Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED, IEE-BMS, IEE-MSS |
2023-08-18 14:25 |
Tokyo |
(Primary: On-site, Secondary: Online) |
Evaluation of photoresponsive properties of metal/Nb:SrTiO3 junction
-- Towards the realization of optoelectronic synapse device -- Shin Sata, Yumeng Zheng, Kentaro Kinoshita (Tokyo Univ. of Sci.) ED2023-11 |
Sn-doped In_2O_3(ITO)/Nb:SrTiO_3(NSTO) junctions are expected to be a optoelectronic synapse with tunable characteristic... [more] |
ED2023-11 pp.6-9 |
SDM |
2023-02-07 15:35 |
Tokyo |
Tokyo Univ. (Primary: On-site, Secondary: Online) |
[Invited Talk]
Temperature Dependence of Information Processing Performance of Ionic Liquid Type Intelligent Connection Device Masakazu Kobayashi (NAGASE), Hisashi Shima, Yasuhisa Naitoh, Hiroyuki Akinaga (AIST), Dan Sato, Takuma Matsuo, Masaharu Yonezawa, Kentaro Kinoshita (TUS), Toshiyuki Itoh (Toyota Phys. & Chem. Res. Inst.), Toshiki Nokami (Tottori Univ), Yasumitsu Orii (NAGASE) SDM2022-91 |
The amount of the calculation cost of AI training increases exponentially, and this causes an increase in power consumpt... [more] |
SDM2022-91 pp.27-32 |
ED, IEE-BMS, IEE-MSS |
2022-08-18 14:55 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. B3-2 (Primary: On-site, Secondary: Online) |
Atmosphere dependence of learning accuracy in ionic liquid-based physical reservoir devices Masaharu Yonezawa (Tokyo Univ. of Sci./AIST), Hisashi Shima (AIST), Takuma Matsuo (Tokyo Univ. of Sci./AIST), Yasuhisa Naitoh, Hiroyuki Akinaga (AIST), Toshiyuki Itoh (Toyota Physical and Chemical Research Institute), Toshiki Nokami (Tottori Univ.), Masakazu Kobayashi (Tokyo Univ. of Sci./NAGASE & CO., LTD.), Kentaro Kinoshita (Tokyo Univ. of Sci.) ED2022-20 |
(To be available after the conference date) [more] |
ED2022-20 pp.13-16 |
ED, IEE-BMS, IEE-MSS |
2022-08-18 15:20 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. B3-2 (Primary: On-site, Secondary: Online) |
Neuromorphic computing using photo-induced current properties in ITO/Nb:SrTiO3 junction
-- For reservoir computing application -- Yutaro Yamazaki, Hiroyuki Kai, Kentaro Kinoshita (Tokyo Univ. of Sci.) ED2022-21 |
Recently, needs for edge computing have been increasing, and methods to reduce computational cost while maintaining high... [more] |
ED2022-21 pp.17-20 |
ED, IEE-BMS, IEE-MSS |
2022-08-18 15:45 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. B3-2 (Primary: On-site, Secondary: Online) |
Mechanism elucidation of resistance relaxation phenomena in Pt/Nb: SrTiO3 junctions
-- Toward the application of AI devices -- Hayato Nakamura, Hiromasa Aoki, Hiroyuki Kai, Kentaro Kinoshita (Tokyo Univ. of Sci.) ED2022-22 |
(To be available after the conference date) [more] |
ED2022-22 pp.21-24 |
SDM, EID |
2016-12-12 13:00 |
Nara |
NAIST |
[Invited Talk]
The tolerance of data retention characteristics to external stresses in metal oxide resistive random access memory Kentaro Kinoshita (Tottori Univ.) EID2016-17 SDM2016-98 |
[more] |
EID2016-17 SDM2016-98 pp.37-40 |
SDM, EID |
2016-12-12 13:30 |
Nara |
NAIST |
First-Principles Calculation Studies of Resistive Switching Mechanism in Polycrystalline Metal Oxide Film Takumi Moriyama, Sohta Hida (Tottori Univ.), Takahiro Yamasaki, Takahisa Ohno (NIMS), Satoru Kishida, Kentaro Kinoshita (Tottori Univ.) EID2016-18 SDM2016-99 |
For practical use of Resistive Random Access Memory (ReRAM), clarifying physical properties of conducting path created i... [more] |
EID2016-18 SDM2016-99 pp.41-44 |
SDM, EID |
2016-12-12 13:45 |
Nara |
NAIST |
Relationship between memory characteristics and Schottky parameters in Pt/Nb:STO junction Toshiki Shiomi, Yuuto Hagihara, Satoru Kishida, Kentaro Kinoshita (Tottori Univ.) |
[more] |
|
MBE, NC (Joint) |
2016-03-23 10:25 |
Tokyo |
Tamagawa University |
Modulation transfer function measurement of CT images reconstructed by a hard kernel Jo Mitsuzuka, Kazuhiro Sawa, Yoshinori Takehana, Akihiro Tanaka, Kentaro Kinoshita, Satoru Kishida (Tottori Univ.) NC2015-80 |
To develop MTF(Modulation Transfer Function) measurement of CT images reconstructed by a hard kernel filter, we proposed... [more] |
NC2015-80 pp.59-63 |
MBE, NC (Joint) |
2016-03-23 11:15 |
Tokyo |
Tamagawa University |
Measurement of mental Fatigue by using Flicker Values Takumi Fukunaga, Naoki Fujiwara, Ryota Inoue, Akihiro Tanaka, Kentaro Kinoshita, Satoru Kishida (Tottori Univ.) NC2015-101 |
We suggest measurement system for fatigue, which consists of four units, namely units of fatigue generation, data collec... [more] |
NC2015-101 pp.185-188 |
SDM, EID |
2014-12-12 17:15 |
Kyoto |
Kyoto University |
Study of driving forces that cause resistive switching of binary transition metal oxide memory Ryosuke Koishi, Takumi Moriyama, Kouhei Kimura, Kouki Kawano, Hidetoshi Miyashita, Sang-Seon Lee, Satoru Kishida, Kentaro Kinoshita (Tottori Univ.) EID2014-37 SDM2014-132 |
It is widely received that resistive switching of resistive random access memory (ReRAM) is caused by formation and rupt... [more] |
EID2014-37 SDM2014-132 pp.125-128 |
SDM, EID |
2014-12-12 17:45 |
Kyoto |
Kyoto University |
Study on Formative Mechanism of Conductive Path in Resistive Random Access Memory (ReRAM)
-- Analyses of Various NiO Surface States Using Ab Initio Calculations -- Takumi Moriyama (Tottori Univ.), Takahiro Yamasaki, Takahisa Ohno (NIMS), Satoru Kishida, Kentaro Kinoshita (Tottori Univ.) EID2014-39 SDM2014-134 |
For practical use of Resistive Random Access Memory (ReRAM), clarifying physical properties of conducting path created i... [more] |
EID2014-39 SDM2014-134 pp.135-138 |
SDM |
2013-12-13 14:10 |
Nara |
NAIST |
[Invited Talk]
Proposal of "Pore Engineering" as the Method for Controlling Resistive Switching Properties in Resistive Random Access Memory (ReRAM) Kentaro Kinoshita (Tottori Univ./TEDREC), Sho Hasegawa (Tottori Univ.) |
We found that both switching voltages and switching current of Cu/HfO2/Pt-structured conducting-bridge random access mem... [more] |
|
SDM |
2013-12-13 14:40 |
Nara |
NAIST |
The Effect of Solvent Substitution on Memory Characteristics of Cu/HfO2/Pt Conducting-Bridge Random Access Memory (CB-RAM) Sho Hasegawa, Yutaro Enomoto, Naonobu Katada, Toshiyuki Ito, Satoru Kishida, Kentaro Kinoshita (Tottori Univ.) SDM2013-129 |
A ‘pore engineering’, which is a method for controlling the memory performance of conducting-bridge random access memory... [more] |
SDM2013-129 pp.79-83 |
SDM |
2013-12-13 15:40 |
Nara |
NAIST |
Elucidation of Metal Diffusion Mechanism in Conducting-Bridge Random Access Memory (CB-RAM) Using Ab Initio Calculation Sho Yura (Tottori Univ.), Takahiro Yamasaki (NIMS), Kengo Nakada, Akira Ishii (Tottori Univ.), Satoru Kishida, Kentaro Kinoshita (Tottori Univ./TEDREC) |
[more] |
|
SDM |
2013-12-13 16:00 |
Nara |
NAIST |
Data Retention Characteristics of Resistive Random Access Memory Consisting of Transition Metal Oxide Masataka Yosihara, Ryosuke Ogata, Naohiro Murayama (Tottori Univ.), Satoru Kishida, Kentaro Kinoshita (Tottori Univ./TEDREC) |
[more] |
|
SDM |
2012-12-07 16:15 |
Kyoto |
Kyoto Univ. (Katsura) |
Correlation between parameters related to reset speed in HfO2 Conducting-Bridge memory Shigeyuki Tsuruta, Kentaro Kinoshita, Sho Hasegawa, Yutaro Enomoto, Satoru Kishida (Tottori Univ.) SDM2012-135 |
Improvement of memory performance of conducting-bridge random access memory (CB-RAM) is possible simply by replacing con... [more] |
SDM2012-135 pp.119-122 |
SDM |
2012-12-07 16:30 |
Kyoto |
Kyoto Univ. (Katsura) |
Memory characteristics of ReRAM filament confined in localized area. Sang-gyu Koh, Kentaro Kinoshita, Takahiro Fukuhara, Yusuke Sawai, Satoru Kishida (Tottori Univ.) SDM2012-136 |
Clarification of memory characteristics of tiny cell is important for practical use of resistive random access memory (R... [more] |
SDM2012-136 pp.123-127 |
ICD |
2011-04-19 15:00 |
Hyogo |
Kobe University Takigawa Memorial Hall |
Basic memory characteristics of HfO2-CB-RAM Shigeyuki Tsuruta (Tottori Univ.), Kentaro Kinoshita (Tottori Univ./ TEDREC), Tatsuya Nakabayashi (Tottori Univ.), Satoru Kishida (Tottori Univ./ TEDREC) ICD2011-17 |
CB-RAM (Conducting Bridge Random Access Memory) is expected as a candidate for a nonvolatile memory and a switch for the... [more] |
ICD2011-17 pp.93-97 |
ICD |
2011-04-19 15:25 |
Hyogo |
Kobe University Takigawa Memorial Hall |
Physical Analysis on ReRAM Filaments Using Atomic Force Microscope Takatoshi Yoda (Tottori Univ.), Kentaro Kinoshita, Satoru Kishida (Tottori University/TEDREC), Toshiya Ogiwara, Hideo Iwai, Sei Fukushima, Shigeo Tanuma (NIMS) ICD2011-18 |
[more] |
ICD2011-18 pp.99-104 |