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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2015-01-27 10:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
High Ion/Ioff Ge-source Ultrathin Body Strained-SOI Tunnel FETs
-- Impact of Channel Strain, MOS Interfaces and Back Gate on the Electrical Properties -- Minsoo Kim, Yuki K. Wakabayashi, Ryosho Nakane, Masafumi Yokoyama, Mitsuru Takenaka, Shinichi Takagi (The Univ. of Tokyo)  SDM2014-137 |
High performance operation of Ge-source/strained-Si-channel hetero-junction tunnel FETs is demonstrated. It is found tha... [more] | SDM2014-137 pp.9-12 |
| OPE, LQE | 2014-12-19 14:50 |
Tokyo | Kikai-Shinko-Kaikan, NTT Atsugi R&D center | Thermal resistance improvement and low-resistance lateral PIN junction formation technique on III-V-OI wafers Yuki Ikku, Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo) OPE2014-146 LQE2014-133 |
III-V CMOS photonics is a platform which enables strong optical confinement to the III-V waveguides by using III-V-on-In... [more] | OPE2014-146 LQE2014-133 pp.37-40 |
| OPE, LQE | 2014-06-20 16:40 |
Tokyo | Small, low-crosstalk optical switches using III-V CMOS photonics platform Yuki Ikku, Masafumi Yokoyama, Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo) OPE2014-21 LQE2014-26 |
III-V CMOS photonics is a platform which enables strong optical confinement for the III-V waveguides by using III-V on i... [more] | OPE2014-21 LQE2014-26 pp.39-42 |
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| SDM | 2014-01-29 15:05 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
High Performance Sub-20-nm-Channel-Length Extremely-Thin Body InAs-on-Insulator Tri-Gate MOSFETs with High Short Channel Effect Immunity and Vth Tunability S. H. Kim, Masafumi Yokoyama, Ryosho Nakane (Univ. of Tokyo), Osamu Ichikawa, Takenori Osada, Masahiko Hata (Sumitomo Chemical), Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo) SDM2013-144 |
[more] | SDM2013-144 pp.39-42 |
| SDM | 2013-06-18 11:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Impact of metal gate electrodes on electrical properties of InGaAs MOS gate stacks Chih-Yu Chang, Masafumi Yokoyama, Sang-Hyeon Kim (Univ. of Tokyo), Osamu Ichikawa, Takenori Osada, Masahiko Hata (Sumitomo Chemical), Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo) SDM2013-50 |
Electrical properties of Al2O3 and HfO2/InGaAs metal-oxide-semiconductor (MOS) capacitors with Al, Au and Pd gate electr... [more] | SDM2013-50 pp.33-37 |
| SDM, ED (Workshop) |
2012-06-29 09:15 |
Okinawa | Okinawa Seinen-kaikan | [Invited Talk]
III-V/Ge integration on Si platform for electronic-photonic integrated circuits Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo) |
We have investigated heterogeneous integration of III-Vs and Ge on the Si platform for electronics and photonics. Owing ... [more] | |
| EMD, OPE, LQE, CPM | 2010-08-26 15:00 |
Hokkaido | Chitose Arcadia Plaza | III-V CMOS platform technologies for high-performance electric-photonic integrated circuits Mitsuru Takenaka, Masafumi Yokoyama, Masakazu Sugiyama, Yoshiaki Nakano, Shinichi Takagi (Univ. of Tokyo.) EMD2010-35 CPM2010-51 OPE2010-60 LQE2010-33 |
[more] | EMD2010-35 CPM2010-51 OPE2010-60 LQE2010-33 pp.45-48 |
| ED, SDM | 2010-07-01 10:45 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | [Invited Talk]
III-V/Ge CMOS technologies and heterogeneous integrations on Si platform Shinichi Takagi, Mitsuru Takenaka (Univ. of Tokyo.) ED2010-78 SDM2010-79 |
CMOS utilizing high mobility III-V/Ge channels on Si substrates is expected to be one of key devices for high performanc... [more] | ED2010-78 SDM2010-79 pp.119-124 |
| SDM | 2010-06-22 14:10 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Relationships among Interface Composition, Bonding Structures and MIS Properties at High-k/III-V Interfaces Tetsuji Yasuda, Noriyuki Miyata, Yuji Urabe, Hiroyuki Ishii, Taro Itatani, Tatsuro Maeda (AIST), Hisashi Yamada, Noboru Fukuhara, Masahiko Hata (Sumitomo Chemical), Akihiro Ohtake (NIMS), Takuya Hoshii, Masafumi Yokoyama, Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo) SDM2010-42 |
There has been a significant interest in the III-V channel MISFET technology which expectedly enables performance improv... [more] | SDM2010-42 pp.49-54 |
| SDM | 2009-06-19 11:20 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Electrical Properties of Ge MIS Interface Defects Noriyuki Taoka, Wataru Mizubayashi, Yukinori Morita, Shinji Migita, Hiroyuki Ota (MIRAI-NIRC), Shinichi Takagi (MIRAI-NIRC/Univ. of Tokyo) SDM2009-30 |
The response of majority and minority carriers with interface traps have been systematically investigated for Ge MIS int... [more] | SDM2009-30 pp.21-26 |
| SDM | 2008-06-09 13:30 |
Tokyo | An401・402, Inst. Indus. Sci., The Univ. of Tokyo | [Tutorial Lecture]
Current Status and Prospects of High Mobility Channel Technologies for High performance CMOS Shinichi Takagi (Univ. of Tokyo/MIRAI-AIST) SDM2008-42 |
Saturation of CMOS performance has been evident in the present 45 nm technology and beyond because of the a variety of l... [more] | SDM2008-42 pp.1-6 |
| SDM | 2007-06-08 15:05 |
Hiroshima | Hiroshima Univ. ( Faculty Club) | Characteristics of HfO2/Ge-nitride/Ge MIS structures Tatsuro Maeda, Yukinori Morita, Masayasu Nishizawa (AIST), Shinichi Takagi (AIST/Univ. of Tokyo) SDM2007-50 |
[more] | SDM2007-50 pp.101-106 |
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