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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED |
2012-12-18 10:50 |
Miyagi |
Tohoku University |
Frequency increase in terahertz oscillation of resonant tunneling diodes by thin and deep quantum wells Hidetoshi Kanaya, Riku Sogabe, Safumi Suzuki, Masahiro Asada (Tokyo Tech.) ED2012-104 |
We report on the increase in frequency for terahertz (THz) oscillating AlAs/InGaAs resonant tunneling diodes (RTDs) with... [more] |
ED2012-104 pp.63-67 |
WIT |
2012-03-09 13:00 |
Ibaraki |
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Preliminary survey on current problems and future possibilities in the field of cinema subtitle for hearing impaired Sawako Nakajima, Kazutaka Mitobe, Masafumi Suzuki, Noboru Yoshimura (Akita Univ.) WIT2011-74 |
[more] |
WIT2011-74 pp.25-29 |
EMD, R |
2012-02-17 14:05 |
Kyoto |
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A Study for lath-like Compound growth factor in Sn-Ni metalic plate(2) Sadanori Ito (itoken), Masafumi Suzuki (omron), Tomio Taniguchi (UP) R2011-48 EMD2011-122 |
Lath-like Ni-Sn intermetallics grow in Sn plate layer on Ni plate and cause worse solderability.
The compound appear in... [more] |
R2011-48 EMD2011-122 pp.37-40 |
EMD, R |
2011-02-18 16:40 |
Shizuoka |
Shizuoka Univ. (Hamamatsu) |
A Study on Plating Element and Solderbility for Ni/Sn Lath-like Intermetallic Sadanori Itou (itoken), Masafumi Suzuki (omron) R2010-50 EMD2010-151 |
[more] |
R2010-50 EMD2010-151 pp.49-52 |
ED |
2010-12-16 13:30 |
Miyagi |
Tohoku University (Research Institute of Electrical Communication) |
[Invited Talk]
Terahertz Oscillating Resonant Tunneling Diode at Room Temperature Safumi Suzuki, Masahiro Asada (Tokyo Tech.) ED2010-158 |
We report on recent results of terahertz oscillators using resonant tunneling diodes. We achieved a fundamental oscillat... [more] |
ED2010-158 pp.1-6 |
ED |
2010-12-16 14:10 |
Miyagi |
Tohoku University (Research Institute of Electrical Communication) |
Transit Time Reduction with Graded Emitter in Resonant Tunneling Diode Terahertz Oscillators Atsushi Teranishi, Safumi Suzuki, Kaoru Shizuno, Masahiro Asada (Tokyo Tech), Hiroki Sugiyama, Haruki Yokoyama (NTT) ED2010-159 |
We fabricated terahertz oscillators using GaInAs/AlAs double-barrier resonant tunneling diodes with graded emitters on I... [more] |
ED2010-159 pp.7-12 |
ED, SDM |
2010-06-30 16:10 |
Tokyo |
Tokyo Inst. of Tech. Ookayama Campus |
Fundamental oscillations at ~900 GHz with low bias voltages in RTDs having spike-doped structures Safumi Suzuki, Kiyohito Sawada, Atsushi Teranishi, Masahiro Asada (Tokyo Inst. of Tech.), Hiroki Sugiyama, Haruki Yokoyama (NTT) ED2010-61 SDM2010-62 |
We demonstrate fundamental oscillations at around 900 GHz with low bias voltages in resonant tunnelling diodes (RTDs) ha... [more] |
ED2010-61 SDM2010-62 pp.47-48 |
ED |
2009-11-30 09:00 |
Osaka |
Osaka Science & Technology Center |
Resonant Tunneling Diode Terahertz (0.8-0.9THz) Oscillators with Spike Doping for Low Voltage Operation Kiyohito Sawada, Safumi Suzuki, Atsushi Teranishi, Masato Shiraishi, Masahiro Asada (Tokyo Tech.), Hiroki Sugiyama, Haruki Yokoyama (NTT) ED2009-166 |
We demonstrate fundamental oscillations at around 900 GHz with low bias voltages in resonant tunneling diodes (RTDs) hav... [more] |
ED2009-166 pp.37-40 |
EMCJ, MW |
2005-10-28 13:45 |
Akita |
Akita University |
Analysis of varistors by using equivalent circuit Mahmudul Kabir, Masafumi Suzuki, Noboru Yoshimura (Akita Univ.) |
Recently, varistors are getting smaller day by day with the mobile electrical appliances. We have succeeded to make an e... [more] |
EMCJ2005-100 MW2005-106 pp.43-46 |
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