| IEICE Technical Committee Submission System Conference Schedule |
Online Proceedings [Sign in] Tech. Rep. Archives |
All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| RCS | 2021-06-23 16:10 |
Online | Online | Proof of concept of Normally-off type local 5G base station Kazutami Arimoto (Okaya.a Prefectural Univ.), Hiroshi Nakamura, Ryuichi Sakamoto, Yuta Suzuki (Univ. of Tokyo), Hideharu Takebe (poco-apoco Networks), Noriaki Yoshikawa, Kensaku Kinosita (Cyber Creative Institute), Tomoyuki Ohya (DOCOMO Technology)  RCS2021-44 |
Using open software and software defined radio, we developed a proof-of-concept facility (PoC) for a normally-off local ... [more] | RCS2021-44 pp.91-96 |
| CPSY, DC, IPSJ-ARC [detail] | 2020-07-30 16:15 |
Online | Online | Preliminary examination of normally-off power management for local 5G base station Yuta Suzuki, Ryuichi Sakamoto, Hiroshi Nakamura (UTokyo) CPSY2020-5 DC2020-5 |
It is necessary to reduce power consumption of base stations (BSs) in local 5G network. This article proposes applying n... [more] | CPSY2020-5 DC2020-5 pp.29-35 |
| ED, MW | 2020-01-31 16:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Operation Principle and Structure of normally-off Floating Gate GaN HEMT with Injection Gate Nagumo Kenshi, Kimoto Daiki, Suwa Tomoyuki (Tohoku Univ.), Teramoto Akinobu (Hiroshima Univ.), Shirota Riichiro, Tskatani Shinichiro (NCTU), Kuroda Rihito, Sugawa Shigetoshi (Tohoku Univ.) ED2019-104 MW2019-138 |
We report a GaN HEMT (High Electron Mobility Transistor) with floating gate, that has an additional injection gate for c... [more] | ED2019-104 MW2019-138 pp.55-58 |
| CPM, LQE, ED | 2019-11-21 13:00 |
Shizuoka | Shizuoka Univ. (Hamamatsu) | Improvement of Short-Channel Effects in Normally-off GaN MOSFETs with Deep Recessed-Gate Structure Daimotsu Kato, Yosuke Kajiwara, Akira Mukai, Hiroshi Ono, Aya Shindome, Jumpei Tajima, Toshiki Hikosaka, Masahiko Kuraguchi, Shinya Nunoue (Toshiba) ED2019-39 CPM2019-58 LQE2019-82 |
We have demonstrated the suppression of SCEs in normally-off GaN MOSFETs with deep recessed-gate structure. TCAD simulat... [more] | ED2019-39 CPM2019-58 LQE2019-82 pp.29-32 |
| IPSJ-ARC, VLD, CPSY, RECONF, IPSJ-SLDM [detail] | 2018-01-18 13:50 |
Kanagawa | Raiosha, Hiyoshi Campus, Keio University | Examination of the Normally-off using the stack circuit Kenji Sakamura (OPUGS), Kazutami Arimoto, Isao Kayano, Tomoyuki Yokogawa (OPU) VLD2017-70 CPSY2017-114 RECONF2017-58 |
In the stack circuit using charge recycling, low consumption electricity such as the streaming processing movement is ef... [more] | VLD2017-70 CPSY2017-114 RECONF2017-58 pp.49-51 |
| CPSY, IPSJ-EMB, IPSJ-SLDM, DC [detail] | 2015-03-07 08:55 |
Kagoshima | Improvements and evaluation of bias circuit control for CMOS analog circuit Ryohei Hori (Ritsumeikan Univ.), Toshio Kumamoto (OSU), Masayoshi Shirahata, Takeshi Fujino (Ritsumeikan Univ.) CPSY2014-175 DC2014-101 |
The power control using Noff (Normally-off) scheme for realization low power sensor node device is gathering a lot of at... [more] | CPSY2014-175 DC2014-101 pp.77-82 |
|
| SDM | 2015-01-27 14:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Low power and high memory density STT-MRAM for embedded cache memory using advanced perpendicular MTJ integrations and asymmetric compensation techniques Kazutaka Ikegami, Hiroki Noguchi, Chikayoshi Kamata, Minoru Amano, Keiko Abe, Keiichi Kushida, Takao Ochiai, Naoharu Shimomura, Shogo Itai, Daisuke Saida, Chika Tanaka, Atsushi Kawasumi, Hiroyuki Hara, Junichi Ito, Shinobu Fujita (Toshiba) SDM2014-142 |
Due to difficulty to increase clock frequency, recent processors increase cache memory to improve performance. However, ... [more] | SDM2014-142 pp.29-32 |
| SRW | 2014-08-18 11:10 |
Kanagawa | NICT(YRP) | [Invited Talk]
Application of micro-scale energy harvesting to wireless sensor system Takakuni Douseki (Ritsumeikan Univ.) SRW2014-16 |
Micro-scale energy harvesting that utilizes ambient energy sources, such as the light, kinetic, and thermal energy sourc... [more] | SRW2014-16 pp.1-6 |
| MRIS, ITE-MMS | 2013-07-12 16:35 |
Tokyo | Chuo Univ. | Progress on STT MTJ writing Technology and the Effect on Normally-off Computing Systems Junichi Ito, Hiroaki Yoda, Shinobu Fujita, Naoharu Shimomura, Eiji Kitagawa, Keiko Abe, Kumiko Nomura, Hiroki Noguchi (Toshiba) MR2013-13 |
We propose a new processor using STT-MRAMs as cache memories. It enables “Normally-off computing”, where the processor i... [more] | MR2013-13 pp.37-41 |
| ICD, ITE-IST | 2013-07-04 16:15 |
Hokkaido | San Refre Hakodate | [Invited Talk]
Low-Voltage Non-volatile Memory Devices Technology and System Application
-- To Realize Zero Stand-by LSIs -- Masanori Hayashikoshi (Renesas Electronics) ICD2013-32 |
Non-volatile memory devices typified by Flash memory has become a technology core for all industries. In this presentati... [more] | ICD2013-32 pp.43-48 |
| ICD | 2013-04-11 10:50 |
Ibaraki | Advanced Industrial Science and Technology (AIST) | [Invited Talk]
An Inductive-Coupling Wake-Up Transceiver for Standby Power Reduction of Non-Contact Memory Card Noriyuki Miura (Kobe Univ.), Mitsuko Saito, Masao Taguchi, Tadahiro Kuroda (Keio Univ.) ICD2013-3 |
A normally-off-type inductive-coupling wake-up transceiver is developed to 1/500 the standby power consumption of non-co... [more] | ICD2013-3 pp.11-14 |
| MW, ED | 2013-01-18 13:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | GaN Gate Injection Transistor with Integrated Si Schottky Barrier Diode for High Efficient DC-DC Converters Shinji Ujita, Tatsuo Morita, Hidekazu Umeda, Yusuke Kinoshita, Satoshi Tamura, Yoshiharu Anda, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ED2012-122 MW2012-152 |
We present a novel GaN-based normally-off transistor with an integrated Si Schottky barrier diode (SBD) for low voltage ... [more] | ED2012-122 MW2012-152 pp.53-56 |
| CPM, SDM, ED | 2011-05-20 16:40 |
Aichi | Nagoya Univ. (VBL) | Current collapse in GaN-based HFETs
-- HFETs on c- and a-GaN substrate/normally-off JHFET with p-GaN gate -- Takayuki Sugiyama, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano (Nagoya Univ.), Yasuhiro Isobe, Yoshinori Oshimura, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.), Mamoru Imade, Yasuo Kitaoka, Yusuke Mori (Osaka Univ.) ED2011-34 CPM2011-41 SDM2011-47 |
We measured current collapse in AlGaN/GaN HFETs on an a-plane GaN substrate. Non polar HFETs are promising for realizing... [more] | ED2011-34 CPM2011-41 SDM2011-47 pp.175-178 |
| CPM, LQE, ED | 2010-11-12 10:00 |
Osaka | Characterization of insulated gates on GaN and AlGaN/GaN structures Yujin Hori, Naohisa Harada, Chihoko Mizue, Tamotsu Hashizume (Hokkaido Univ.) ED2010-154 CPM2010-120 LQE2010-110 |
We investigated the interface and electrical properties of insulated gates fabricated on GaN and AlGaN/GaN structures us... [more] | ED2010-154 CPM2010-120 LQE2010-110 pp.55-58 |
|
| ED, MW | 2010-01-14 15:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg | A Normally-off AlGaN/GaN HFET with High Threshold Voltage Uniformity Kazuki Ota, Kazuomi Endo, Yasuhiro Okamoto, Yuji Ando, Hironobu Miyamoto, Hidenori Shimawaki (NEC Corp.) ED2009-189 MW2009-172 |
In this paper, we successfully demonstrate a recessed gate normally-off AlGaN/GaN HFET on a silicon substrate with high ... [more] | ED2009-189 MW2009-172 pp.81-85 |
| ED, LQE, CPM | 2009-11-20 14:25 |
Tokushima | Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) | Large Current operation of GaN MOSFETs Takehiko Nomura, Hiroshi Kambayashi, Yoshihiro Satoh, Yuki Niiyama, Sadahiro Kato (Advanced Power Device Research Association) ED2009-156 CPM2009-130 LQE2009-135 |
A large current operation of GaN-based MOSFET on Si substrate is reported. To realize both low on-resistance and high br... [more] | ED2009-156 CPM2009-130 LQE2009-135 pp.133-137 |
| LQE, ED, CPM | 2008-11-28 13:30 |
Aichi | Nagoya Institute of Technology | Normally-off mode AlGaN/GaN HEMTs with p-InGaN Cap Layer Xu Li, Masahito Kurouchi, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.), Fumihiko Nakamura (POWDEC) ED2008-177 CPM2008-126 LQE2008-121 |
We have fabricated AlGaN/GaN HEMTs with a thin p-InGaN cap layer and measured I-V characteristics of the devices. For th... [more] | ED2008-177 CPM2008-126 LQE2008-121 pp.125-130 |
| SDM, ED | 2008-07-11 09:00 |
Hokkaido | Kaderu２・７ | [Invited Talk]
SiC Power Transistor and Its Application for DC/DC Converter Makoto Kitabatake (Matsushita Electric Industrial) ED2008-71 SDM2008-90 |
The SiC power transistor is demonstrated as the normally-off MOSFET with high blocking voltage of 1400V and low Ron of 6... [more] | ED2008-71 SDM2008-90 pp.165-169 |
| CPM, ED, SDM | 2008-05-16 10:50 |
Aichi | Nagoya Institute of Technology | On-resistance and Breakdown Voltage of Enhancement-Mode AlGaN/GaN Junction HFET Using p-GaN Gate Contact Ryohei Nega, Katsutoshi Mizuno, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki (Meijo Univ.) ED2008-13 CPM2008-21 SDM2008-33 |
This paper reports normally-off mode nitride-based field-effect transistor using p-type gate contact. In order to realiz... [more] | ED2008-13 CPM2008-21 SDM2008-33 pp.61-66 |
| CPM, ED, LQE | 2007-10-12 09:25 |
Fukui | Fukui Univ. | Normally-off Operation of AlGaN/GaN MIS-HFET on Non-polar (11-20) plane Masayuki Kuroda, Tetsuzo Ueda, Tsuyoshi Tanaka (MEI) ED2007-166 CPM2007-92 LQE2007-67 |
GaN-based compound semiconductors are attractive for low-loss power switching devices owing to the high breakdown field ... [more] | ED2007-166 CPM2007-92 LQE2007-67 pp.53-56 |
[Return to Top Page]