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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, CPM, SDM 2015-05-28
17:05
Aichi Venture Business Laboratory, Toyohashi University of Technology Device simulation of NO2-exposed H-terminated diamond FETs with Al2O3 insulator
Toshiyuki Oishi, Ryutaro Higashi, Kazuya Harada, Yuta Koga (Saga Univ.), Kazuyuki Hirama (NTT), Makoto Kasu (Saga Univ.) ED2015-24 CPM2015-9 SDM2015-26
This paper investigated the simulation model for NO2-exposed H-terminated diamond FETs with Al2O3 insulator gate, which ... [more] ED2015-24 CPM2015-9 SDM2015-26
pp.41-44
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