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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, SDM 2010-06-30
15:45		 Tokyo Tokyo Inst. of Tech. Ookayama Campus Reliability study on the emitter-base junction for high-speed sub-micron InP HBTs
Yoshino K. Fukai, Kenji Kurishima, Norihide Kashio, Shoji Yamahata (NTT Photonics Labs.) ED2010-70 SDM2010-71		  [more] ED2010-70 SDM2010-71
pp.81-84
R 2009-11-20
14:45		 Osaka   Emitter - metal - related degradation in InP-based HBTs and its suppression by introducing refractory metal
Yoshino K. Fukai, Kenji Kurishima, Norihide Kashio, Minoru Ida, Shoji Yamahata, Takatomo Enoki (NTT Corp.) R2009-43		  [more] R2009-43
pp.11-16
ED, MW 2008-01-17
11:35		 Tokyo Kikai-Shinko-Kaikan Bldg. Highly reliable 0.5-um-emitter InP/InGaAs HBT
Norihide Kashio, Kenji Kurishima, Yoshino K. Fukai, Shoji Yamahata (NTT) ED2007-218 MW2007-149		  [more] ED2007-218 MW2007-149
pp.67-70
ED, SDM 2007-06-25
13:00		 Overseas Commodore Hotel Gyeongju Chosun, Gyeongju, Korea [Invited Talk] High-performance and reliable InP/InGaAs HBTs operating at high current density
Shoji Yamahata, Norihide Kashio, Kenji Kurishima, Yoshino K. Fukai (NTT), Yasuyuki Miyamoto (TOKYO TECH) 		This paper describes the high-performance and reliability of scaled InP/InGaAs HBTs with a passivation ledge structure a... [more]
R, ED, SDM 2005-11-25
14:25		 Osaka Central Electric Club Highly reliable InP-based HBTs with a ledge structure operating at current density over 2mA/um2
Yoshino K. Fukai, Kenji Kurishima, Minoru Ida, Shoji Yamahata, Takatomo Enoki (NTT Photonics Labs.) 		 [more] R2005-43 ED2005-178 SDM2005-197
pp.31-35
 Results 1 - 5 of 5  /   
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