Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2023-11-09 11:20 |
Tokyo |
(Primary: On-site, Secondary: Online) |
[Invited Talk]
Current Status and Future Prospects of GaN Vertical Power Devices on GaN substrates Jun Suda (Nagoya Univ.) SDM2023-63 |
Recent progress of GaN vertical power devices which fabricated on n-type GaN bulk substates. Fundamental properties of ... [more] |
SDM2023-63 p.7 |
SDM |
2023-11-10 14:40 |
Tokyo |
(Primary: On-site, Secondary: Online) |
[Invited Talk]
Characterization of Physical Properties in GaN under High Electric Field
-- Impact Ionization Coefficients and Critical Electric Field -- Takuya Maeda (UTokyo) SDM2023-72 |
The accurate device simulation and prediction of the safe operating region for power devices require precise values of m... [more] |
SDM2023-72 pp.41-46 |
EE, OME, CPM |
2022-12-09 11:20 |
Tokyo |
(Primary: On-site, Secondary: Online) |
Investigation for one-chip high functionality gate driver IC Yusuke Ogushi, Satoshi Matsumoto (KIT) EE2022-22 CPM2022-77 OME2022-35 |
GaN power devices have caught the attentions for high frequency switching and high efficiency of power supply. Our goal ... [more] |
EE2022-22 CPM2022-77 OME2022-35 pp.18-23 |
SDM |
2021-11-12 10:30 |
Online |
Online |
[Invited Talk]
Full band Monte Carlo analysis of the uniaxial stress impact on 4H-SiC high energy transport Tomoya Nishimura, Katsumi Eikyu, Kenichiro Sonoda, Tamotsu Ogata (Renesas Electronics) SDM2021-61 |
SiC is expected to be the next-generation semiconductor material especially for power devices, and some have been put in... [more] |
SDM2021-61 pp.43-46 |
EE, IEE-SPC |
2021-07-20 09:55 |
Online |
Online |
Consideration of dominant switching timing separation on radiated noise using SiC MOSFET half bridge Toshiya Tadakuma (Kyushu Univ.), Yuki Matsutaka, Shin Suzuki, Motonobu Joko (Mitsubishi Electric), Masahito Shoyama (Kyushu Univ.) EE2021-11 |
Improving characteristics of power devices are indispensable for improving power electronics technology, and the evoluti... [more] |
EE2021-11 pp.21-25 |
EE, OME, CPM |
2020-12-11 10:45 |
Online |
Online |
Introduction of Power DEM (Device Embedded Module) technology & CSIPOS Shigehiro Hayashi, Haruki Sueyoshi, Kanta Nogita (Fukuoka IST), Younggun HAN, Yoshihisa Katoh (CSIPOS), Tadashi Suetsugu (ukuoka Univ.) EE2020-16 CPM2020-48 OME2020-1 |
(To be available after the conference date) [more] |
EE2020-16 CPM2020-48 OME2020-1 pp.1-6 |
SDM |
2020-11-20 10:30 |
Online |
Online |
[Invited Talk]
Power Device Degradation Estimation by Machine Learning of Gate Waveforms Hiromu Yamasaki, Koutaro Miyazaki, Yang Lo, A. K. M. Mahfuzul Islam, Katsuhiro Hata, Takayasu Sakurai, Makoto Takamiya (Univ. of Tokyo) SDM2020-29 |
A method to detect bonding wire lift-off of SiC MOSFETs using machine learning from the gate voltage waveform is propose... [more] |
SDM2020-29 pp.32-35 |
SDM |
2019-11-08 13:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Three-dimensional accurate TCAD simulation of trench-gate Si-IGBTs Masahiro Watanabe, Naoyuki Shigyo, Takuya Hoshii, Kazuyoshi Furukawa, Kuniyuki Kakushima (Tokyo Tech.), Katsumi Satoh (Mitsubishi Electric Corp.), Tomoko Matsudai (Toshiba Electronic Devices & Storage Corp.), Takuya Saraya, Toshihiko Takakura, Kazuo Itou, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi (The University of Tokyo), Iriya Muneta, Hitoshi Wakabayashi (Tokyo Tech.), Akira Nakajima (AIST), Shin-ichi Nishizawa (Kyushu University, Kasuga), Kazuo Tsutsui (Tokyo Tech.), Toshiro Hiramoto (The University of Tokyo), Hiromichi Ohashi, Hiroshi Iwai (Tokyo Tech.) SDM2019-77 |
In this work, excellent agreement between 3D TCAD simulations and experimental current-voltage characteristics were obta... [more] |
SDM2019-77 pp.45-48 |
LQE, OPE, CPM, EMD, R |
2019-08-22 16:00 |
Miyagi |
|
[Invited Talk]
Reconsideration of TDDB Statistics of Thick Dielectric Films Used in SiC/GaN Power/RF Devices and Image Sensors Kenji Okada (TowerJazz Panasonic Semiconductor) R2019-25 EMD2019-23 CPM2019-24 OPE2019-52 LQE2019-30 |
Recent advances of GaN/SiC power devices, RF/MMIC (monolithic microwave integrated circuit) devices, and also Image Sens... [more] |
R2019-25 EMD2019-23 CPM2019-24 OPE2019-52 LQE2019-30 pp.29-34 |
SDM |
2019-01-29 15:40 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi (Univ. of Tokyo), Masanori Tsukuda (GRIK), Yohichiroh Numasawa (Meiji Univ.), Katsumi Satoh (Mitsubishi Electric), Tomoko Matsudai, Wataru Saito (Toshiba Electronic Devices & Storage), Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Naoyuki Shigyo, Kazuo Tsutsui, Hiroshi Iwai (Tokyo Tech), Atsushi Ogura (Meiji Univ.), Shin-ichi Nishizawa (Kyushu Univ.), Ichiro Omura (Kyushu Inst. of Tech.), Hiromichi Ohashi (Tokyo Tech), Toshiro Hiramoto (Univ. of Tokyo) SDM2018-90 |
Functional trench-gated 1200V-10A class Si-IGBTs, designed based on the scaling concept, were fabricated, and 5V gate vo... [more] |
SDM2018-90 pp.39-44 |
ED, LQE, CPM |
2018-11-29 14:15 |
Aichi |
Nagoya Inst. tech. |
Improvement of channel mobility in GaN-MOS structure by surface treatment of recessed-GaN and dielectric SiO2 annealing Yosuke Kajiwara, Aya Shindome, Toshiki Hikosaka, Masahiko Kuraguchi (Toshiba Corp.), Akira Yoshioka (Toshiba Electronic Device & Storage Corp.), Shinya Nunoue (Toshiba Corp.) ED2018-35 CPM2018-69 LQE2018-89 |
In the previous work, we studied on the channel mobility in the Normally-off recessed GaN-based metal-oxide-semiconducto... [more] |
ED2018-35 CPM2018-69 LQE2018-89 pp.13-16 |
ED, LQE, CPM |
2018-11-30 09:00 |
Aichi |
Nagoya Inst. tech. |
A 2.5-kV-breakdown-voltage AlGaN-channel HFET with a strain-controlled AlGaInN barrier layer Daiki Hosomi, Keita Furuoka, Heng Chen, Saki Saito, Toshiharu Kubo, Takashi Egawa, Makoto Miyoshi (Nagoya Inst. of Tech.) ED2018-41 CPM2018-75 LQE2018-95 |
Novel AlGaN-channel heterostructures employing quaternary AlGaInN barriers were grown by metalorganic chemical vapor dep... [more] |
ED2018-41 CPM2018-75 LQE2018-95 pp.41-44 |
ED, CPM, SDM |
2018-05-24 15:50 |
Aichi |
Toyohashi Univ. of Tech. (VBL) |
Temperature dependence of hydrogen-related donor in FZ-Silicon Akira Kiyoi, Katsumi Nakamura (Mitsubishi Electric Corp.) ED2018-19 CPM2018-6 SDM2018-14 |
Temperature dependence of Hydrogen-related Donor (HD) and silicon self-interstitials has been investigated in order to c... [more] |
ED2018-19 CPM2018-6 SDM2018-14 pp.23-28 |
ICD, CPSY, CAS |
2017-12-14 15:10 |
Okinawa |
Art Hotel Ishigakijima |
Accelerated Transient Analysis of Power MOSFETs by the Matrix Exponential Method Tatsuya Kamei, Shigetaka Kumashiro, Kazutoshi Kobayashi (KIT) CAS2017-87 ICD2017-75 CPSY2017-84 |
In designing and developing power devices, reduction of simulation time is required. In this study, an accurate metric f... [more] |
CAS2017-87 ICD2017-75 CPSY2017-84 pp.107-112 |
SDM |
2017-11-10 14:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
An Accurate Metric to Control Time Step of Transient Device Simulation by Matrix Exponential Method Shigetaka Kumashiro, Tatsuya Kamei, Akira Hiroki, Kazutoshi Kobayashi (KIT) SDM2017-70 |
An accurate metric for the time step control in the power device transient simulation is proposed. This metric contains ... [more] |
SDM2017-70 pp.47-52 |
EE, WPT, IEE-SPC [detail] |
2017-07-28 09:10 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
A Study of Router for Bidirectional Power Packet Dispatching Naomitsu Yoshida (Kyoto Univ.), Ryo Takahashi (Aichi Univ. of Tech.), Takashi Hikihara (Kyoto Univ.) EE2017-21 WPT2017-26 |
Power packets deliver electric power with the information tag attached as its voltage waveform physically.
In the powe... [more] |
EE2017-21 WPT2017-26 pp.71-74 |
MW, ED |
2017-01-26 14:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Lecture]
GaN Power Transistors on Si Substrates for Switching and High-Frequency Applications Tetsuzo Ueda, Yasuhiro Uemoto, Hiroyuki Sakai, Tsuyoshi Tanaka (Panasonic), Daisuke Ueda (Kyoto Insutitute of Tech.) ED2016-96 MW2016-172 |
GaN transistors have been widely investigated for power deices to be used in various power switching systems. In additio... [more] |
ED2016-96 MW2016-172 pp.1-5 |
MW, ED |
2017-01-26 15:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Lecture]
Towards Realization of GaN Vertical Power Devices Jun Suda (Kyoto Univ.) ED2016-99 MW2016-175 |
GaN vertical power devices have attracted much attention as next-generation high-voltage low-on-resistance power devices... [more] |
ED2016-99 MW2016-175 pp.17-18 |
CPM, LQE, ED |
2016-12-12 15:20 |
Kyoto |
Kyoto University |
Evaluating Current Collapse of GaN HEMT devices by Carrier Number Kohei Oasa, Akira Yoshioka, Yasunobu Saito, Takuo Kikuchi, Tatsuya Ohguro, Takeshi Hamamoto, Toru Sugiyama (TOSHIBA) ED2016-62 CPM2016-95 LQE2016-78 |
We report a new method to evaluate current collapse. To exclude self-heating effect during dynamic test, we propose carr... [more] |
ED2016-62 CPM2016-95 LQE2016-78 pp.27-30 |
CPM, LQE, ED |
2016-12-13 13:00 |
Kyoto |
Kyoto University |
Growth and application of corundum-structured n- and p-type wide band gap oxide semiconductors Kentaro Kaneko (Kyoto Univ.), Toshimi Hitora (FLOSFIA INC.), Shizuo Fujita (Kyoto Univ.) ED2016-74 CPM2016-107 LQE2016-90 |
Electronic carrier concentrations in corundum-structured α-In2O3 thin films decreased by being doped with a Mg ion. A M... [more] |
ED2016-74 CPM2016-107 LQE2016-90 pp.85-88 |