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ICD 2013-04-12
16:20		 Ibaraki Advanced Industrial Science and Technology (AIST) NMOS-Inside 6T SRAM Layout Reducing Neutron-Induced Multiple Cell Upsets
Shusuke Yoshimoto, Shintaro Izumi, Hiroshi Kawaguchi, Masahiko Yoshimoto (Kobe Univ.) ICD2013-23		 This paper presents a proposed NMOS-centered 6T SRAM cell layout that reduces a neutron-induced multiple-cell-upset (MCU... [more] ICD2013-23
pp.121-126
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