Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
EID, ITE-IDY, IEIJ-SSL, SID-JC, IEE-EDD [detail] |
2018-01-25 14:30 |
Shizuoka |
Shizuoka Univ., Hamamatsu |
Fabrication of Organic Semiconductor Thin Film on Molecular Orientation Insulating Film and Its Effect on TFT Characteristics Shigeru Okimoto, Yasufumi Iimura (Tokyo Univ. of A&T), Ryuzou Ohno (JSR) EID2017-36 |
We have focused on the control of molecular alignment of pentacene thin film for improving carrier mobility of pentacene... [more] |
EID2017-36 pp.25-28 |
EA, ASJ-H |
2017-07-21 13:40 |
Hokkaido |
Hokkaido Univ. |
[Poster Presentation]
A study on tempo estimation based on temporal variations of audio signals Yudai Kikuchi, Naofumi Aoki, Yoshinori Dobashi, Tsuyoshi Yamamoto (Hokkaido Univ.) EA2017-16 |
This paper shows two methods for estimating the tempo of music.Tempo is one of the elements used to estimate musical sim... [more] |
EA2017-16 pp.91-96 |
OME, SDM |
2017-04-20 13:00 |
Kagoshima |
Tatsugochou Shougaigakushuu Center |
Self-aligned four-terminal Cu-MIC poly-Ge TFTs fabricated at 300℃ on Glass Substare Hiroki Utsumi, Taisei Sasaki, Shunya Sekiguchi, Shoya Takeuchi, Akito Hara (Tohoku Gakuin Univ.) SDM2017-1 OME2017-1 |
Flexible devices and wearable devices are receiving more attention due to their contributions in realizing the Internet ... [more] |
SDM2017-1 OME2017-1 pp.1-4 |
EID, ITE-IDY, IEE-EDD, IEIJ-SSL, SID-JC [detail] |
2017-01-26 14:26 |
Tokushima |
Tokushima Univ. |
Gate delay evaluation in a large-sized display Chihiro Tsukii, Chang-Hoon Shim, Reiji Hattori (Kyushu Univ.) EID2016-32 |
In this study, we have extracted the gate line resistance and the parasitic capacitance per subpixel of active matrix li... [more] |
EID2016-32 pp.29-32 |
SDM, EID |
2016-12-12 16:00 |
Nara |
NAIST |
Letter Recognition of Cellar Neural Network using Thin Film Transistors Sumio Sugisaki, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) EID2016-26 SDM2016-107 |
We are developing cellular neural networks using thin film transistors. We realized the neuron consisting of eight TFTs ... [more] |
EID2016-26 SDM2016-107 pp.75-79 |
EID, SID-JC, ITE-IDY, IEIJ-SSL [detail] |
2016-07-26 10:55 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Report on SID2016 -AMD (Oxide TFTs)- Kenichi Takatori (NLT tech) EID2016-2 |
Review is reported for presentations on AMD & Oxide TFTs in SID2016. [more] |
EID2016-2 pp.5-8 |
SDM |
2016-06-29 16:40 |
Tokyo |
Campus Innovation Center Tokyo |
MoS2 film formation by RF magnetron sputtering for thin film transistors Takumi Ohashi, Kentaro Matsuura (Tokyo Tech), Seiya Ishihara, Yusuke Hibino, Naomi Sawamoto (Meiji Univ.), Kuniyuki Kakushima, Kazuo Tsutsui (Tokyo Tech), Atsushi Ogura (Meiji Univ.), Hitoshi Wakabayashi (Tokyo Tech) SDM2016-46 |
Multi-layered MoS2 has been expected as a new candidate for complementary TFT material owing to its promising characteri... [more] |
SDM2016-46 pp.75-78 |
SDM, OME |
2016-04-09 10:50 |
Okinawa |
Okinawa Prefectural Museum & Art Museum |
Device simulation analysis of carrier transport in In-Ga-Zn-O thin-film transistors
-- Influence of carrier concentration in back-channel region -- Daichi Koretomo, Tatsuya Toda (KUT), Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.), Mamoru Furuta (KUT) SDM2016-14 OME2016-14 |
The influence of high carrier concentration region in In-Ga-Zn-O (IGZO ) on the electrical properties of a bottom-gate I... [more] |
SDM2016-14 OME2016-14 pp.57-60 |
SDM, OME |
2016-04-09 11:15 |
Okinawa |
Okinawa Prefectural Museum & Art Museum |
Self-Aligned Four-Terminal Metal Double-Gate LT Ni-SPC Poly-Si TFT with High-k Gate Stack Syota Nibe, Hiroki Ohsawa, Akito Hara (Tohoku Gakuin Univ.) SDM2016-15 OME2016-15 |
Self-aligned four-terminal (4T) metal double-gate (MeDG) low-temperature (LT) polycrystalline-silicon (poly-Si) thin fil... [more] |
SDM2016-15 OME2016-15 pp.61-65 |
EA, SP, SIP |
2016-03-29 09:00 |
Oita |
Beppu International Convention Center B-ConPlaza |
[Poster Presentation]
Amplitude limiters based on phase optimization Akira Kakitani, Daisuke Saito, Yasuhiro Kosugi, Nobuaki Minematsu (UTokyo) EA2015-111 SIP2015-160 SP2015-139 |
In order to reduce the peak value of source waveforms without quality degradation, a novel method is proposed. In this m... [more] |
EA2015-111 SIP2015-160 SP2015-139 pp.249-254 |
SDM |
2016-01-28 10:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Carrier Transport Analysis of High-Performance Poly-Si Nanowire Transistor Fabricated by Advanced SPC with Record-High Electron Mobility Minoru Oda, Kiwamu Sakuma, Yuuichi Kamimuta, Masumi Saitoh (Toshiba Corp.) SDM2015-121 |
High-performance poly-Si nanowire transistors were fabricated by Advanced SPC process, in which the process of forming a... [more] |
SDM2015-121 pp.5-8 |
EID, SDM |
2015-12-14 15:45 |
Kyoto |
Ryukoku University, Avanti Kyoto Hall |
Research and development of Artificial Retina using thin film transistors
-- in vitro experiment using TFT -- Shota Haruki, Keisuke Tomioka, Tokiyoshi Matsuda, Mutsumi Kimura (Ryudai) EID2015-22 SDM2015-105 |
We are executing the research and development of artificial retina using a thin film transistor. In this presentation, w... [more] |
EID2015-22 SDM2015-105 pp.57-60 |
SDM |
2015-10-30 13:00 |
Miyagi |
Niche, Tohoku Univ. |
[Invited Talk]
Materials and process technologies for large-area sheet-type display Yoshihide Fujisaki (NHK) SDM2015-79 |
Flexible organic light-emitting diode display (OLED) displays using a plastic substrate attract much attentions due to i... [more] |
SDM2015-79 pp.45-48 |
HIP |
2015-09-28 16:20 |
Kyoto |
Kyoto Terrsa |
[Invited Talk]
The Role of Eye Movement in New Psychotherapy Yoshikazu Fukui (Konan Univ.) HIP2015-77 |
(To be available after the conference date) [more] |
HIP2015-77 pp.29-30 |
CPM, OPE, LQE, R, EMD |
2015-08-27 10:35 |
Aomori |
Aomori-Bussankan-Asupamu |
Elecrically Stable IGZO Thin Film Transistors using Ionic-Liquid Gate Dielectric Hiromi Okada, Mami Fujii, Yasuaki Ishikawa (NAIST), Kazumoto Miwa (CRIEPI), Yukiharu Uraoka (NAIST), Shimpei Ono (CRIEPI) R2015-23 EMD2015-31 CPM2015-47 OPE2015-62 LQE2015-31 |
Amorphous-InGaZnO(a-IGZO) thin-film transistors (TFTs) have good characteristics such as low leakage current, high field... [more] |
R2015-23 EMD2015-31 CPM2015-47 OPE2015-62 LQE2015-31 pp.5-8 |
EID, SID-JC, ITE-IDY, IEIJ-SSL [detail] |
2015-07-28 16:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Report on SID 2015: AMD Tokiyoshi Matsuda (Ryukoku Univ.) EID2015-4 |
Display Week 2015 (SID’15) was held from May 31 to June 5, 2015 in San Jose, USA. Here, outstanding presentations in Ses... [more] |
EID2015-4 pp.37-40 |
OME, SDM |
2015-04-29 17:05 |
Okinawa |
Oh-hama Nobumoto Memorial Hall |
Effect of fluorine in In-Ga-Zn-O on defect passivartion and reliability of thin-film transistors Mamoru Furuta, Jingxin Jiang, Gengo Tatsuoka, Dapeng Wang (Kochi Univ. of Tech.) SDM2015-8 OME2015-8 |
Effets of fluorine in In-Ga-Zn-O on defect passivation and reliability improvement of thin-film transistor have been inv... [more] |
SDM2015-8 OME2015-8 pp.31-34 |
SDM, EID |
2014-12-12 13:30 |
Kyoto |
Kyoto University |
Low-Temperature CLC Poly-Si TFTs with Sputtered HfO2 Gate Dielectric Layer Tatsuya Meguro, Akito Hara (Tohoku Gakuin Univ.) EID2014-23 SDM2014-118 |
To achieve high performance low-temperature (LT) polycrystalline-silicon (poly-Si) thin-film transistors (TFTs), high-k ... [more] |
EID2014-23 SDM2014-118 pp.51-54 |
SDM, EID |
2014-12-12 13:45 |
Kyoto |
Kyoto University |
Characteristic comparison of hybrid-type temperature sensors using poly-Si TFTs Katsuya Kito, Hisashi Hayashi, Shuhei Kitajima, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) EID2014-24 SDM2014-119 |
We are executing research and development of temperature sensors using temperature dependence of off-current of poly-Si ... [more] |
EID2014-24 SDM2014-119 pp.55-59 |
SDM, EID |
2014-12-12 14:00 |
Kyoto |
Kyoto University |
Characterization of Synchronous and Asynchronous Circuits using poly-Si TFTs Yosuke Nagase (Ryukoku Univ.), Tokiyoshi Matsuda, Mutsumi Kimura (Osaka Univ.), Taketoshi Matsumoto, Hikaru Kobayashi (Ryukoku Univ.) EID2014-25 SDM2014-120 |
We have evaluated multiple-input NAND circuits using polycrystalline silicon thin-film transistors and found that the ou... [more] |
EID2014-25 SDM2014-120 pp.61-65 |