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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2008-06-10
12:45		 Tokyo An401・402, Inst. Indus. Sci., The Univ. of Tokyo XPS real-time monitoring on the development of Si suboxides during formation of thermal oxide on Si(110) surface
Yoshihisa Yamamoto, Hideaki Togashi, Atsushi Konno, Mitsutaka Matsumoto, Atsushi Kato, Eiji Saito, Maki Suemitsu (Tohoku Univ.), Yuden Teraoka, Akitaka Yoshigoe (JAEA) SDM2008-53		 The growth process of thermal oxides on Si(110) surface and its interfacial bonding structures have been investigated by... [more] SDM2008-53
pp.65-70
CPM 2007-11-17
09:00		 Niigata Nagaoka University of Technology Growth of GaN by hot-mesh CVD -- Effect of Ru coated W mesh --
Yusuke Fukada, Kazuki Abe, Yuichiro Kuroki (Nagaoka Univ. Tech.), Maki Suemitsu, Takashi Ito (CIR. Tohoku Univ.), Yuzuru Narita (Kyusyu Inst. Tech.), Tetsuo Endoh (RIEC, Tohoku Univ.), Hideki Nakazawa (Hirosaki Univ.), Masasuke Takata, Kanji Yasui, Tadashi Akahane (Nagaoka Univ. Tech.) CPM2007-115		  [more] CPM2007-115
pp.55-58
SDM 2006-06-22
09:00		 Hiroshima Faculty Club, Hiroshima Univ. Comparison between Si(110) and Si(100) Surfaces in their Kinetics of Initial Oxidation -- From Real-time XPS Measurements --
Maki Suemitsu, Atsushi Kato, Hideaki Togashi, Atsushi Konno (Tohoku Univ.), Yuden Teraoka, Akitaka Yoshigoe (JAEA), Yuzuru Narita (KIT) 		By using real-time photoemission spectroscopy, kinetics of initial oxidation of Si(110)-16´2 surface has been investigat... [more] SDM2006-52
pp.61-63
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