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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 17 of 17  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, LQE, CPM 2015-11-27
15:25		 Osaka Osaka City University Media Center Effects of annealing on the electrical characteristics of GaAs/GaAs junctions
Li Chai, Jianbo Liang, Naoteru Shigekawa (Osaka City Univ.) ED2015-89 CPM2015-124 LQE2015-121		  [more] ED2015-89 CPM2015-124 LQE2015-121
pp.105-110
ED, LQE, CPM 2015-11-27
15:50		 Osaka Osaka City University Media Center Electrical characteristics of Si/SiC junctions using surface activated bonding
Tomohiro Hayashi, Jianbo Liang (Osaka City Univ.), Manabu Arai (New Japan Radio Co.), Naoteru Shigekawa (Osaka City Univ.) ED2015-90 CPM2015-125 LQE2015-122		  [more] ED2015-90 CPM2015-125 LQE2015-122
pp.111-115
LQE, ED, CPM 2014-11-27
11:25		 Osaka   Critical thickness for phase separation in MOVPE-grown thick InGaN
Kazuki Kodama, Tanvir Md Hasan, Hiroyuki Nomura (Univ. of Fukui), Naoteru Shigekawa (Osaka City Univ.), Akio Yamamoto, Masaaki Kuzuhara (Univ. of Fukui) ED2014-75 CPM2014-132 LQE2014-103		 This paper reports phase separation in thick (~1 μm) MOVPE InxGa1-xN (x = 0.2~0.4) films grown by MOVPE at 570~750℃ on A... [more] ED2014-75 CPM2014-132 LQE2014-103
pp.9-14
LQE, ED, CPM 2014-11-28
15:10		 Osaka   Investigation on the maximization of short-circuit current in InGaN/GaN MQW solar cells
Noriyuki Watanabe, Manabu Mitsuhara, Haruki Yokoyama (NTT), Jianbo Liang, Naoteru Shigekawa (Osaka City Univ.) ED2014-94 CPM2014-151 LQE2014-122		 We have investigated InGaN/GaN multiple quantum well (MQW) solar cells in terms of the relationship between the short-ci... [more] ED2014-94 CPM2014-151 LQE2014-122
pp.103-106
CPM, LQE, ED 2013-11-28
13:30		 Osaka   Electrical properties of Si/SiC heterojunctions fabricated using surface-activated bonding
Shota Nishida, Jianbo Liang, Masashi Morimoto, Naoteru Shigekawa (Osaka City Univ.), Manabu Arai (New Japan Radio) ED2013-68 CPM2013-127 LQE2013-103		 The physical and electrical properties of p+-Si/n-4H-SiC heterojunctions with and without being annealed fabricated by u... [more] ED2013-68 CPM2013-127 LQE2013-103
pp.21-25
CPM, LQE, ED 2013-11-28
13:55		 Osaka   Fabrication of Tandem Solar Cells by Using Surface-Activated Bonding
Jianbo Liang (Osaka City Univ.), Shota Nishida, Masashi Morimoto, Naoteru Shigekawa (Osaka City University) ED2013-69 CPM2013-128 LQE2013-104		  [more] ED2013-69 CPM2013-128 LQE2013-104
pp.27-30
CPM, LQE, ED 2013-11-28
14:20		 Osaka   Investigation on the optimum MQW structure for InGaN/GaN solar cells
Noriyuki Watanabe, Manabu Mitsuhara, Haruki Yokoyama (NTT), Jianbo Liang, Naoteru Shigekawa (Osaka City Univ.) ED2013-70 CPM2013-129 LQE2013-105		 We have investigated InGaN/GaN MQW solar cells on the relationship between short circuit current and the MQW structure. ... [more] ED2013-70 CPM2013-129 LQE2013-105
pp.31-34
ED, LQE, CPM 2012-11-29
10:00		 Osaka Osaka City University Electrical Properties of Si-Based Heterojunctions by Surface-Activated Bonding
Jianbo Liang, Naoteru Shigekawa (Osaka City Univ.), Eiji Higurashi (Univ. Tokyo) ED2012-65 CPM2012-122 LQE2012-93		  [more] ED2012-65 CPM2012-122 LQE2012-93
pp.1-5
ED, LQE, CPM 2012-11-29
13:30		 Osaka Osaka City University Anoralous current-voltage behavior in n-i-n type diode with GaN/AlGaN/GaN junction
Noriyuki Watanabe, Haruki Yokoyama (NTT), Naoteru Shigekawa (Osaka City Univ.) ED2012-70 CPM2012-127 LQE2012-98		 We report an anomalous current-voltage behavior in an n-type GaN/undoped InGaN/undoped GaN/undoped AlGaN/n-type GaN diod... [more] ED2012-70 CPM2012-127 LQE2012-98
pp.21-24
CPM 2011-10-27
10:20		 Fukui Fukui Univ. MOVPE growth of InGaN on Si(111) substrates with an intermediate range of In content
Akihiro Mihara, Kenichi Sugita, Ashraful G. Bhuiyan, Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui), Noriyuki Watanabe, Naoteru Shigekawa (NTT Photonics Labs.) CPM2011-120		 This paper reports on the MOVPE growth of InxGa1-xN with x up to ~0.49 on AlN/Si(111) substrates. Single-crystalline Inx... [more] CPM2011-120
pp.55-58
OPE, EMT, LQE, PN, IEE-EMT [detail] 2011-01-28
10:50		 Osaka Osaka Univ. High-gain operation of avalanche photodiodes with InP/InGaAs new structures
Masahiro Nada, Yoshifumi Muramoto, Haruki Yokoyama, Naoteru Shigekawa, Satoshi Kodama (NTT) PN2010-44 OPE2010-157 LQE2010-142		 Due to higher voltage operation than that of conventional photodiodes (PDs), electrical field need to be confined inside... [more] PN2010-44 OPE2010-157 LQE2010-142
pp.103-106
OPE, LQE 2010-06-25
14:55		 Tokyo Kikai-Shinko-Kaikan Bldg. Composite Field MIC-PD for Low Bias and High Input Power Operation
Toshihide Yoshimatsu, Yoshifumi Muramoto, Satoshi Kodama, Naoteru Shigekawa, Haruki Yokoyama (NTT Corp.), Tadao Ishibashi (NTT Electronics Corp.) OPE2010-16 LQE2010-18		 Maximized Induced Current Photodiode (MIC-PD) has an optimized structure between a responsivity and a bandwidth by minim... [more] OPE2010-16 LQE2010-18
pp.7-10
ED, MW 2010-01-14
14:40		 Tokyo Kikai-Shinko-Kaikan Bldg Compressively Strained InAlN/AlGaN/GaN FETs with Regrown AlGaN Contact Layers
Masanobu Hiroki, Narihiko Maeda, Naoteru Shigekawa (NTT Corp.) ED2009-187 MW2009-170		  [more] ED2009-187 MW2009-170
pp.71-76
SDM, ED 2009-06-25
09:00		 Overseas Haeundae Grand Hotel, Busan, Korea [Invited Talk] InAlGaN/AlGaN/GaN Heterosturcures Field Effect Transistors with Flat Surface and High Electron Mobility
Masanobu Hiroki, Narihiko Maeda, Takashi Kobayashi, Naoteru Shigekawa (NTT PH Labs.) ED2009-71 SDM2009-66		 We report our recent development of an InAlN barrier layer for GaN-based FETs. We fabricated a novel structure consistin... [more] ED2009-71 SDM2009-66
pp.93-98
ED, MW 2006-01-19
14:45		 Tokyo Kikai-Shinko-Kaikan Bldg. 0.15-mm-dual-gate AlGaN/GaN HEMT mixers
Kenji Shiojima, Takashi Makimura, Toshihiko Kosugi, Tetsuya Suemitsu, Naoteru Shigekawa, Masanobu Hiroki, Haruki Yokoyama (NTT) 		 [more] ED2005-206 MW2005-160
pp.41-44
LQE, ED, CPM 2005-10-13
13:50		 Shiga Ritsumeikan Univ. Effect of epitaxial layer crystal quality on DC and RF characteristics of AlGaN/GaN short-gate HEMTs
Kenji Shiojima, Takashi Makimura, Tetsuya Suemitsu, Naoteru Shigekawa, Masanobu Hiroki, Haruki Yokoyama (NTT) 		 [more] ED2005-127 CPM2005-114 LQE2005-54
pp.43-46
LQE, ED, CPM 2005-10-13
17:00		 Shiga Ritsumeikan Univ. Surface acoustic wave devices fabricated on n+ GaN/undoped GaN layers
Naoteru Shigekawa, Kazumi Nishimura, Haruki Yokoyama (NTT), Kohji Hohkawa (Kanagawa Inst. Technol.) 		 [more] ED2005-136 CPM2005-123 LQE2005-63
pp.85-88
 Results 1 - 17 of 17  /   
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