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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| DC | 2021-02-05 10:30 |
Online | Online | A Study on a Method of Measuring Process Variations Considering the Effect of Wire Delay on FPGA Shingo Tsutsumi, Yukiya Miura (Tokyo Metropolitan Univ.)  DC2020-69 |
FPGAs are integrated circuits that can be implemented arbitrary logic functions. In FPGAs, it is important to measure pr... [more] | DC2020-69 pp.1-6 |
| DC | 2020-02-26 15:45 |
Tokyo | Frequency Variation of Ring Oscillators During Long-Time Operation on FPGA Shingo Tsutsumi, Yukiya Miura (Tokyo Metropolitan Univ.) DC2019-95 |
FPGAs (Field Programmable Gate Arrays) are integrated circuits that can be implemented arbitrary logic functions by reco... [more] | DC2019-95 pp.55-60 |
|
| ED, MW | 2020-01-31 16:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Research and development of compound semiconductor electron devices and high-frequency measurement technologies for millimeter- and submillimeter-wave wireless communications Issei Watanabe, Yoshimi Yamashita, Akifumi Kasamatsu (NICT) ED2019-105 MW2019-139 |
Compound semiconductor electron devices such as GaN-based high electron mobility transistors (HEMTs) have been expected ... [more] | ED2019-105 MW2019-139 pp.59-64 |
| ED, THz [detail] | 2019-12-23 16:45 |
Miyagi | GaInSb n-Channel HEMTs Using Strained-Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer Koki Osawa, Takuya Iwaki, Yuki Endoh, Mizuho Hiraoka, Naoyuki Kishimoto, Takuya Hayashi (TUS), Issei Watanabe (NICT/TUS), Yoshimi Yamashita, Shinsuke Hara, Takahiro Gotow, Akifumi Kasamatsu (NICT), Akira Endoh, Hiroki Fujishiro (TUS) ED2019-83 |
We succeeded in fabricating GaInSb n-channel HEMTs for the first time in the world and measured their characteristics. W... [more] | ED2019-83 pp.29-32 |
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| ED, THz | 2018-12-18 09:00 |
Miyagi | RIEC, Tohoku Univ. | [Invited Talk]
High-Speed Performance of InP-, Sb- and GaN-based HEMTs Akira Endoh, Issei Watanabe, Yoshimi Yamashita, Akifumi Kasamatsu (NICT), Hiroki Fujishiro (Tokyo Univ. of Science), Takashi Mimura (NICT) ED2018-62 |
We have fabricated nanometer-scale InP-, Sb- and GaN-based HEMTs by using electron beam lithography and measured their c... [more] | ED2018-62 pp.35-38 |
| DC | 2018-02-20 15:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Investigation of a Measurement Method of Characteristic Variations in the FPGA Considering an LUT Structure Kouhei Satou, Yukiya Miura (Tokyo Metropolitan Univ.) DC2017-86 |
FPGAs (Field Programmable Gate Arrays) are integrated circuits that can implement arbitrary logic functions by reconfigu... [more] | DC2017-86 pp.55-60 |
| ED, THz | 2017-12-19 09:40 |
Miyagi | RIEC, Tohoku Univ | Cryogenic DC and RF Characteristics of InGaAs/InAs/InGaAs Composite Channel HEMTs Akira Endoh, Issei Watanabe, Akifumi Kasamatsu (NICT), Takashi Mimura (NICT/Fujitsu Labs.) ED2017-82 |
We fabricated In0.7Ga0.3As/InAs/In0.7Ga0.3As and In0.7Ga0.3As channel HEMTs and measured their DC and RF characteristics... [more] | ED2017-82 pp.37-40 |
| DC | 2017-02-21 16:10 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Considerations on Characteristics of Ring Oscillators Implemented in FPGA Kouhei Satou, Yukiya Miura (Tokyo Metropolitan Univ.) DC2016-82 |
FPGAs (Field Programmalbe Gate Arrays) are integrated circuits that can be implemented arbitrary logic functions by reco... [more] | DC2016-82 pp.45-52 |
| ED | 2016-12-19 14:40 |
Miyagi | RIEC, Tohoku Univ | Effect of Drain-Side Recess Length on DC and RF Characteristics of Cryogenic InP HEMTs Akira Endoh, Issei Watanabe, Akifumi Kasamatsu (NICT), Tsuyoshi Takahashi, Shoichi Shiba, Yasuhiro Nakasha, Taisuke Iwai (Fujitsu Labs.), Takashi Mimura (Fujitsu Labs./NICT) ED2016-81 |
We measured the DC and RF characteristics of InP-based 75-nm-gate In0.52Al0.48As/In0.63Ga0.37As HEMTs with various drain... [more] | ED2016-81 pp.7-12 |
| EE | 2016-11-29 11:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Oscillation Frequency and Oscillation Conditions Analysis of Gate Driver Using Single LC Oscillator Kento Goto, Naoyuki Ishibashi (Nagasaki Univ.), Masahiko Hirokawa (TDK), Akihiko Katsuki (Nagasaki Univ.) EE2016-44 |
We analyzed frequency conditions and amplitude conditions in gate driver using single LC oscillator for development of p... [more] | EE2016-44 pp.81-86 |
| ED | 2015-12-21 13:45 |
Miyagi | RIEC, Tohoku Univ | Effect of Temperature on DC and RF Characteristics of Cryogenic InP HEMTs Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe, Akifumi Kasamatsu (NICT), Tsuyoshi Takahashi, Shoichi Shiba, Yasuhiro Nakasha, Taisuke Iwai (Fujitsu Labs.), Takashi Mimura (Fujitsu Labs./NICT) ED2015-92 |
We measured the DC and RF characteristics of InP-based 75-nm-gate In0.52Al0.48As/In0.63Ga0.37As HEMTs at 300, 220, 150, ... [more] | ED2015-92 pp.7-11 |
| MW | 2014-12-19 09:50 |
Tokyo | Aoyama Gakuin Univ. Aoyama Campus | Study of matched ring oscillators Shunsuke Tanimori, Kyoya Takano, Kosuke Katayama, Shuhei Amakawa, Takeshi Yoshida, Minoru Fujishima (Hiroshima Univ.) MW2014-168 |
This paper discusses a design technique to find theoretically optimized topology taking advantage of full capacity of CM... [more] | MW2014-168 pp.109-114 |
| ICD, CPSY | 2014-12-02 14:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Measurements and Evaluations of Aging Degradation Caused by Plasma Induced Damage in 65 nm Process Ryo Kishida, Azusa Oshima, Kazutoshi Kobayashi (Kyoto Inst. Tech.) ICD2014-106 CPSY2014-118 |
Degradations of reliability caused by plasma induced damage (PID) have become a significant concern with miniaturizing a... [more] | ICD2014-106 CPSY2014-118 pp.123-128 |
| ICD, SDM | 2014-08-05 14:55 |
Hokkaido | Hokkaido Univ., Multimedia Education Bldg. | Initial Frequency Degradation on Ring Oscillators in 65-nm SOTB Process Caused by Plasma-Induced Damage Azusa Oshima, Ryo Kishida, Michitarou Yabuuchi, Kazutoshi Kobayashi (KIT) SDM2014-79 ICD2014-48 |
Reliability issues, such as plasma-induced damage (PID) and Bias Temperature Instability (BTI), become dominant on inte... [more] |
SDM2014-79 ICD2014-48 pp.93-98 |
| VLD, DC, IPSJ-SLDM, CPSY, RECONF, ICD, CPM (Joint) [detail] |
2013-11-28 13:20 |
Kagoshima | Evaluations of Variations on Ring Oscillators from Plasma Induced Damage in Bulk and SOTB Processes Ryo Kishida, Michitarou Yabuuchi, Azusa Oshima, Kazutoshi Kobayashi (Kyoto Inst. of Tech.) VLD2013-83 DC2013-49 |
A degradation of reliability caused by plasma induced damage has become a significant concern with miniaturizing a devic... [more] | VLD2013-83 DC2013-49 pp.159-164 |
|
| LQE, CPM, EMD, OPE, R | 2012-08-23 10:00 |
Miyagi | Tohoku Univ. | Physical-random number generation using laser diode's noise characteristics
-- Consideration about the influence of laser diode's oscillation frequency stabilization -- Takahiro Saito, Genichi Furukawa, Hideaki Arai, Takashi Sato, Shuichi Sakamoto, Masashi Ohkawa (Niigata Univ.) R2012-21 EMD2012-27 CPM2012-52 OPE2012-59 LQE2012-25 |
The frequency of a semiconductor laser fluctuates around its center optical frequency, owing to a refractive index varia... [more] | R2012-21 EMD2012-27 CPM2012-52 OPE2012-59 LQE2012-25 pp.5-8 |
| CAS, NLP | 2009-09-25 09:00 |
Hiroshima | Hiroshima Univ. Higashi Senda Campus | Analysis of Process Variations by using Ring Oscillator Akihiro Kaya, Koh Johguchi, Hans Juergen Mattausch, Tetsushi Koide (Hiroshima Univ.) CAS2009-36 NLP2009-72 |
Process variations are rapidly increasing as the transistor size is scaled down. Therefore, the negative effects of the ... [more] | CAS2009-36 NLP2009-72 pp.71-76 |
| LQE | 2009-05-22 14:20 |
Toyama | Kanazawa Univ. | Oscillation frequency stabilization of a semiconductor laser using the Faraday effect
-- Consideration about the temperature fluctuation of our experimental setup -- Hideaki Arai, Shinya Maehara, Akira Sato, Hideyuki Kuwabara, Takashi Sato, Masashi Ohkawa (Niigata Univ.) LQE2009-12 |
Recently, the compact and highly coherent laser light source is required to be developed for the use in the laser interf... [more] | LQE2009-12 pp.59-63 |
| MW, ED | 2009-01-15 14:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg | High-frequency and low-noise performances of InP-based HEMTs for millimeter-wave monolithic integrated circuits Issei Watanabe, Akira Endoh (National Inst. of Info.&Com. Tech.), Takashi Mimura (National Inst. of Info.&Com. Tech/Fujitsu Lab. Limited,), Toshiaki Matsui (National Inst. of Info.&Com. Tech.) ED2008-214 MW2008-179 |
InP-based high electron mobility transistors (HEMTs) are the most promising devices not only for future high-speed and h... [more] | ED2008-214 MW2008-179 pp.95-99 |
| LQE, CPM, EMD, OPE | 2008-08-29 11:20 |
Miyagi | Touhoku Univ. | Frequency stabilization of semiconductor lasers for onboard interferometers using both Rb-saturated absorption profiles and double-optical feedback systems Kenji Nakano, Shinya Maehara, Ayumi Sato, Kohei Doi, Takashi Sato, Masashi Ohkawa (Graduate School of Science and Technology Niigata Univ.), Seiji Kawamura (NAOJ) EMD2008-50 CPM2008-65 OPE2008-80 LQE2008-49 |
We expect that semiconductor lasers are useful for precise interferometric systems employed in artificial satellites, by... [more] | EMD2008-50 CPM2008-65 OPE2008-80 LQE2008-49 pp.93-98 |
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