Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED, IEE-BMS, IEE-MSS |
2022-08-18 13:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. B3-2 (Primary: On-site, Secondary: Online) |
Frequency Delta-Sigma Modulation Position Sensors using a Cavity Resonator and Their Possible Applications Koichi Maezawa, Masayuki Mori (Univ. Toyama) ED2022-18 |
A frequency delta-sigma modulation is an interesting variant of the delta-sigma modulation based on a voltage-controlled... [more] |
ED2022-18 pp.5-8 |
ED |
2019-08-06 15:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Effects of the Phase Noise of the oscillators on the Frequency Delta Sigma Modulation Sensors Koichi Maezawa, Masayuki Mori (Univ. Toyama) ED2019-29 |
[more] |
ED2019-29 pp.13-16 |
ED |
2018-08-08 17:20 |
Overseas |
Kikai-Shinko-Kaikan Bldg. |
A 10GS/s measurement system using an FPGA for frequency delta-sigma modulation sensors Koichi Maezawa, Takahiro Yamaoka, Masayuki Mori (Univ. Toyama) ED2018-25 |
The frequency delta sigma modulation (FDSM) technique is one of the most promising technique for high performance digita... [more] |
ED2018-25 pp.31-34 |
ED, CPM, SDM |
2018-05-24 14:45 |
Aichi |
Toyohashi Univ. of Tech. (VBL) |
Growth of high quality InSb channel layer with InxGa1-xSb heteroepitaxial films on Si(111) A. A. Mohammad Monzur-Ul-Akhir, Masayuki Mori, Koichi Maezawa (University of Toyama) ED2018-17 CPM2018-4 SDM2018-12 |
InSb has met the requirements of high-performance channel material with faster response towards ultra-fast and very low ... [more] |
ED2018-17 CPM2018-4 SDM2018-12 pp.15-18 |
ED, THz |
2017-12-18 15:15 |
Miyagi |
RIEC, Tohoku Univ |
[Invited Talk]
Improved stability of resonant tunneling diode oscillators and their application to sensors Koichi Maezawa (Univ. Toyama) ED2017-76 |
RTD oscillators are one of the most promising candidates for THz signal sources. However, RTD oscillators have stability... [more] |
ED2017-76 pp.15-18 |
ED |
2017-08-09 16:55 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
A novel phase shifter for THz applications Koichi Maezawa, Daisuke Nakano, Masayuki Mori (Univ. of Toyama), Hiromu Ishii (Toyohashi Univ. of Tech.), Hiroya Andoh (NIT, Toyota College) ED2017-31 |
[more] |
ED2017-31 pp.25-28 |
SDM, ED, CPM |
2017-05-26 09:30 |
Aichi |
VBL, Nagoya University |
Heteroepitaxial Growth of InGaSb Thin Films on GaSb/Si(111)-√3×√3-Ga Surface Phase Md.Monzur-ul-akhir, Masayuki Mori, Hiroya Shimoyama, Koichi Maezawa (Univ. of Toyama) ED2017-23 CPM2017-9 SDM2017-17 |
[more] |
ED2017-23 CPM2017-9 SDM2017-17 pp.45-49 |
ED, SDM |
2017-02-24 11:25 |
Hokkaido |
Centennial Hall, Hokkaido Univ. |
Linear model analysis of the high order harmonic generation of the transmission line oscillator loaded with resonant tunneling diodes Koichi Maezawa, Takuro Kishi, Masayuki Mori (Univ. Toyama) ED2016-133 SDM2016-150 |
Small signal linear analysis was applied to the transmission line oscillators loaded with RTD pairs,which can output a h... [more] |
ED2016-133 SDM2016-150 pp.17-22 |
ED |
2016-08-10 11:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Application of the Frequency Delta Sigma Modulator to Digital-Output Sensors Koichi Maezawa, Shunya Fujino, Takahiro Yamaoka, Masaki Yamakawa, Tomoki Shimada, Yuichiro Kakutani, Takumi Tajika, Masayuki Mori (Univ. Toyama) ED2016-42 |
[more] |
ED2016-42 pp.65-70 |
ED |
2016-07-23 15:55 |
Tokyo |
Tokyo Metropolitan Univ. Minami-Osawa Campus, International House |
Heteroepitaxial Growth of InSb thin films on a Ge(111) substrate Takaaki Mitsueda, Masayuki Mori, Koichi Maezawa (Univ. Toyama) ED2016-31 |
Recently, the improvement of the performance by the reduction in device size of the semiconductor device with Si is reac... [more] |
ED2016-31 pp.21-24 |
CPM, ED, SDM |
2016-05-20 11:05 |
Shizuoka |
Shizuoka University, Hamamatsu campus (Joint Research Lab.) |
Heteroepitaxial Growth of GaSb Films on Si(111)-√3x√3-Ga Surface Phase Hiroya Shimoyama, Masayuki Mori, Koichi Maezawa (Univ. of Toyama) ED2016-24 CPM2016-12 SDM2016-29 |
The heteroepitaxial growth of GaSb films via Ga-induced surface phase (Si(111)-√3×√3-Ga) on Si(111) was studied. The gro... [more] |
ED2016-24 CPM2016-12 SDM2016-29 pp.51-54 |
ED, SDM |
2016-03-04 11:15 |
Hokkaido |
Centennial Hall, Hokkaido Univ. |
Delta Sigma Modulation Microphone Sensors Using a HEMT and a Cavity Resonator Takahiro Yamaoka, Shunya Fujino, Ryo Yamagishi, Masaki Yamakawa, Tomoki Shimada, Masayuki Mori, Koichi Maezawa (Univ. Toyama) ED2015-129 SDM2015-136 |
[more] |
ED2015-129 SDM2015-136 pp.45-48 |
CPM, OPE, LQE, R, EMD |
2015-08-27 14:15 |
Aomori |
Aomori-Bussankan-Asupamu |
[Invited Talk]
Heterogeneous Integration Technology Using Fluidic Self Assembly Based on Ga Molten Bumps Koichi Maezawa, Jun Nakano, Tomoaki Shibata, Hiroki Morita, Hiroshi Sakamoto, Satoshi Yamada, Masayuki Mori (Univ. Toyama) R2015-28 EMD2015-36 CPM2015-52 OPE2015-67 LQE2015-36 |
Fluidic Self Assembly (FSA) is a most promising heterogeneous integration technique leading to new applications of semic... [more] |
R2015-28 EMD2015-36 CPM2015-52 OPE2015-67 LQE2015-36 pp.27-32 |
ED |
2015-07-25 11:30 |
Ishikawa |
IT Business Plaza Musashi 5F |
Delta-Sigma Strain Sensor Using a Resonant Tunneling Diode Koichi Maezawa, Yuichiro Kakutani, Taishu Nakayama, Takumi Tajika, Masayuki Mori (Univ. Toyama) ED2015-46 |
A negative differential resistance (NDR) of resonant tunneling diodes (RTDs) is a basis for high frequency oscillators. ... [more] |
ED2015-46 pp.51-55 |
SDM, ED |
2015-02-05 17:25 |
Hokkaido |
Hokkaido Univ. |
Higher frequency signal detection than the fundamental oscillation frequency in resonant tunneling super regenerative detectors Koichi Maezawa, Jie Pan, Yuichiro Kakutani, Taishu Nakayama, Masayuki Mori (Univ. Toyama) ED2014-146 SDM2014-155 |
[more] |
ED2014-146 SDM2014-155 pp.45-49 |
ED, SDM |
2014-02-28 09:25 |
Hokkaido |
Hokkaido Univ. Centennial Hall |
Application of resonant tunneling diode oscillators to sensors Koichi Maezawa, Jie Pan, Yuichiro Kakutani, Jun Nakano, Masayuki Mori (Univ. of Toyama) ED2013-143 SDM2013-158 |
A negative differential resistance (NDR) of resonant tunneling diodes (RTDs) is a basis for high frequency oscillators. ... [more] |
ED2013-143 SDM2013-158 pp.61-66 |
ED |
2013-08-08 14:00 |
Toyama |
University of Toyama |
Ultrashort Pulse Generators Using Resonant Tunneling Diodes with Improved Power Performance Dongpo Wu, Katsutaro Mizumaki, Jie Pan, Masayuki Mori, Koichi Maezawa (Univ. of Toyama) ED2013-37 |
RTD pulse generators were designed and fabricated for improved power performance. 10-ps class pulse width with higher pe... [more] |
ED2013-37 pp.1-4 |
ED |
2013-08-08 14:25 |
Toyama |
University of Toyama |
Fluidic Self-Assembly for Heterogeneous Integration of High Performance Resonant Tunneling Diodes using Molten Gallium Bumps Jun Nakano, Tomoaki Shibata, Hiroki Morita, Hiroshi Sakamoto, Masayuki Mori, Koichi Maezawa (Univ. of Toyama) ED2013-38 |
Fluidic Self-Assembly (FSA) using molten metal bumps is one of the most promising Heterogeneous Integration (HI) technol... [more] |
ED2013-38 pp.5-8 |
ED |
2013-08-09 09:00 |
Toyama |
University of Toyama |
MEMS Microphones on InP Substrates for High Performance Digital Ultrasonic Sensors Shunya Fujino, Yuta Mizuno, Kazuhiro Takaoka, Masayuki Mori, Koichi Maezawa (Univ. of Toyama) ED2013-44 |
This paper describes the fabrication process of the MEMS microphones on InP substrates. The process is based on ozone as... [more] |
ED2013-44 pp.33-36 |
ED |
2013-08-09 11:20 |
Toyama |
University of Toyama |
Selective area growth of InSb on Si(111) substrate by using Sb induced surface reconstruction Wang Xin, Masayuki Mori, Koichi Maezawa (Univ. of Toyama) ED2013-49 |
Recently, devices with three-dimensional structure such as nanowire field effect transistor (NW-FETs) and FinFETs has ex... [more] |
ED2013-49 pp.61-65 |