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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 11 of 11  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
EID, ITE-IDY, IEE-EDD, SID-JC, IEIJ-SSL [detail] 2024-01-25
13:15
Kyoto
(Primary: On-site, Secondary: Online)
[Poster Presentation] Reproduction of changes in membrane potential of neurons by synaptic devices using memristors
Kenta Yachida, Yoshiya Abe, Kazuki Sawai (Ryukoku Univ.), Tokiyoshi Matsuda (Kindai Univ./Ryukoku Univ.), Hidenori Kawanishi (Ryukoku Univ.), Mutsumi Kimura (Ryukoku Univ./NAIST) EID2023-4
We attempted to replicate the changes in the membrane potential of neurons using thin-film neuromorphic devices that int... [more] EID2023-4
pp.9-12
NLP, CAS 2023-10-06
09:20
Gifu Work plaza Gifu A Simulation Comparison of Chaotic Circuits Under Different Memristor SPICE Models
Yasuhiro Takahashi (Gifu Univ.) CAS2023-30 NLP2023-29
With the advent of memristor using titanium oxide thin films, that is, HP memristor, various SPICE models of HP memristo... [more] CAS2023-30 NLP2023-29
pp.1-4
MSS, CAS, SIP, VLD 2023-07-06
11:00
Hokkaido
(Primary: On-site, Secondary: Online)
Lifetime improvement of Memristor-based Hyperdimensional Computing Inference Accelerator by Error Detection and Built-in Self Repair
Tetsuro Iwasaki, Michihiro Shintani (KIT) CAS2023-5 VLD2023-5 SIP2023-21 MSS2023-5
The implementation of hyperdimensional computing in memristors is expected to realize a highly efficient inferencer for ... [more] CAS2023-5 VLD2023-5 SIP2023-21 MSS2023-5
pp.22-27
MRIS, CPM, ITE-MMS [detail] 2022-10-28
10:05
Nagano Shinshu Univ.
(Primary: On-site, Secondary: Online)
Preparation and Evaluation of Molybdenum Oxide for Memristors by Anodic Oxidation Method
Chie Nagaoka, Myo Than Htay, Yoshio Hashimoto (Shinshu Univ.) MRIS2022-14 CPM2022-45
Molybdenum oxide, which is a potent resistive switching medium of memristors, is prepared by anodic oxidation technique ... [more] MRIS2022-14 CPM2022-45
pp.33-36
ED, IEE-BMS, IEE-MSS 2022-08-18
15:20
Tokyo Kikai-Shinko-Kaikan Bldg. B3-2
(Primary: On-site, Secondary: Online)
Neuromorphic computing using photo-induced current properties in ITO/Nb:SrTiO3 junction -- For reservoir computing application --
Yutaro Yamazaki, Hiroyuki Kai, Kentaro Kinoshita (Tokyo Univ. of Sci.) ED2022-21
Recently, needs for edge computing have been increasing, and methods to reduce computational cost while maintaining high... [more] ED2022-21
pp.17-20
CPM 2021-10-27
15:30
Online Online Evaluation of memristors based on encapsulated ZnO
Tomoki Kinoshita, Myo Than Htay, Yoshio Hashimoto (Shinshu Univ) CPM2021-32
In order to improve the reproducibility of memristors, a novel device structure composed of encapsulated ZnO in porous a... [more] CPM2021-32
pp.46-50
ED, IEE-BMS, IEE-MSS 2021-08-06
15:25
Online Online Design of sensor resistance-voltage converters for gas discrimination based on feature patterns extracted by metal-oxide memristors
Takehiro Hirota, Takefumi Yoshikawa, Tatsuya Iwata (TPU) ED2021-13
In this study, we attempted to obtain the feature pattern of gas sensor transient characteristics using metal-oxide memr... [more] ED2021-13
pp.9-12
CPSY, DC, IPSJ-ARC [detail] 2019-07-25
13:55
Hokkaido Kitami Civic Hall A Study on Multiple-error Correction for Matrix-Product Computation Using Steiner Triple System
Yuki Katsu, Haruhiko Kaneko (Tokyo Tech) CPSY2019-26 DC2019-26
Improving the reliability of matrix multiplication is a very important factor for the technologies in which matrix multi... [more] CPSY2019-26 DC2019-26
pp.123-127
ICD 2018-04-19
14:55
Tokyo   [Invited Talk] Low power Deep Learning hardware using emerging analog non-volatile memory
Irina Kataeva (DENSO Corp.)
In recent years, Artificial Intelligence, Deep Learning in particular, has become a hot topic of both research and pract... [more]
CPSY, DC, IPSJ-SLDM, IPSJ-EMB, IPSJ-ARC [detail] 2018-03-08
13:55
Shimane Okinoshima Bunka-Kaikan Bldg. CPSY2017-146 DC2017-102 Resistive RAM (ReRAM) is one of the most promising memory technologies due to its property such as high density, low-pow... [more] CPSY2017-146 DC2017-102
pp.257-262
NC 2010-10-23
14:30
Fukuoka Kyushu Inst. Tech. (Kitakyushu Sci. and Res. Park) A ReRAM-based Analog Synaptic Device exhibiting Spike-Timing-Dependent Plasticity
Nobuo Akou, Tetsuya Asai (Hokkaido Univ.), Takeshi Yanagida, Tomoji Kawai (Osaka Univ.), Yoshihito Amemiya (Hokkaido Univ.) NC2010-46
We propose a STDP synaptic device that employs a resistive RAM (ReRAM). The device is a CMOS-ReRAM-hybrid circuit that c... [more] NC2010-46
pp.23-28
 Results 1 - 11 of 11  /   
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