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Committee Date Time Place Paper Title / Authors Abstract Paper #
VLD, DC, CPSY, RECONF, CPM, ICD, IE, IPSJ-SLDM, IPSJ-EMB, IPSJ-ARC
(Joint) [detail]
2018-12-07
09:00
Hiroshima Satellite Campus Hiroshima Design and fabrication of characteristics measurement circuit for CMOS-compatible ultra-low-power non-volatile memory element using FiCC
Ippei Tanaka, Naoyuki Miyagawa, Tomoya Kimura, Takashi Imagawa, Hiroyuki Ochi (Ritsumeikan Univ.) VLD2018-65 DC2018-51
This report proposes a new non-volatile memory element that can be fabricated with a standard CMOS process, and that can... [more] VLD2018-65 DC2018-51
pp.183-188
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