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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| AP | 2022-04-15 10:25 |
Yamagata | Yamagata Syokuryo Kaikan (Primary: On-site, Secondary: Online) |
A Study on Digital Beam Forming Using Code Division Multiplexing by Waveguide Slot Array with Switchable Slot-pairs Narihiro Nakamoto, Kazunari Kihira, Toru Fukasawa, Yoshio Inasawa (Mitsubishi Electric)  AP2022-3 |
This paper presents a novel waveguide slot array with switchable slot-pairs for digital beamforming. In the proposed ant... [more] | AP2022-3 pp.13-18 |
| AP | 2021-10-07 13:00 |
Online | Online | [Poster Presentation]
Optimization of Cross Bow-Tie Antenna Polarization Switching by PIN Diode Yuki Shigeta, Motoyuki Sato (Tohoku Univ.) AP2021-78 |
We are developing a cross bow-tie antenna with a polarization switching for a ground penetrating radar (GPR) array syste... [more] | AP2021-78 pp.47-48 |
| MW | 2017-12-19 10:30 |
Tokyo | 4.5-/4.9-GHz-Band Tunable GaN HEMT High Efficiency Power Amplifier with PIN Diode Switches. Kazuki Mashimo, Ryo Ishikawa, Kazuhiko Honjou (Univ. of Electro-Communications) MW2017-142 |
For the next generation wireless communication systems, 4.5-/4.9-GHz band tunable GaN HEMT high efficiency power amplifi... [more] | MW2017-142 pp.1-6 |
|
| SDM | 2012-12-07 10:00 |
Kyoto | Kyoto Univ. (Katsura) | Fabrication of ultrahigh-voltage SiC PiN diodes with low-on resistance Naoki Kaji, Hiroki Niwa, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2012-115 |
Designing of edge termination structure is an essential technique to realize ultrahigh-voltage SiC bipolar devices. In t... [more] | SDM2012-115 pp.1-5 |
| SDM | 2011-12-16 11:00 |
Nara | NAIST | Demonstration of 15 kV 4H-SiC PiN Diodes with Improved Junction Termination Structures Hiroki Niwa, Gan Feng, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2011-135 |
Breakdown characteristics of 4H-SiC PiN diodes with various JTE structures have been investigated. By combining two-zone... [more] | SDM2011-135 pp.17-21 |
| MW | 2011-10-21 09:25 |
Tokyo | The University of Electro-Communications | A Capacitance Compensated Two-Stage Series PIN Diode SPDT High Frequency Switch Kensaku Takahashi, Iwata Sakagami, Shingo Okamura, Xiaolong Wang, Minoru Tahara (Univ. of Toyama) MW2011-101 |
High-frequency switches can be used in wireless communication equipments where low insertion loss and high isolation are... [more] | MW2011-101 pp.83-88 |
| AP, SAT (Joint) |
2011-07-15 15:50 |
Nagano | Fac. Eng., Shinshu Univ. | Design of a multiband planar antenna for polarization switching with PIN diodes Kenta Yamaura, Yuichi Kimura, Misao Haneishi (Saitama Univ.) AP2011-47 |
This paper presents design of multiband planar antennas for polarization switching with PIN diode. This antenna consists... [more] | AP2011-47 pp.115-119 |
| AP | 2010-03-08 16:25 |
Saitama | Saitama University | A Reflectarray Antenna for Millimeter-wave Imaging Hirokazu Kamoda, Toru Iwasaki, Jun Tsumochi, Takao Kuki (NHK) AP2009-219 |
A 60-GHz band electrically steerable reflectarray antenna has been fabricated and evaluated with a view to applying it t... [more] | AP2009-219 pp.85-90 |
| MW | 2009-09-25 09:25 |
Tokyo | Univ. of Electro-Communications | 60-GHz band Electrically Steerable Reflectarray Antenna Using PIN Diode Hirokazu Kamoda, Toru Iwasaki, Jun Tsumochi, Takao Kuki (NHK) MW2009-75 |
A 60-GHz band electrically steerable reflectarray antenna has been investigated. Each reflecting element was printed on ... [more] | MW2009-75 pp.7-12 |
| LQE, CPM, EMD, OPE | 2008-08-28 16:25 |
Miyagi | Touhoku Univ. | High-speed and low-resistance fast recovery diodes using SiGe anode layers Tatsuro Miyagi, Yusuke Ida, Takahiko Suzuki, Yuzuru Narita, Fumihiko Hirose (Yamagata Univ.) EMD2008-43 CPM2008-58 OPE2008-73 LQE2008-42 |
(To be available after the conference date) [more] | EMD2008-43 CPM2008-58 OPE2008-73 LQE2008-42 pp.61-64 |
| SDM | 2007-12-14 16:20 |
Nara | Nara Institute Science and Technology | Bevel mesa combined with implanted junction termination structure for 10 kV SiC PiN diodes Toru Hiyoshi (Kyoto Univ.), Tsutomu Hori (Hitachi), Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2007-233 |
A 10 kV 4H-SiC PiN diode with an improved junction termination structure has been fabricated. A mesa structure was forme... [more] | SDM2007-233 pp.47-50 |
| CPM | 2007-08-10 11:20 |
Yamagata | Yamagata Univ. | Fast recovery pin diodes with SiGe anode layers Yusuke Ida, Shinichi Nagase, Fumihiko Hirose (Yamagata Univ) CPM2007-48 |
(To be available after the conference date) [more] | CPM2007-48 pp.65-67 |
| ED | 2007-06-16 12:00 |
Toyama | Toyama Univ. | Reverse characteristics of 4H-SiC PiN diode with Vanadium ion implanted guard-ring Shuichi Ono, Manabu Arai (NJRC) ED2007-46 |
We fabricated the 4H-SiC PiN diodes with mesa structure, and Vanadium ion implanted guard-ring. The reverse characterist... [more] | ED2007-46 pp.79-83 |
| EMCJ | 2007-01-27 10:10 |
Kagoshima | On Matching Characteristics of Microwave Absorber Using Metamaterial Based on the Concept of Autonomous Control System of Living Cell Chikara Kawamura, Youji Kotsuka (Tokai Univ.) EMCJ2006-111 |
A new configuration of microwave absorber using metamaterial based on the concept of autonomous control system of living... [more] | EMCJ2006-111 pp.75-79 |
|
| MW | 2005-12-16 14:00 |
Hiroshima | A Tri-band GaAs FET Power Amplifier Using Lumped Elements Koji Uchida, Yoichiro Takayama, Takayuki Fujita, Kazusuke Maenaka (Univ. of Hyogo) |
Tri-band GaAs FET power amplifiers with a single transistor using lumped element matching circuits are designed and fabr... [more] | MW2005-137 pp.55-60 |
|
| EMCJ | 2005-06-09 10:35 |
Hokkaido | Hokkaido University | On Matching Characteristics of Computer Controllable Meta-Material Youji Kotsuka, Shinichiro Sugiyama, Chikara Kawamura (Tokai Univ.) |
The fundamental concept of computer controllable meta-material is described. This functional material is composed of an ... [more] | EMCJ2005-21 pp.13-17 |
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