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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD, SDM 2012-08-03
13:10
Hokkaido Sapporo Center for Gender Equality, Sapporo, Hokkaido A Fast-Transient-Response Digital Low-Dropout Regulator Comprising Thin-Oxide MOS Transistors in 40-nm CMOS process
Masafumi Onouchi, Kazuo Otsuga, Yasuto Igarashi, Toyohito Ikeya, Sadayuki Morita (Renesas Electronics), Koichiro Ishibashi (Univ. of Electro-Comm.), Kazumasa Yanagisawa (Renesas Electronics) SDM2012-82 ICD2012-50
A digital low-dropout (LDO) regulator comprising only thin-oxide MOS transistors was developed. The input voltage to the... [more] SDM2012-82 ICD2012-50
pp.105-110
ICD, SDM 2006-08-18
15:25
Hokkaido Hokkaido University Impact of Random Telegraph Signals on Scaling of Multilevel Flash Memories
Hideaki Kurata, Kazuo Otsuga, Akira Kotabe, Shinya Kajiyama, Taro Osabe, Yoshitaka Sasago (Hitachi), Shunichi Narumi, Kenji Tokami, Shiro Kamohara, Osamu Tsuchiya (Renesas)
This paper describes for the first time the observation of the threshold voltage (Vth) fluctuation due to random telegra... [more] SDM2006-153 ICD2006-107
pp.161-166
ICD, SDM 2005-08-19
14:15
Hokkaido HAKODATE KOKUSAI HOTEL Selective-Capacitance Constant-Charge-Injection Programming Scheme for High-Speed Multilevel AG-AND Flash Memories
Kazuo Otsuga, Hideaki Kurata (Hitachi, Ltd.), Kenji Kozakai, Satoshi Noda (Renesas), Yoshitaka Sasago, Tsuyoshi Arigane, Tetsufumi Kawamura, Takashi Kobayashi (Hitachi, Ltd.)
We developed a selective-capacitance constant-charge-injection programming scheme for multilevel AG-AND flash memories. ... [more] SDM2005-153 ICD2005-92
pp.61-66
ICD 2005-04-14
16:15
Fukuoka   4Gb Multilevel AG-AND Flash Memory with 10MB/s Programming Throughput
Hideaki Kurata, Yoshitaka Sasago, Kazuo Otsuga, Tsuyoshi Arigane, Tetsufumi Kawamura, Takashi Kobayashi, Hitoshi Kume (Hitachi), Kazuki Homma, Kenji Kozakai, Satoshi Noda, Teruhiko Ito, Masahiro Shimizu, Yoshihiro Ikeda, Osamu Tsuchiya, Kazunori Furusawa (RENESAS)
We fabricated a 4Gb multilevel AG-AND flash memory using 90nm CMOS technology. By using an inversion-layer local-bitline... [more] ICD2005-11
pp.53-58
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