| Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
| SDM |
2021-11-11
16:15 |
Online |
Online |
A threshold voltage definition based on a standardized charge vs. voltage relationship
Kiyoshi Takeuchi, Tomoko Mizutani, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto (Univ. Tokyo)  SDM2021-58 |
Threshold voltage defined by a band bending of twice the substrate intrinsic-to-Fermi level difference has been widely a... [more] |
SDM2021-58
pp.29-32 |
| SDM |
2020-11-20
11:30 |
Online |
Online |
[Invited Talk]
Three-dimensional device simulation of Si IGBTs
-- Investigation of physical models and comparisons with measurements --
Naoyuki Shigyo, Masahiro Watanabe, Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa (Tokyo Tech), Akira Nakajima (AIST), Katsumi Satoh (Mitsubishi Electric), Tomoko Matsudai (Toshiba), Takuya Saraya, Toshihiko Takakura, Kazuo Itou, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi (The Univ. of Tokyo), Hitoshi Wakabayashi, Iriya Muneta (Tokyo Tech), Shin-ichi Nishizawa (Kyushu Univ.), Kazuo Tsutsui (Tokyo Tech), Toshiro Hiramoto (The Univ. of Tokyo), Hiromichi Ohashi, Hiroshi Iwai (Tokyo Tech) SDM2020-30 |
[more] |
SDM2020-30
pp.36-40 |
| SDM |
2019-11-08
13:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Three-dimensional accurate TCAD simulation of trench-gate Si-IGBTs
Masahiro Watanabe, Naoyuki Shigyo, Takuya Hoshii, Kazuyoshi Furukawa, Kuniyuki Kakushima (Tokyo Tech.), Katsumi Satoh (Mitsubishi Electric Corp.), Tomoko Matsudai (Toshiba Electronic Devices & Storage Corp.), Takuya Saraya, Toshihiko Takakura, Kazuo Itou, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi (The University of Tokyo), Iriya Muneta, Hitoshi Wakabayashi (Tokyo Tech.), Akira Nakajima (AIST), Shin-ichi Nishizawa (Kyushu University, Kasuga), Kazuo Tsutsui (Tokyo Tech.), Toshiro Hiramoto (The University of Tokyo), Hiromichi Ohashi, Hiroshi Iwai (Tokyo Tech.) SDM2019-77 |
In this work, excellent agreement between 3D TCAD simulations and experimental current-voltage characteristics were obta... [more] |
SDM2019-77
pp.45-48 |
| SDM, ICD, ITE-IST [detail] |
2019-08-08
10:00 |
Hokkaido |
Hokkaido Univ., Graduate School /Faculty of Information Science and |
Application of Extreme Value Theory to Statistical Analyses of Worst Case SRAM Data Retention Voltage
Tomoko Mizutani, Kiyoshi Takeuchi, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto (Univ. of Tokyo) SDM2019-41 ICD2019-6 |
The extreme value theory was applied to the estimation of the maximum SRAM data retention voltage (DRV). It was found th... [more] |
SDM2019-41 ICD2019-6
pp.27-30 |
| SDM, ICD, ITE-IST [detail] |
2019-08-08
10:25 |
Hokkaido |
Hokkaido Univ., Graduate School /Faculty of Information Science and |
[Invited Lecture]
3300V Scaled IGBT Switched by 5V Gate Drive
Toshiro Hiramoto, Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi (Univ. of Tokyo), Masanori Tsukuda (Green Electronics Research Inst.), Yohichiroh Numasawa (Meiji Univ,), Katsumi Satoh (Mitsubishi Electric Corp), Tomoko Matsudai (Toshiba Electronic Devices & Storage Corp.), Wataru Saito (Kyushu Univ.), Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Naoyuki Shigyo, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai (Tokyo Inst. of Technology), Atsushi Ogura (Meiji Univ.), Shin-ichi Nishizawa (Kyushu Univ.), Ichiro Omura (Kyushu Inst. of Tech.), Hiromichi Ohashi (Tokyo Inst. of Tech.) SDM2019-42 ICD2019-7 |
[more] |
SDM2019-42 ICD2019-7
pp.31-34 |
| SDM |
2019-01-29
15:40 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss
Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi (Univ. of Tokyo), Masanori Tsukuda (GRIK), Yohichiroh Numasawa (Meiji Univ.), Katsumi Satoh (Mitsubishi Electric), Tomoko Matsudai, Wataru Saito (Toshiba Electronic Devices & Storage), Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Naoyuki Shigyo, Kazuo Tsutsui, Hiroshi Iwai (Tokyo Tech), Atsushi Ogura (Meiji Univ.), Shin-ichi Nishizawa (Kyushu Univ.), Ichiro Omura (Kyushu Inst. of Tech.), Hiromichi Ohashi (Tokyo Tech), Toshiro Hiramoto (Univ. of Tokyo) SDM2018-90 |
Functional trench-gated 1200V-10A class Si-IGBTs, designed based on the scaling concept, were fabricated, and 5V gate vo... [more] |
SDM2018-90
pp.39-44 |
| SDM, ICD, ITE-IST [detail] |
2018-08-08
09:45 |
Hokkaido |
Hokkaido Univ., Graduate School of IST M Bldg., M151 |
Understanding Temperature Effect on Subthreshold Slope Variability in Bulk and SOTB MOSFETs
Shuang Gao, Tomoko Mizutani, Kiyoshi Takeuchi, Masaharu Kobayashi, Toshiro Hiramoto (Univ. Tokyo) SDM2018-37 ICD2018-24 |
We present a new finding that subthreshold slope (SS) variability is reduced at high temperature in both bulk and silico... [more] |
SDM2018-37 ICD2018-24
pp.65-70 |
| SDM, ICD, ITE-IST [detail] |
2018-08-09
13:45 |
Hokkaido |
Hokkaido Univ., Graduate School of IST M Bldg., M151 |
Effect of multiple stress application in post-fabrication cell stability self-improvement in SRAM cell array
Tomoko Mizutani, Kiyoshi Takeuchi, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto (Univ. of Tokyo) SDM2018-49 ICD2018-36 |
A new version applying multiple stress of the post fabrication SRAM self-improvement technique, which improves SRAM cell... [more] |
SDM2018-49 ICD2018-36
pp.121-126 |
| SDM, ICD, ITE-IST [detail] |
2017-08-01
09:45 |
Hokkaido |
Hokkaido-Univ. Multimedia Education Bldg. |
Parallel Programming of Non-volatile Power-up States of SRAM
Tomoko Mizutani, Kiyoshi Takeuchi, Takuya Saraya (Univ. of Tokyo), Hirofumi Shinohara (Waseda Univ.), Masaharu Kobayashi, Toshiro Hiramoto (Univ. of Tokyo) SDM2017-38 ICD2017-26 |
A technique for using an ordinary SRAM array for programmable and readable non-volatile (NV) memory is proposed. Paralle... [more] |
SDM2017-38 ICD2017-26
pp.49-54 |
| ICD, SDM, ITE-IST [detail] |
2016-08-03
15:05 |
Osaka |
Central Electric Club |
Increased Drain-Induced Variability and Within-Device Variability in Extremely Narrow Silicon Nanowire MOSFETs with Width down to 2nm
Tomoko Mizutani, Kiyoshi Takeuchi, Ryota Suzuki, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto (Univ. of Tokyo) SDM2016-67 ICD2016-35 |
The effects of drain voltage in threshold voltage variability in extremely narrow silicon nanowire (NW) channel FETs are... [more] |
SDM2016-67 ICD2016-35
pp.123-126 |
| SDM, ICD |
2011-08-26
09:00 |
Toyama |
Toyama kenminkaikan |
Evaluation of Variability in High-k/Metal-Gate MOSFET using Takeuchi Plot
Tomoko Mizutani, Anil Kumar (Univ. of Tokyo), Akio Nishida, Kiyoshi Takeuchi, Satoshi Inaba, Shiro Kamohara (MIRAI-Selete), Kazuo Terada (Hiroshima City Univ.), Tohru Mogami (MIRAI-Selete), Toshiro Hiramoto (Univ. of Tokyo/MIRAI-Selete) SDM2011-83 ICD2011-51 |
[more] |
SDM2011-83 ICD2011-51
pp.65-68 |
| SDM, ICD |
2011-08-26
09:25 |
Toyama |
Toyama kenminkaikan |
Statistical Analysis of DIBL and Current-Onset Voltage (COV) Variability in Scaled MOSFETs
Anil Kumar, Tomoko Mizutani (Univ. of Tokyo), Akio Nishida, Kiyoshi Takeuchi, Satoshi Inaba, Shiro Kamohara (MIRAI-Selete), Kazuo Terada (Hiroshima City Univ.), Tohru Mogami (MIRAI-Selete), Toshiro Hiramoto (Univ. of Tokyo/MIRAI-Selete) SDM2011-84 ICD2011-52 |
[more] |
SDM2011-84 ICD2011-52
pp.69-73 |
| ICD |
2011-04-19
10:20 |
Hyogo |
Kobe University Takigawa Memorial Hall |
Multi-step Word-line Control Technology in Hierarchical Cell Architecture for Scaled-down High-density SRAMs
Koichi Takeda, Toshio Saito, Shinobu Asayama, Yoshiharu Aimoto, Hiroyuki Kobatake, Shinya Ito, Toshifumi Takahashi, Kiyoshi Takeuchi, Masahiro Nomura, Yoshihiro Hayashi (Renesas Electronics) ICD2011-10 |
[more] |
ICD2011-10
pp.55-58 |
| ICD |
2010-12-17
13:00 |
Tokyo |
RCAST, Univ. of Tokyo |
[Invited Talk]
Variability in Scaled MOS Devices
Kiyoshi Takeuchi (Renesas) ICD2010-121 |
[more] |
ICD2010-121
pp.131-133 |
| ICD, SDM |
2010-08-27
13:20 |
Hokkaido |
Sapporo Center for Gender Equality |
Direct Measurement and Analysis of Static Noise Margin in SRAM Cells Using DMA TEG
Toshiro Hiramoto, Makoto Suzuki, Takuya Saraya, Ken Shimizu (Univ. of Tokyo), Akio Nishida, Shiro Kamohara, Kiyoshi Takeuchi, Tohru Mogami (MIRAI-Selete) SDM2010-144 ICD2010-59 |
[more] |
SDM2010-144 ICD2010-59
pp.111-114 |
| ICD, SDM |
2010-08-27
16:00 |
Hokkaido |
Sapporo Center for Gender Equality |
Random Drain Current Variation Caused by "Current-Onset Voltage" Variability in Scaled MOSFETs
Tomoko Mizutani (Univ. of Tokyo), Takaaki Tsunomura (MIRAI-Selete), Anil Kumar (Univ. of Tokyo), Akio Nishida, Kiyoshi Takeuchi, Satoshi Inaba, Shiro Kamohara (MIRAI-Selete), Kazuo Terada (Hiroshima City Univ.), Tohru Mogami (MIRAI-Selete), Toshiro Hiramoto (Univ. of Tokyo/MIRAI-Selete) SDM2010-150 ICD2010-65 |
It is revealed that drain current variability is fluctuated by “current-onset voltage” as well as threshold voltage VTH ... [more] |
SDM2010-150 ICD2010-65
pp.143-148 |
| SDM |
2009-11-13
10:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Carrier Transport Analysis of Strained SiGe/Si-pMOSFETs using Full-band Device Simulation
Hiroshi Takeda (NEC Electronics Corp.), Michihito Kawada (NEC Informatec Systems), Kiyoshi Takeuchi, Masami Hane (NEC Electronics Corp.) SDM2009-144 |
Transport characteristics of strained-SiGe on Si channel pMOSFETs is analyzed in detail by full-band device simulation. ... [more] |
SDM2009-144
pp.49-53 |
| SDM |
2009-11-13
13:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Random Fluctuations in Scaled MOS Devices
Kiyoshi Takeuchi (MIRAI-Selete/NEC Corp.), Akio Nishida (MIRAI-Selete), Toshiro Hiramoto (MIRAI-Selete/Univ. of Tokyo.) SDM2009-147 |
[more] |
SDM2009-147
pp.67-71 |
| ICD, SDM |
2008-07-17
14:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Special Talk]
Present Status and Future Trend of Characteristic Variations in Scaled CMOS
Toshiro Hiramoto (Univ. of Tokyo/MIRAI-Selete), Kiyoshi Takeuchi, Takaaki Tsunomura (/MIRAI-Selete), Arifin T.Putra (Univ. of Tokyo), Akio Nishida, Shiro Kamohara (/MIRAI-Selete) SDM2008-135 ICD2008-45 |
The variability is one of the most critical issues for further miniaturization of MOS transistors. Although the variabi... [more] |
SDM2008-135 ICD2008-45
pp.41-46 |
|