 13  /   
Choose a download format for default settings. [NEW !!]
Text format pLaTeX format CSV format BibTeX format
Copyright and reproduction : All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan