| IEICE Technical Committee Submission System Conference Schedule |
Online Proceedings [Sign in] Tech. Rep. Archives |
All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2024-01-31 12:35 |
Tokyo | KIT Toranomon Graduate School (Primary: On-site, Secondary: Online) |
[Invited Talk]
Milli-Kelvin Analysis Revealing the Role of Band-edge States in Cryogenic MOSFETs Hiroshi Oka, Hidehiro Asai, Takumi Inaba, Shunsuke Shitakata, Hitoshi Yui, Hiroshi Fuketa, Shota Iizuka, Kimihiko Kato, Takashi Nakayama, Takahiro Mori (AIST)  SDM2023-74 |
Toward large-scale quantum computers, cryogenic CMOS circuits have been developed to control and readout the qubits insi... [more] | SDM2023-74 pp.1-4 |
| SCE | 2024-01-23 15:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Primary: On-site, Secondary: Online) |
[Invited Talk]
Development of semiconductor qubit simulator based on TCAD technology Hidehiro Asai, Shota Iizuka, Tohru Mogami, Junichi Hattori, Koichi Fukuda, Tsutomu Ikegami, Kimihiko Kato, Hiroshi Oka, Takahiro Mori (AIST) |
[more] | |
| SDM | 2023-11-09 15:55 |
Tokyo | (Primary: On-site, Secondary: Online) |
[Invited Talk]
Development of Quantum Device Simulator toward Large-Scale Integration of Silicon Qubits Hidehiro Asai, Shota Iizuka, Tohru Mogami, Junichi Hattori, Koichi Fukuda, Tsutomu Ikegami, Kimihiko Kato, Hiroshi Oka, Takahiro Mori (AIST) SDM2023-67 |
[more] | SDM2023-67 pp.20-25 |
| SDM | 2023-11-10 13:10 |
Tokyo | (Primary: On-site, Secondary: Online) |
[Invited Talk]
Noies Source of MOSFETs Operating at Cryogenic Temperature Takumi Inaba, Hiroshi Oka, Hidehiro Asai, Hiroshi Fuketa, Shota Iizuka, Kimihiko Kato, Shunsuke Shitakata, Koichi Fukuda, Takahiro Mori (AIST) SDM2023-70 |
There is increasing demand for the development of classic integrated circuits to control qubits for quantum computers. F... [more] | SDM2023-70 p.35 |
| SDM, ICD, ITE-IST [detail] | 2023-08-01 15:25 |
Hokkaido | Hokkaido Univ. Multimedia Education Bldg. 3F (Primary: On-site, Secondary: Online) |
[Invited Talk]
Low-Frequency Noise Source in the Cryogenic Operation of Short-Channel Bulk MOSFET Takumi Inaba, Hiroshi Oka, Hidehiro Asai, Hiroshi Fuketa, Shota Iizuka, Kimihiko Kato, Shunsuke Shitakata, Koichi Fukuda, Takahiro Mori (AIST) SDM2023-40 ICD2023-19 |
The assignment of low-frequency noise sources in the cryogenic operation of MOSFET is of great importance because of the... [more] | SDM2023-40 ICD2023-19 pp.22-27 |
| SDM, ICD, ITE-IST [detail] | 2023-08-01 16:10 |
Hokkaido | Hokkaido Univ. Multimedia Education Bldg. 3F (Primary: On-site, Secondary: Online) |
Additional High-Pressure Hydrogen Annealing Improves the Cryogenic Operation of Si (110)-oriented n-MOSFETs Shunsuke Shitakata (Keio Univ./AIST), Hiroshi Oka, Takumi Inaba, Shota Iizuka, Kimihiko Kato, Takahiro Mori (AIST) SDM2023-41 ICD2023-20 |
Cryo-CMOS technology is highly demanded to realize control circuits of large-scale quantum computers, which control and ... [more] | SDM2023-41 ICD2023-20 pp.28-31 |
| SDM | 2023-06-26 10:50 |
Hiroshima | Hiroshima Univ. (Res. Inst. of Nanodevices) | [Memorial Lecture]
Effect of Conduction Band Edge States on Coulomb-Limiting Electron Mobility in Cryogenic-MOSFET Operation Hiroshi Oka, Takumi Inaba, Shota Iizuka, Hidehiro Asai, Kimihiko Kato, Takahiro Mori (AIST) SDM2023-28 |
Cryogenic-CMOS technology has attracted significant attention for control/read-out qubits for realizing a large-scale-in... [more] | SDM2023-28 pp.5-6 |
| SDM | 2022-11-11 13:00 |
Online | Online | [Invited Talk]
Understanding of Electron Mobility Limiting Factor in Cryo-CMOS Hiroshi Oka, Takumi Inaba, Shota Iizuka, Hidehiro Asai, Kimihiko Kato, Takahiro Mori (AIST) SDM2022-74 |
To realize highly-integrated quantum computers, the Cryo-CMOS circuit has attracted significant attention for control/re... [more] | SDM2022-74 p.49 |
| ICD, SDM, ITE-IST [detail] | 2022-08-09 11:05 |
Online | [Invited Talk]
Effect of Conduction Band Edge States on Coulomb-Limiting Electron Mobility in Cryogenic MOSFET Operation Hiroshi Oka, Takumi Inaba, Shota Iizuka, Hidehiro Asai, Kimihiko Kato, Takahiro Mori (AIST) SDM2022-46 ICD2022-14 |
Cryogenic-CMOS technology has attracted significant attention for control/read-out qubits for realizing a large-scale qu... [more] | SDM2022-46 ICD2022-14 pp.54-59 |
|
| SDM, ICD, ITE-IST [detail] | 2021-08-17 10:15 |
Online | Online | [Invited Talk]
Buried nanomagnet realizing high-speed/low-variability silicon spin qubits: implementable in error-correctable large-scale quantum computers Shota Iizuka, Kimihiko Kato, Atsushi Yagishita, Hidehiro Asai, Tetsuya Ueda, Hiroshi Oka, Junichi Hattori, Tsutomu Ikegami, Koichi Fukuda, Takahiro Mori (AIST) SDM2021-30 ICD2021-1 |
We propose a buried nanomagnet (BNM) realizing high-speed/low-variability silicon spin qubit operation, inspired by buri... [more] | SDM2021-30 ICD2021-1 pp.1-6 |
| ICD, SDM, ITE-IST [detail] | 2020-08-07 09:30 |
Online | Online | [Invited Talk]
Understanding the Origin of Low-frequency Noise in Cryo-CMOS Toward Long-coherence-time Si Spin Qubit Hiroshi Oka, Takashi Matsukawa, Kimihiko Kato, Shota Iizuka, Wataru Mizubayashi, Kazuhiko Endo, Tetsuji Yasuda, Takahiro Mori (AIST) SDM2020-6 ICD2020-6 |
Si quantum computer has attracted a significant attention due to its potential for large-scale integration using semicon... [more] | SDM2020-6 ICD2020-6 pp.25-30 |
| SDM, ICD, ITE-IST [detail] | 2019-08-09 10:15 |
Hokkaido | Hokkaido Univ., Graduate School /Faculty of Information Science and | Fabrication and electrical characteristics of amorphous-ZnSnO/Si bilayer tunnel FETs Kimihiko Kato (Univ. of Tokyo/AIST), Hiroaki Matsui, Hitoshi Tabata, Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo) SDM2019-46 ICD2019-11 |
We have examined impact of an amorphous ZnSnO channel layer with high thickness uniformity on electrical characteristics... [more] | SDM2019-46 ICD2019-11 pp.63-66 |
| SDM | 2018-11-08 11:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Proposal and device design of tunneling field effect transistor with oxide semiconductor and group-IV semiconductor Kimihiko Kato, Hiroaki Matsui, Hitoshi Tabata, Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo) SDM2018-66 |
A novel bilayer tunneling field effect transistor (TFET) employing an attractive material combination of oxide-semicondu... [more] | SDM2018-66 pp.11-16 |
| SDM | 2018-01-30 11:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Proposal and demonstration of oxide-semiconductor/(Si, SiGe, Ge) bilayer tunneling field effect transistor with type-II energy band alignment Kimihiko Kato, Hiroaki Matsui, Hitoshi Tabata, Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo) SDM2017-92 |
A novel bilayer tunneling field effect transistor (TFET) employing an attractive material combination of oxide-semicondu... [more] | SDM2017-92 pp.5-8 |
| SDM | 2014-06-19 10:10 |
Aichi | VBL, Nagoya Univ. | Alleviation of Fermi level pinning of Sn/Ge contact Akihiro Suzuki, Shunsuke Asaba, Jun Yokoi, Masashi Kurosawa, Kimihiko Kato, Mitsuo Sakashita, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2014-45 |
[more] | SDM2014-45 pp.11-16 |
| SDM | 2013-06-18 09:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Control of Pr-Oxide Crystalline Phase by Regulating Oxidant Partial Pressure and Si Diffusion Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2013-44 |
For realization of hexagonal Pr2O3 thin film as higher-k gate dielectrics, we have investigated the effect of H2O partia... [more] | SDM2013-44 pp.1-6 |
| SDM | 2013-06-18 09:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Formation of Ultra Thin GeO2 Film Using Tetraethoxy-Germanium Teppei Yoshida, Kimihiko Kato, Shigehisa Shibayama, Mitsuo Sakashita, Noriyuki Taoka, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2013-45 |
For realizing three-dimensional Ge channel MOSFET, fabrication of good interface property of high-k/Ge structure, and un... [more] | SDM2013-45 pp.7-11 |
| SDM | 2013-06-18 09:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Clarification of oxidation mechanisms in Al2O3/Ge structure and impact of interface reactions on interface properties Shigehisa Shibayama, Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2013-46 |
Currently, it is reported that the Ge surface oxidation through the thin Al2O3 layer using oxygen plasma (post plasma ox... [more] | SDM2013-46 pp.13-18 |
| SDM, ED (Workshop) |
2012-06-28 10:00 |
Okinawa | Okinawa Seinen-kaikan | Effects of Light and Air Exposures on Electrical Properties of GeO2/Ge and Al2O3/Ge Gate Stack Structures Kusumandari, Wakana Takeuchi, Kimihiko Kato, Shigehisa Shibayama, Mitsuo Sakashita, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) |
Low temperature processes such as plasma process are required for realizing Ge metal-oxide-semiconductor field effect tr... [more] | |
| SDM | 2012-06-21 10:55 |
Aichi | VBL, Nagoya Univ. | Clarification of Interfacial Reaction Mechanism in O2 Annealing or O radical Process for Al2O3/Ge Structure Shigehisa Shibayama, Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2012-48 |
To realize a high performance Ge MOSFET, it is quite important to achieve simultaneously the low interface state density... [more] | SDM2012-48 pp.27-32 |
[Return to Top Page]