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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2014-11-07 11:15 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Quasi-Ballistic Transport Parameters in Si Double-Gate MOSFETs Extracted Using Monte Carlo Method Hideaki Tsuchiya, Ryoma Ishida (Kobe Univ.), Yoshinari Kamakura, Nobuya Mori (Osaka Univ.), Shigeyasu Uno (Ritsumeikan Univ.), Matsuto Ogawa (Kobe Univ.) SDM2014-105 |
Recently, we have developed a Monte Carlo simulator for accurately extracting quasi-ballistic transport parameters in MO... [more] |
SDM2014-105 pp.53-58 |
SDM |
2013-11-15 10:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Analytic Compact Model of Ballistic and Quasi-ballistic Cylindrical Gate-All-Around MOSFET Incorporating Drain-Induced Barrier Lowering Effect He Cheng (Nagoya Univ.), Shigeyasu Uno (Ritsumeikan Univ.), Kazuo Nakazato (Nagoya Univ.) SDM2013-107 |
We propose an analytic compact model for ballistic and quasi-ballistic GAA-MOSFET with cylindrical cross section incorpo... [more] |
SDM2013-107 pp.43-48 |
SDM |
2012-11-16 14:55 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
ANALYTIC COMPACT MODEL of BALLISTIC and QUASI-BALLISTIC CYLINDRICAL GATE-ALL-AROUND MOSFET INCLUDING TWO SUBBANDS for CIRCUIT SIMULATION He Cheng (Nagoya Univ.), Shigeyasu Uno (Ritsumeikan Univ.), Tatsuhiro Numata, Kazuo Nakazato (Nagoya Univ.) SDM2012-112 |
We propose an analytic compact model for quasi-ballistic GAA-MOSFET with cylindrical cross section by using perturbation... [more] |
SDM2012-112 pp.69-73 |
SDM |
2010-06-22 09:30 |
Tokyo |
An401・402 Inst. Indus. Sci., The Univ. of Tokyo |
A Compact Modeling of Si Nanowire MOSFETs
-- Ballistic and Quasi-Ballistic Transport -- Kenji Natori (Tokyo Inst. of Tech.) SDM2010-33 |
A compact model of ballistic Si nanowire MOSFET is disclosed and the device characteristics are discussed. Then a carrie... [more] |
SDM2010-33 pp.1-4 |
SDM, VLD |
2007-10-30 10:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Comparative Study on Drive Current of non-Si n-Channel MOSFETs based on Quantum-Corrected Monte Calro Simulation Takashi Mori, Yuusuke Azuma, Hideaki Tsuchiya (Kobe Univ.) VLD2007-51 SDM2007-195 |
A variety of new channel materials have been intensively studied to achieve a continuous enhancement in drive current of... [more] |
VLD2007-51 SDM2007-195 pp.5-10 |
SDM, VLD |
2006-09-26 15:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
To be announced Hideaki Tsuchiya, Kazuya Fujii, Takashi Mori, Tanroku Miyoshi (Kobe Univ.) |
Quasi-ballistic transport is one of the technology boosters for drive current enhancement of Si-MOSFETs. In this paper, ... [more] |
VLD2006-47 SDM2006-168 pp.49-54 |
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