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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2014-11-07
11:15
Tokyo Kikai-Shinko-Kaikan Bldg. Quasi-Ballistic Transport Parameters in Si Double-Gate MOSFETs Extracted Using Monte Carlo Method
Hideaki Tsuchiya, Ryoma Ishida (Kobe Univ.), Yoshinari Kamakura, Nobuya Mori (Osaka Univ.), Shigeyasu Uno (Ritsumeikan Univ.), Matsuto Ogawa (Kobe Univ.) SDM2014-105
Recently, we have developed a Monte Carlo simulator for accurately extracting quasi-ballistic transport parameters in MO... [more] SDM2014-105
pp.53-58
SDM 2013-11-15
10:25
Tokyo Kikai-Shinko-Kaikan Bldg. Analytic Compact Model of Ballistic and Quasi-ballistic Cylindrical Gate-All-Around MOSFET Incorporating Drain-Induced Barrier Lowering Effect
He Cheng (Nagoya Univ.), Shigeyasu Uno (Ritsumeikan Univ.), Kazuo Nakazato (Nagoya Univ.) SDM2013-107
We propose an analytic compact model for ballistic and quasi-ballistic GAA-MOSFET with cylindrical cross section incorpo... [more] SDM2013-107
pp.43-48
SDM 2012-11-16
14:55
Tokyo Kikai-Shinko-Kaikan Bldg ANALYTIC COMPACT MODEL of BALLISTIC and QUASI-BALLISTIC CYLINDRICAL GATE-ALL-AROUND MOSFET INCLUDING TWO SUBBANDS for CIRCUIT SIMULATION
He Cheng (Nagoya Univ.), Shigeyasu Uno (Ritsumeikan Univ.), Tatsuhiro Numata, Kazuo Nakazato (Nagoya Univ.) SDM2012-112
We propose an analytic compact model for quasi-ballistic GAA-MOSFET with cylindrical cross section by using perturbation... [more] SDM2012-112
pp.69-73
SDM 2010-06-22
09:30
Tokyo An401・402 Inst. Indus. Sci., The Univ. of Tokyo A Compact Modeling of Si Nanowire MOSFETs -- Ballistic and Quasi-Ballistic Transport --
Kenji Natori (Tokyo Inst. of Tech.) SDM2010-33
A compact model of ballistic Si nanowire MOSFET is disclosed and the device characteristics are discussed. Then a carrie... [more] SDM2010-33
pp.1-4
SDM, VLD 2007-10-30
10:25
Tokyo Kikai-Shinko-Kaikan Bldg. Comparative Study on Drive Current of non-Si n-Channel MOSFETs based on Quantum-Corrected Monte Calro Simulation
Takashi Mori, Yuusuke Azuma, Hideaki Tsuchiya (Kobe Univ.) VLD2007-51 SDM2007-195
A variety of new channel materials have been intensively studied to achieve a continuous enhancement in drive current of... [more] VLD2007-51 SDM2007-195
pp.5-10
SDM, VLD 2006-09-26
15:00
Tokyo Kikai-Shinko-Kaikan Bldg. To be announced
Hideaki Tsuchiya, Kazuya Fujii, Takashi Mori, Tanroku Miyoshi (Kobe Univ.)
Quasi-ballistic transport is one of the technology boosters for drive current enhancement of Si-MOSFETs. In this paper, ... [more] VLD2006-47 SDM2006-168
pp.49-54
 Results 1 - 6 of 6  /   
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