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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED, MWPTHz |
2022-12-19 16:45 |
Miyagi |
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Evaluation of InP-HEMTs with In0.8Ga0.2As/InAs composite channel for terahertz applications Taro Sasaki, Takuya Tsutsumi, Hiroki Sugiyama, Fumito Nakajima (NTT) ED2022-77 MWPTHz2022-48 |
Terahertz ICs have been attracting much attention due to its potential use of next generation wireless communications, s... [more] |
ED2022-77 MWPTHz2022-48 pp.28-33 |
ED, THz |
2021-12-21 09:00 |
Miyagi |
(Primary: On-site, Secondary: Online) |
[Invited Talk]
InP HEMT based Tera-hertz IC Fabrication Technology for Beyond 5G/6G Application Takuya Tsutsumi, Hirosh Hamada, Hiroki Sugiyama, Teruo Jyo, Hiroyuki Takahashi, Hideaki Matsuzaki (NTT) ED2021-55 |
In this report, we focuses fabrication processes of InP-based hight-mobility transistors (InP-HEMTs) and Tera-Hertz mono... [more] |
ED2021-55 pp.34-39 |
AP, MW (Joint) |
2018-09-20 14:55 |
Tokyo |
Tokyo Tech |
300 GHz, 100 Gb/s wireless transceiver based on InP-HEMT technology Hiroshi Hamada (NTT), Takuya Fujimura, Ibrahim Abdo, Kenichi Okada (Tokyo Tech), Takuya Tsutsumi, Ho-jin Song, Hiroki Sugiyama, Hideaki Matsuzaki, Hideyuki Nosaka (NTT) MW2018-60 |
These days, wireless systems which can support the data rate of 100 Gb/s are being researched for the next generation of... [more] |
MW2018-60 pp.7-12 |
ED |
2007-11-27 14:20 |
Miyagi |
Tohoku Univ. Research Institute of Electrical Communication |
A 7.6-ps InP-HEMT pulse generator for multi-Gbps millimeter-wave communication systems Yasuhiro Nakasha, Yoichi Kawano, Toshihide Suzuki (Fujitsu), Toshihiro Ohki (Fujitsu Labs.), Tsuyoshi Takahashi, Kozo Makiyama (Fujitsu), Tatsuya Hirose (Fujitsu Labs.), Naoki Hara (Fujitsu) ED2007-189 |
Using a 0.13-um-gate-length InP-HEMT technology, we developed a simple pulse generator circuit (PG) with a logical negat... [more] |
ED2007-189 pp.11-16 |
MW, ED |
2005-01-18 14:25 |
Tokyo |
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- -, -, -, - (OKI) |
The device performances of double-recessed 0.1-µm-gate pseudomorphic InP-based high electron mobility transistors ... [more] |
ED2004-221 MW2004-228 pp.53-58 |
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