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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED, MW |
2024-01-25 15:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. (Primary: On-site, Secondary: Online) |
Electron State Analysis under Al2O3 Gate Oxide film in EID AlGaN/GaN MOS-HEMT Takuma Nanjo, Akira Kiyoi, Takashi Imazawa, Masayuki Furuhashi, Kazuyasu Nishikawa (Mitsubishi Electric), Takashi Egawa (Nagoya Inst. of Tech) ED2023-68 MW2023-160 |
(To be available after the conference date) [more] |
ED2023-68 MW2023-160 pp.11-14 |
MW, ED |
2023-01-27 13:40 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. (Primary: On-site, Secondary: Online) |
Demonstration of high current and high voltage E-mode operation in EID AlGaN/GaN MOS-HEMT Takuma Nanjo, Tomohiro Shinagawa, Tatsuro Watahiki, Naruhisa Miura, Masayuki Furuhashi, Kazuyasu Nishikawa (Mitsubishi Electric), Takashi Egawa (NITech) ED2022-93 MW2022-152 |
(To be available after the conference date) [more] |
ED2022-93 MW2022-152 pp.36-39 |
SDM |
2022-11-11 14:00 |
Online |
Online |
[Invited Talk]
Evaluation and Modeling of Inversion Layer Mobility in Si-face 4H-SiC MOSFETs with Nitrided Gate Oxide Munetaka Noguchi, Hiroshi Watanabe (Mitsubishi Electric Corp.), Koji Kita (Tokyo Univ.), Kazuyasu Nishikawa (Mitsubishi Electric Corp.) SDM2022-75 |
In this study, the inversion layer mobility of the Si-face 4H-SiC MOSFET with nitrided gate oxide is examined under a wi... [more] |
SDM2022-75 pp.50-54 |
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