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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 23  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
MW, ED 2021-01-29
14:25		 Online Online Improved power-added-efficiency in GaN-HEMT on freestanding GaN substrate with reduced interface contamination
Yusuke Kumazaki, Toshihiro Ohki, Junji Kotani, Shiro Ozaki (Fujitsu/Fujitsu Labs.), Yoshitaka Niida (Fujitsu Labs.), Yuichi Minoura (Fujitsu/Fujitsu Labs.), Masato Nishimori (Fujitsu), Naoya Okamoto (Fujitsu/Fujitsu Labs.), Masaru Sato, Norikazu Nakamura (Fujitsu Labs.), Keiji Watanabe (Fujitsu/Fujitsu Labs.) ED2020-34 MW2020-87		  [more] ED2020-34 MW2020-87
pp.34-37
MW, ED 2017-01-26
14:50		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] Current Status of Millimeter-Wave GaN-HEMTs
Kozo Makiyama, Yoshitaka Niida, Shiro, Toshihiro Ohki, Naoya Okamoto, Yuichi Minoura, Masaru Sato, Youichi Kamata, Kazukiyo Jpshin, Keiji Watanabe (Fujitsu), Yasuyuki Miyamoto (Tokyo Tech.) ED2016-98 MW2016-174		  [more] ED2016-98 MW2016-174
pp.13-16
ED 2016-07-23
14:00		 Tokyo Tokyo Metropolitan Univ. Minami-Osawa Campus, International House Surface-oxide-controlled InAlN/GaN MOS-HEMT Using Water Vapor
Shiro Ozaki, Kozo Makiyama, Toshihiro Ohki, Yoichi Kamada, Masaru Sato, Yoshitaka Niida, Naoya Okamoto, Kazukiyo Joshin (Fujitsu Lab.) ED2016-27		  [more] ED2016-27
pp.1-4
ED 2015-07-24
14:05		 Ishikawa IT Business Plaza Musashi 5F Low Damage Dry Etching for Recessed Gate AlGaN/GaN-HEMTs
Yuichi Minoura, Naoya Okamoto, Toshihiro Ohki, Shiro Ozaki, Kozo Makiyama, Yoichi Kamada, Keiji Watanabe (Fujitsu Labs.) ED2015-38		  [more] ED2015-38
pp.9-13
MW, ED 2015-01-16
10:40		 Tokyo Kikai-Shinko-Kaikan Bldg. X-Ku wide-bandwidth GaN HEMT MMIC Amplifier with Small Deviation of Output Power and PAE
Yoshitaka Niida, Yoichi Kamada, Toshihiro Ohki, Shiro Ozaki, Kozo Makiyama, Naoya Okamoto, Masaru Sato, Satoshi Masuda, Keiji Watanabe (Fujitsu Lab.) ED2014-127 MW2014-191		  [more] ED2014-127 MW2014-191
pp.59-63
LQE, ED, CPM 2014-11-28
13:15		 Osaka   Suppression in Current Collapse of Millimeter-Wave GaN-HEMT Using MSQ-Based Low-k Insulator Films
Shiro Ozaki, Kozo Makiyama, Toshihiro Ohki, Yoichi Kamada, Masaru Sato, Yoshitaka Niida, Naoya Okamoto, Satoshi Masuda, Kazukiyo Joshin (Fujitsu) ED2014-90 CPM2014-147 LQE2014-118		 We have investigated the effect of moisture on current collapse of GaN high electron mobility transistor (GaN-HEMT) when... [more] ED2014-90 CPM2014-147 LQE2014-118
pp.81-84
ED, LQE, CPM 2012-11-29
15:50		 Osaka Osaka City University Reduction in Threshold Voltage Shift of Insulated-gate GaN-HEMT Using ALD-Al2O3 Films
Shiro Ozaki, Toshihiro Ohki, Masahito Kanamura, Tadahiro Imada, Norikazu Nakamura, Naoya Okamoto, Toyoo Miyajima, Toshihide Kikkawa (Fujitsu Laboratories Ltd.) ED2012-75 CPM2012-132 LQE2012-103		 We reported the threshold voltage (Vth) shift phenomena of insulated-gate GaN high electron mobility transistor (HEMT) f... [more] ED2012-75 CPM2012-132 LQE2012-103
pp.41-44
LQE, ED, CPM 2011-11-17
16:45		 Kyoto Katsura Hall，Kyoto Univ. Si Ion Implantated GaN-HEMT for Millimeter-Wave Applications
Masato Nishimori, Kozo Makiyama, Toshihiro Ohki, Atsushi Yamada, Kenji Imanishi, Toshihide Kikkawa, Naoki Hara, Keiji Watanabe (Fujitsu Lab.) ED2011-85 CPM2011-134 LQE2011-108		  [more] ED2011-85 CPM2011-134 LQE2011-108
pp.61-65
CPM, LQE, ED 2010-11-11
16:50		 Osaka   High-Power GaN-HEMT for Millimeter-Wave Amplifier
Kozo Makiyama, Toshihiro Ohki, Naoya Okamoto, Masahito Kanamura, Satoshi Masuda, Yasuhiro Nakasha, Kazukiyo Joshin, Kenji Imanishi (Fujitsu, Fujitsu Labs.), Naoki Hara, Shiro Ozaki, Norikazu Nakamura (Fujitsu Labs.), Toshihide Kikkawa (Fujitsu, Fujitsu Labs.) ED2010-153 CPM2010-119 LQE2010-109		  [more] ED2010-153 CPM2010-119 LQE2010-109
pp.51-54
ED, MW 2010-01-15
09:30		 Tokyo Kikai-Shinko-Kaikan Bldg A 20-Gb/s Pulse Generator with 4.9-ps FWHM using 75-nm InP HEMTs
Yasuhiro Nakasha, Yoichi Kawano, Toshihide Suzuki (Fujitsu), Toshihiro Ohki (Fujitsu Labs), Tsuyoshi Takahashi, Kozo Makiyama, Naoki Hara (Fujitsu) ED2009-190 MW2009-173		  [more] ED2009-190 MW2009-173
pp.87-92
MW 2009-09-25
15:15		 Tokyo Univ. of Electro-Communications C-band 340-W and X-band 100-W GaN Power Amplifiers with Over 50-% PAE
Hisao Shigematsu, Yusuke Inoue, Akihiko Akasegawa, Satoshi Masuda, Masao Yamada, Masahito Kanamura, Toshihiro Ohki, Kozo Makiyama, Naoya Okamoto, Kenji Imanishi, Toshihide Kikkawa, Kazukiyo Joshin, Naoki Hara (Fujitsu Lab.) MW2009-86		 In this paper, we report an X-band power amplifier with over 100-W output power using 0.25-μm GaN-HEMTs and a C-band pow... [more] MW2009-86
pp.73-78
ED 2009-06-12
11:25		 Tokyo   Effect of Epitaxial Layer Design on Drain Leakage Current for Millimeter-Wave GaN-HEMT
Atsushi Yamada, Kozo Makiyama, Toshihiro Ohki, Masahito Kanamura, Kazukiyo Joshin, Kenji Imanishi (Fujitsu and Fujitsu Labs.), Naoki Hara (Fujitsu Labs.), Toshihide Kikkawa (Fujitsu and Fujitsu Labs.) ED2009-48		 In this paper, GaN channel and AlGaN buffer layer structure in the GaN-HEMT was optimized to achieve a good balance betw... [more] ED2009-48
pp.63-67
MW, ED 2009-01-16
09:30		 Tokyo Kikai-Shinko-Kaikan Bldg C-band GaN-HEMT Power Amplifier with Over 300-W Output Power and Over 50-% Efficiency
Hisao Shigematsu, Yusuke Inoue, Satoshi Masuda, Masao Yamada, Masahito Kanamura, Toshihiro Ohki, Kozo Makiyama, Naoya Okamoto, Kenji Imanishi, Toshihide Kikkawa, Kazukiyo Joshin, Naoki Hara (Fujitsu Lab. Ltd.,) ED2008-218 MW2008-183		  [more] ED2008-218 MW2008-183
pp.113-118
MW, ED 2009-01-16
10:55		 Tokyo Kikai-Shinko-Kaikan Bldg High-Power GaN-HEMT with High Three-Terminal Breakdown Voltage for W-band Applications
Kozo Makiyama, Toshihiro Ohki, Masahito Kanamura, Kazukiyo Joshin, Kenji Imanishi (Fujitsu Ltd/Fujitsu Lab. Ltd.), Naoki Hara (Fujitsu Lab. Ltd.), Toshihide Kikkawa (Fujitsu Ltd/Fujitsu Lab. Ltd.) ED2008-221 MW2008-186		 We reported on a technology to improve the three-terminal breakdown voltage of a GaN high electron mobility transistor (... [more] ED2008-221 MW2008-186
pp.129-133
ED 2008-12-19
15:55		 Miyagi Tohoku Univ. A W-band 10-Gb/s Wavelet Generator Using 0.13-um InP HEMTs for Impulse Radio Systems
Yasuhiro Nakasha, Yoichi Kawano, Toshihide Suzuki (Fujitsu), Toshihiro Ohki (Fujitsu Labs.), Tsuyoshi Takahashi, Kozo Makiyama (Fujitsu), Tatsuya Hirose (Fujitsu Labs.), Naoki Hara (Fujitsu) ED2008-189		 A wavelet generator (WG) based on simple impulse radio (IR) architecture has been developed to use for multi-gigabit com... [more] ED2008-189
pp.27-32
LQE, ED, CPM 2008-11-28
13:55		 Aichi Nagoya Institute of Technology An Over 100 W AlGaN/GaN Enhancement-Mode HEMT Power Amplifier
Toshihiro Ohki, Toshihide Kikkawa, Masahito Kanamura, Kenji Imanishi, Kozo Makiyama, Naoya Okamoto, Kazukiyo Joshin, Naoki Hara (Fujitsu, Fujitsu Labs.) ED2008-178 CPM2008-127 LQE2008-122		  [more] ED2008-178 CPM2008-127 LQE2008-122
pp.131-136
MW, EMCJ 2008-10-24
11:25		 Yamagata Yamagata Univ. InPHEMT MMICs for passive millimeter-wave imaging sensors
Masaru Sato, Tatsuya Hirose, Toshihiro Ohki, Tsuyoshi Takahashi, Kozo Makiyama, Naoki Hara (Fujigtsu), Hiroyasu Sato, Kunio Sawaya, Koji Mizuno (Tohoku Univ.) EMCJ2008-72 MW2008-116		  [more] EMCJ2008-72 MW2008-116
pp.77-80
ED 2008-06-14
09:00		 Ishikawa Kanazawa University InP HEMT device technology for ultra-high-speed MMIC
Naoki Hara, Tsuyoshi Takahashi, Kozo Makiyama (Fujitsu), Toshihiro Ohki (Fujitsu Lab) ED2008-32		 We have developed InP-based HEMT technology suitable for fabricating ultra-high-speed MMIC. Scaling of both vertical and... [more] ED2008-32
pp.55-60
ED 2007-11-27
14:20		 Miyagi Tohoku Univ. Research Institute of Electrical Communication A 7.6-ps InP-HEMT pulse generator for multi-Gbps millimeter-wave communication systems
Yasuhiro Nakasha, Yoichi Kawano, Toshihide Suzuki (Ｆｕｊｉｔｓｕ), Toshihiro Ohki (Fujitsu Labs.), Tsuyoshi Takahashi, Kozo Makiyama (Ｆｕｊｉｔｓｕ), Tatsuya Hirose (Fujitsu Labs.), Naoki Hara (Ｆｕｊｉｔｓｕ) ED2007-189		 Using a 0.13-um-gate-length InP-HEMT technology, we developed a simple pulse generator circuit (PG) with a logical negat... [more] ED2007-189
pp.11-16
SDM, R, ED 2007-11-16
15:20		 Osaka   Degradation-Mode Analysis for Highly Reliable GaN-HEMT
Yusuke Inoue, Satoshi Masuda, Masahito Kanamura, Toshihiro Ohki, Kozo Makiyama, Naoya Okamoto, Kenji Imanishi, Toshihide Kikkawa, Naoki Hara, Hisao Shigematsu, Kazukiyo Joshin (Fujitsu Labs. Ltd.) R2007-51 ED2007-184 SDM2007-219		  [more] R2007-51 ED2007-184 SDM2007-219
pp.27-31
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