Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED, THz |
2018-12-18 09:00 |
Miyagi |
RIEC, Tohoku Univ. |
[Invited Talk]
High-Speed Performance of InP-, Sb- and GaN-based HEMTs Akira Endoh, Issei Watanabe, Yoshimi Yamashita, Akifumi Kasamatsu (NICT), Hiroki Fujishiro (Tokyo Univ. of Science), Takashi Mimura (NICT) ED2018-62 |
We have fabricated nanometer-scale InP-, Sb- and GaN-based HEMTs by using electron beam lithography and measured their c... [more] |
ED2018-62 pp.35-38 |
AP |
2018-02-16 10:55 |
Tokyo |
Kozo Keikaku Engineering, Inc. |
[Invited Lecture]
Penetration Loss Measurement at 300 GHz Hirokazu Sawada, Kentaro Ishizu, Fumihide Kojima, Keizo Inagaki, Hiroyo Ogawa, Katsumi Fujii, Akifumi Kasamatsu, Iwao Hosako (NICT) AP2017-181 |
[more] |
AP2017-181 pp.31-35 |
ED, MW |
2018-01-25 15:45 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Delay Time Analysis of InAlN-MIS-HEMTs on Si Substrates Tomohiro Yoshida (SEI), Isao Makabe (NICT), Isao Makabe (SEI), Issei Watanabe, Akifumi Kasamatsu (NICT), Ken Nakata, Kazutaka Inoue (SEI) ED2017-94 MW2017-163 |
[more] |
ED2017-94 MW2017-163 pp.7-10 |
ED, THz |
2017-12-18 17:10 |
Miyagi |
RIEC, Tohoku Univ |
Preliminary study on terahertz waveguide-based modulation using photoinduced carriers Taito Shimanuki (Keio), Issei Watanabe, Akifumi Kasamatsu (NICT), Toshiyuki Tanaka, Yasuaki Monnai (Keio) ED2017-80 |
We study a method of modulating terahertz waves by changing a conductivity of a high-resistivity silicon crystal with ph... [more] |
ED2017-80 pp.29-32 |
ED, THz |
2017-12-19 09:00 |
Miyagi |
RIEC, Tohoku Univ |
[Invited Talk]
Development of Antimonide-Based Transistors Hiroki Fujishiro, Kyosuke Isono, Takuto Takahashi, Yoshiaki Harada, Naoki Oka, Jun Takeuchi, Yui Fujisawa (TUS), Sachie Fujikawa (Tokyo Denki Univ.), Ryuto Machida (TUS), Issei Watanabe, Yoshimi Yamashita, Akira Endoh, Shinsuke Hara, Akifumi Kasamatsu (NICT) ED2017-81 |
Quantum corrected Monte Carlo simulation shows that the InSb HEMT exhibits intrinsic fT more than 1 THz from Vds of arou... [more] |
ED2017-81 pp.33-36 |
ED, THz |
2017-12-19 09:40 |
Miyagi |
RIEC, Tohoku Univ |
Cryogenic DC and RF Characteristics of InGaAs/InAs/InGaAs Composite Channel HEMTs Akira Endoh, Issei Watanabe, Akifumi Kasamatsu (NICT), Takashi Mimura (NICT/Fujitsu Labs.) ED2017-82 |
We fabricated In0.7Ga0.3As/InAs/In0.7Ga0.3As and In0.7Ga0.3As channel HEMTs and measured their DC and RF characteristics... [more] |
ED2017-82 pp.37-40 |
ED |
2017-10-26 14:45 |
Miyagi |
|
Development Activity of Vacuum Electronics in THz Band Yoshihiro Kajikawa, Mitsuru Yoshida, Takatsugu Munehiro, Norio Masuda (NETS), Norihiko Sekine, Atsushi Kanno, Naokatsu Yamamoto, Akifumi Kasamatsu, Iwao Hosako (NICT) ED2017-39 |
At frequencies in “Terahertz Gap” band, power generating technology has been one of major R&D challenges. Recently, vacu... [more] |
ED2017-39 pp.13-16 |
ASN |
2017-05-26 09:30 |
Tokyo |
Tokyo Univ. (Institute of Industrial Science) |
Evaluation of Binary Sensing with Adaptive Thresholds in Spiking Wireless Sensor Networks Ferdinand Peper, Kenji Leibnitz, Tetsuya Shimokawa (NICT), Junnosuke Teramae (Osaka Univ.), Akifumi Kasamatsu, Shukichi Tanaka (NICT), Naoki Wakamiya (Osaka Univ.) ASN2017-5 |
[more] |
ASN2017-5 pp.23-26 |
RCS, SR, SRW (Joint) |
2017-03-03 11:15 |
Tokyo |
Tokyo Institute of Technology |
Propagation measurement at 300 GHz in server room environment Hirokazu Sawada, Fujii Katsumi, Akifumi Kasamatsu, Hiroyo Ogawa, Kentaro Ishizu, Fumihide Kojima (NICT) SRW2016-100 |
[more] |
SRW2016-100 pp.177-181 |
ED |
2016-12-19 14:40 |
Miyagi |
RIEC, Tohoku Univ |
Effect of Drain-Side Recess Length on DC and RF Characteristics of Cryogenic InP HEMTs Akira Endoh, Issei Watanabe, Akifumi Kasamatsu (NICT), Tsuyoshi Takahashi, Shoichi Shiba, Yasuhiro Nakasha, Taisuke Iwai (Fujitsu Labs.), Takashi Mimura (Fujitsu Labs./NICT) ED2016-81 |
We measured the DC and RF characteristics of InP-based 75-nm-gate In0.52Al0.48As/In0.63Ga0.37As HEMTs with various drain... [more] |
ED2016-81 pp.7-12 |
ED |
2016-12-20 13:15 |
Miyagi |
RIEC, Tohoku Univ |
[Invited Talk]
Input Power Optimization of a Tripler-Base 300-GHz CMOS Up-Conversion Mixer Ruibing Dong (NICT), Kosuke Katayama (Hiroshima Univ.), Shinsuke Hara (NICT), Kyoya Takano (Hiroshima Univ.), Issei Watanabe, Norihiko Sekine, Akifumi Kasamatsu (NICT), Takeshi Yoshida, Shuhei Amakawa, Minoru Fujishima (Hiroshima Univ.) ED2016-93 |
A tripler-based 300-GHz-band up-conversion mixer in 40-nm CMOS is experimentally characterized, whose operating frequenc... [more] |
ED2016-93 pp.71-74 |
MWP |
2016-11-14 11:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Study on optical signal generation for 1-THz-band multi-level signal transmission Atsushi Kanno, Norihiko Sekine, Akifumi Kasamatsu, Naokatsu Yamamoto (NICT) MWP2016-45 |
We have developed an ultra-broadband optical frequency comb generator based on an optical-filter-bank-equipped recircula... [more] |
MWP2016-45 pp.13-16 |
LQE, OPE, OCS |
2016-10-28 14:25 |
Miyazaki |
Miyazaki Citizen's Plaza |
Integrated Semiconductor Optical-to-Terahertz Signal Converter
-- Toward Seamless Connection between Optical and Terahertz Communication -- Satoshi Yamasaki, Akio Yasui, Tomohiro Amemiya (Titech), Kentaro Furusaswa, Shinsuke Hara, Issei Watanabe, Atsuchi Kanno, Norihiko Sekine (NICT), Zhichen Gu, Nobuhiko Nishiyama (Titech), Akifumi Kasamatsu (NICT), Shigehisa Arai (Titech) OCS2016-54 OPE2016-95 LQE2016-70 |
(Advance abstract in Japanese is available) [more] |
OCS2016-54 OPE2016-95 LQE2016-70 pp.109-114 |
ED |
2016-10-25 14:15 |
Mie |
|
Development Activity of Vacuum Electronics in THz Band Mitsuru Yoshida, Junichi Kobayashi, Yusuke Fujishita, Norio Masuda (NETS), Norihiko Sekine, Atsushi Kanno, Naokatsu Yamamoto, Akifumi Kasamatsu, Iwao Hosako (NICT) ED2016-45 |
There is a region called "Terahertz Gap" between the highest frequency of microwave technology and the lowest frequency ... [more] |
ED2016-45 pp.9-12 |
SR, SRW (Joint) |
2016-05-17 12:00 |
Overseas |
Hotel Lasaretti, Oulu, Finland |
[Invited Lecture]
A QAM-Capable 300-GHz CMOS Transmitter Shuhei Amakawa, Kosuke Katayama, Kyoya Takano (Hiroshima Univ.), Shinsuke Hara, Akifumi Kasamatsu (NICT), Koichi Mizuno, Kazuaki Takahashi (Panasonic), Takeshi Yoshida, Minoru Fujishima (Hiroshima Univ.) SR2016-12 |
A 300-GHz transmitter (TX) in 40-nm CMOS is presented. With the MOSFET unity-power-gain frequency $f_{mathrm{max}}$ bein... [more] |
SR2016-12 pp.39-46 |
MWP |
2016-04-21 14:15 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Terahertz Wave Generation in the 3 THz Range Using Mach-Zehnder-Modulator-Based Flat Comb Generator Isao Morohashi, Yoshihisa Irimajiri, Motohiro Kumagai, Akira Kawakami, Takahide Sakamoto, Norihiko Sekine, Akifumi Kasamatsu, Iwao Hosako (NICT) MWP2016-3 |
[more] |
MWP2016-3 pp.9-12 |
MWP |
2016-04-21 14:55 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
broadband multi-cycle frequency-chirped terahertz pulse generation from PPLN Junichi Hamazaki, Yoh Ogawa, Norihiko Sekine, Akifumi Kasamatsu, Atsushi Kanno, Naokatsu Yamamoto, Iwao Hosako (NICT) MWP2016-4 |
For light sources of broadband FM-CW radars in terahertz frequency region, structure-designed periodically poled lithium... [more] |
MWP2016-4 pp.13-17 |
LQE, EST, OPE, EMT, PN, MWP, IEE-EMT, PEM [detail] |
2016-01-28 12:55 |
Hyogo |
|
Performance Evaluation on Frequency Measurement of THz Waves Using MZM-Based Flat Comb Generator Mayu Kirigaya (Yokohama National Univ.), Isao Morohashi (NICT), Yuta Kaneko, Ikufumi Katayama (Yokohama National Univ.), Yoshihisa Irimajiri, Takahide Sakamoto, Norihiko Sekine, Akifumi Kasamatsu, Iwao Hosako (NICT) PN2015-40 EMT2015-91 OPE2015-153 LQE2015-140 EST2015-97 MWP2015-66 |
[more] |
PN2015-40 EMT2015-91 OPE2015-153 LQE2015-140 EST2015-97 MWP2015-66 pp.33-38 |
ED |
2015-12-21 13:05 |
Miyagi |
RIEC, Tohoku Univ |
[Invited Talk]
Compact 141-GHz Differential Amplifier with 20-dB Peak Gain and 22-GHz 3-dB Bandwidth Shinsuke Hara (NICT), Kousuke Katayama, Kyoya Takano (Hiroshima Univ.), Issei Watanabe, Norihiko Sekine, Akifumi Kasamatsu (NICT), Takeshi Yoshida, Shuhei Amakawa, Minoru Fujishima (Hiroshima Univ.) ED2015-91 |
This paper presents a wideband differential amplifier operating at 138 GHz in 40-nm CMOS. It is composed of five differe... [more] |
ED2015-91 pp.1-6 |
ED |
2015-12-21 13:45 |
Miyagi |
RIEC, Tohoku Univ |
Effect of Temperature on DC and RF Characteristics of Cryogenic InP HEMTs Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe, Akifumi Kasamatsu (NICT), Tsuyoshi Takahashi, Shoichi Shiba, Yasuhiro Nakasha, Taisuke Iwai (Fujitsu Labs.), Takashi Mimura (Fujitsu Labs./NICT) ED2015-92 |
We measured the DC and RF characteristics of InP-based 75-nm-gate In0.52Al0.48As/In0.63Ga0.37As HEMTs at 300, 220, 150, ... [more] |
ED2015-92 pp.7-11 |
|