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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2021-11-12 10:30 |
Online | Online | [Invited Talk]
Full band Monte Carlo analysis of the uniaxial stress impact on 4H-SiC high energy transport Tomoya Nishimura, Katsumi Eikyu, Kenichiro Sonoda, Tamotsu Ogata (Renesas Electronics)  SDM2021-61 |
SiC is expected to be the next-generation semiconductor material especially for power devices, and some have been put in... [more] | SDM2021-61 pp.43-46 |
| SDM | 2017-11-09 13:05 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Simple and efficient approach to improve hot carrier immunity of a p-LDMOSFET Atsushi Sakai, Katsumi Eikyu (REL), Fujii Hiroki, Takahiro Mori (RSMC), Yutaka Akiyama, Yasuo Yamaguchi (REL) SDM2017-63 |
This paper proposes a simple and efficient method to improve hot carrier (HC) immunity of p-channel LDMOSFET without deg... [more] | SDM2017-63 pp.11-14 |
| SDM | 2015-11-06 14:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Impacts of the 4H-SiC/SiO2 Interface States on the Switching Operation of Power MOSFETs Atsushi Sakai, Katsumi Eikyu, Kenichiro Sonoda (REL), Kenichi Hisada, Koichi Arai, Yoichi Yamamoto (RSMC), Motoaki Tanizawa, Yasuo Yamaguchi (REL) SDM2015-91 |
[more] | SDM2015-91 pp.39-43 |
| SDM | 2009-12-04 13:00 |
Nara | NAIST | [Invited Talk]
Temperature dependence of threshold voltage of High-k/Metal Gate MOSFETs Yukio Nishida (Renesas/Hiroshima Univ.), Katsumi Eikyu, Akihiro Shimizu, Tomohiro Yamashita, Hidekazu Oda, Yasuo Inoue (Renesas), Kentaro Shibahara (Hiroshima Univ./Renesas) SDM2009-159 |
(Advance abstract in Japanese is available) [more] | SDM2009-159 pp.43-47 |
| SDM, VLD | 2007-10-30 15:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Impact of Shear Strain and Quantum Confinement on <110> Channel nMOSFET with High-Stress CESL Hiroyuki Takashino, Takeshi Okagaki, Tetsuya Uchida, Takashi Hayashi, Motoaki Tanizawa, Eiji Tsukuda, Katsumi Eikyu, Shoji Wakahara, Kiyoshi Ishikawa, Osamu Tsuchiya, Yasuo Inoue (Renesas Technology Corp.) VLD2007-57 SDM2007-201 |
Numerical study in conjunction with comprehensive bending experiments has demonstrated that \orientation{100}-Si has th... [more] |
VLD2007-57 SDM2007-201 pp.33-36 |
| SDM, VLD | 2007-10-30 15:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Validation of the Effect of Full Stress Tensor in HoleTransport in Strained 65nm-node pMOSFETs Eiji Tsukuda (Renesas), Yoshinari Kamakura (Osaka Univ.), Hiroyuki Takashino, Takeshi Okagaki, Tetsuya Uchida, Takashi Hayashi, Motoaki Tanizawa, Katsumi Eikyu, Shoji Wakahara, Kiyoshi Ishikawa, Osamu Tsuchiya, Yasuo Inoue (Renesas), Kenji Taniguchi (Osaka Univ.) VLD2007-59 SDM2007-203 |
We have developed a system consisting of a full-3D process simulator for stress calculation and k·pband calculation... [more] | VLD2007-59 SDM2007-203 pp.43-46 |
| SDM, VLD | 2006-09-26 10:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Global Identification of Variability Factors and Its Application to the Statistical Worst-Case Model Generation Katsumi Eikyu, Takeshi Okagaki, Motoaki Tanizawa, Kiyoshi Ishikawa, Osamu Tsuchiya (Renesas) |
A novel methodology is presented to generate the worst-case model including extraction of its compact model parameters. ... [more] | VLD2006-41 SDM2006-162 pp.13-18 |
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