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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, SDM | 2014-02-27 16:10 |
Hokkaido | Hokkaido Univ. Centennial Hall | Seebeck-coefficient control of ultrathin SOI layer and its novel characterization technique Hiroya Ikeda, Yuhei Suzuki, Kazutoshi Miwa (Shizuoka Univ.), Faiz Salleh (Shizuoka Univ./JSPS)  ED2013-137 SDM2013-152 |
The enhancement of the thermoelectric performance has been expected by Si nanostrucutres. The Si Seebeck coefficient is ... [more] | ED2013-137 SDM2013-152 pp.31-35 |
| SDM, ED, CPM | 2013-05-16 16:35 |
Shizuoka | Shizuoka Univ. (Hamamatsu) Graduate School of Sci. and Technol. | Focused ion beam Ga implantation into P-doped SOI layer and its Seebeck coefficient Yuhei Suzuki, Kazutoshi Miwa (Shizuoka Univ.), Faiz Salleh (Shizuoka Univ./ Research Fellow of JSPS), Masaru Shimomura, Akihiro Ishida, Hiroya Ikeda (Shizuoka Univ.) ED2013-22 CPM2013-7 SDM2013-29 |
With the aim of fabricating a thermopile infrared detector using Si nanowires, we have investigated the formation of a p... [more] | ED2013-22 CPM2013-7 SDM2013-29 pp.33-37 |
| SDM, ED | 2013-02-27 14:10 |
Hokkaido | Hokkaido Univ. | Variation of Seebeck coefficient of Si-on-insulator layer induced by bias-injected carriers Hiroya Ikeda, Yuhei Suzuki, Kazutoshi Miwa (Shizuoka Univ.), Faiz Salleh (Shizuoka Univ./Research Fellow of JSPS) ED2012-129 SDM2012-158 |
The enhancement of Seebeck coefficient by controlling the Si Fermi energy is one of key issues for enhancing the thermoe... [more] | ED2012-129 SDM2012-158 pp.7-11 |
| ED, SDM | 2012-02-08 11:00 |
Hokkaido | Seebeck Coefficient of Ultrathin Si with Fermi Energy Controlled by External Bias Faiz Salleh, Kazutoshi Miwa, Hiroya Ikeda (Shizuoka Univ.) ED2011-153 SDM2011-170 |
We varied the Seebeck coefficient of an n-type silicon-on-insulator (SOI) sample by applying an external bias in order t... [more] | ED2011-153 SDM2011-170 pp.65-69 |
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| SDM, ED | 2011-02-23 14:10 |
Hokkaido | Hokkaido Univ. | A novel refrigerator using a single-electron-pump operation fabricated from semiconductor materials Hiroya Ikeda, Faiz Salleh (Shizuoka Univ.) ED2010-193 SDM2010-228 |
We propose a novel single-electron-refrigerator which consists of a single-electron box and a single-electron pump. Its ... [more] | ED2010-193 SDM2010-228 pp.7-12 |
| SDM, ED | 2011-02-23 14:35 |
Hokkaido | Hokkaido Univ. | Theoretical Estimation of Seebeck Coefficient in P-Doped Si Ultrathin Si Films Faiz Salleh, Hiroya Ikeda (Shizuoka Univ.) ED2010-194 SDM2010-229 |
[more] | ED2010-194 SDM2010-229 pp.13-17 |
| SDM, CPM, ED | 2010-05-13 14:45 |
Shizuoka | Shizuoka University (Hamamatsu Campus) | Theoretical study on novel Si single-electron refrigerator Hiroya Ikeda, Faiz Salleh (Shizuoka Univ.) ED2010-20 CPM2010-10 SDM2010-20 |
We have proposed a novel single-electron-refrigerator (SER) device which can be fabricated in Si-on-insulator wafers and... [more] | ED2010-20 CPM2010-10 SDM2010-20 pp.17-21 |
| ED, SDM | 2010-02-22 13:25 |
Okinawa | Okinawaken-Seinen-Kaikan | Seebeck coefficient in heavily-doped SOI layers Hiroya Ikeda, Faiz Salleh (Shizuoka Univ.) ED2009-197 SDM2009-194 |
We have investigated the Seebeck coefficient of Si nanostructures, especially, ultrathin P-doped SOI (silicon-on-insulat... [more] | ED2009-197 SDM2009-194 pp.5-9 |
| SDM, ED | 2009-02-27 11:45 |
Hokkaido | Hokkaido Univ. | Thermoelectric characteristics of Si nanostructures for a high-efficiency thermoelectric device Hiroya Ikeda, Faiz Salleh, Kiyosumi Asai, Akihiro Ishida (Shizuoka Univ.) ED2008-238 SDM2008-230 |
In order to develop a high-efficiency thermoelectric device, we have investigated the thermoelectric characteristic... [more] | ED2008-238 SDM2008-230 pp.81-85 |
| ED, SDM | 2008-01-30 14:45 |
Hokkaido | Design of dopant-induced quantum dot arrays in silicon nanostructures for single-electron transfer Daniel Moraru, Daisuke Nagata, Kiyohito Yokoi, Hiroya Ikeda, Michiharu Tabe (Shizuoka Univ.) ED2007-240 SDM2007-251 |
Randomly distributed dopants in the channel of silicon-on-insulator (SOI) field-effect transistors (FETs) can introduce ... [more] | ED2007-240 SDM2007-251 pp.17-22 |
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| ED, SDM | 2008-01-31 09:00 |
Hokkaido | Development of high-efficiency thermoelectric devices using Si nanostructures Hiroya Ikeda, Naomi Yamashita (Shizuoka Univ.) ED2007-244 SDM2007-255 |
In order to obtain the thermoelectric characteristics enough for practical use, we make use of nanostructures in the the... [more] | ED2007-244 SDM2007-255 pp.39-42 |
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| SDM, ED | 2007-02-02 13:20 |
Hokkaido | Time-controlled single-electron transfer in single-gated asymmetric multiple tunnel junction arrays Daniel Moraru (Shizuoka Univ.), Yukinori Ono (ＮＴＴ), Hiroshi Inokawa, Kiyohito Yokoi, Ratno Nuryadi, Hiroya Ikeda, Michiharu Tabe (Shizuoka Univ.) |
[more] | ED2006-255 SDM2006-243 pp.83-88 |
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| ED, CPM, SDM | 2006-05-19 15:00 |
Aichi | VBL, Toyohashi University of Technology | Tunneling current oscillations in Si/SiO2/Si structures Daniel Moraru, Daisuke Nagata (Shizuoka Univ.), Seiji Horiguchi (Akita Univ.), Ratno Nuryadi, Hiroya Ikeda, Michiharu Tabe (Shizuoka Univ.) |
[more] | ED2006-40 CPM2006-27 SDM2006-40 pp.113-117 |
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