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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SANE | 2013-12-03 12:05 |
Overseas | VAST/VNSC(2nd Dec.) & Melia Hotel (3rd Dec), Hanoi, Vietnam | Development of the X-band High Speed Downlink Transmitter for Nano Satellite Tomoya Fukami, Hiromi Watanabe (The Univ. of Tokyo), Atsushi Tomiki (JAXA), Naohiko Iwakiri (The Univ. of Tokyo), Hirobumi Saito (JAXA), Shinichi Nakasuka (Tokyo Univ.)  SANE2013-102 |
Recently small satellites start playing important roles in earth observation missions. It, however, is true that small s... [more] | SANE2013-102 pp.179-184 |
| SANE | 2013-04-25 13:00 |
Nagano | Usuda Deep Space Center, JAXA | Evaluation of the X-band High Speed Downlink Transmitter with GaN-HEMT amplifier for Nano Satellite Tomoya Fukami, Hiromi Watanabe (Univ. of Tokyo), Atsushi Tomiki (JAXA), Naohiko Iwakiri (Univ. of Tokyo), Hirobumi Saito (JAXA), Shinichi Nakasuka (Univ. of Tokyo) SANE2013-1 |
Recently small satellites start playing important roles in earth observation missions. It, however, is true that small s... [more] | SANE2013-1 pp.1-6 |
| SANE | 2012-10-10 12:00 |
Overseas | The SONGDO CONVENSIA, Incheon Korea | Recent R&D status of High Speed Data Transmission System for Satellite in JAXA Tomhiro Aaraki, Kazuya Inaoka, Yoshiyuki Tashima, Masaaki Shimada (JAXA) SANE2012-82 |
Corresponding to the need to increase the data rate of sensors on Earth observation satellites, the Japan Aerospace Expl... [more] | SANE2012-82 pp.147-151 |
| SANE | 2012-10-11 14:20 |
Overseas | The SONGDO CONVENSIA, Incheon Korea | Preliminary Design of X-band High Efficiency Onboard Solid State Power Amplifier for Deep Space Missions Using GaN HEMT Yuta Kobayashi, Atsushi Tomiki, Shinichiro Narita, Shigeo Kawasaki (JAXA) SANE2012-74 |
One of the most indispensable impacts on onboard power consumption is generally caused by a transmission power amplifier... [more] | SANE2012-74 pp.101-105 |
| ED, MW | 2012-01-12 16:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg | X-band High Gain and High Efficiency Compact Power Amplifiers with 30W Output Power Osamu Moriya, Kenta Kuroda, Keiichi Matsushita, Tomohide Soejima, Kazutaka Takagi, Shinji Takatsuka (TOSHIBA) ED2011-140 MW2011-163 |
A Small Packaged Power Amplifier(PA) is developed at X-band. This amplifier has high gain by 2-stage amplifiers into 1-s... [more] | ED2011-140 MW2011-163 pp.117-120 |
| ED, MW | 2012-01-12 16:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg | High Power X-band 200W AlGaN/GaN HEMT Makoto Nishihara, Takashi Yamamoto (SEDI), Shinya Mizuno, Seigo Sano (SEI), Yuichi Hasegawa (SEDI) ED2011-141 MW2011-164 |
A 200 Watts GaN high electron mobility transistor (HEMT) has been developed for X-band applications. The device consists... [more] | ED2011-141 MW2011-164 pp.121-123 |
| MW | 2011-10-20 09:00 |
Tokyo | The University of Electro-Communications | X-Band 120W internally matched GaN amplifier in small package Hiroaki Maehara, Hiromitsu Uchida, Hiromitsu Utsumi, Jun Nishihara, Hiroshi Otsuka, Koji Yamanaka, Masatoshi Nakayama (Melco) MW2011-85 |
In this paper, a small package internally matched GaN HEMT high power amplifier operating at X-band is presented. Radar ... [more] | MW2011-85 pp.1-5 |
| OPE, MW, MWP, EMT, EST, IEE-EMT [detail] | 2011-07-22 16:30 |
Hokkaido | Improvement of Isolation Characteristics between Tx.-Rx. Antennas Using Wave Absorber Kodai Takahashi, Takenori Yasuzumi (Aoyama Gakuin Univ.), Naoki Sano (Yokogawa Denshikiki Co., Ltd.), Osamu Hashimoto (Aoyama Gakuin Univ.) MW2011-75 OPE2011-62 EST2011-61 MWP2011-43 |
In this paper, reduction of mutual coupling between microstrip antenna with using absorber is presented. Under condition... [more] | MW2011-75 OPE2011-62 EST2011-61 MWP2011-43 pp.251-256 |
|
| AP, SAT (Joint) |
2011-07-15 11:00 |
Nagano | Fac. Eng., Shinshu Univ. | Effects of the precipitation clouds on the propagation path of Ku-band satellite communications link in the equatorial region Yasuyuki Maekawa, Yoshiaki Shibagaki (Osaka Electro-Commun. Univ.), Toru Sato, Mamoru Yamamoto, Hiroyuki Hashiguchi (Kyoto Univ.), Shoichiro Fukao (Fukui Univ. of Tech.) AP2011-39 |
Rain attenuation statistics are obtained for both up and down links of Ku-band Superbird C, which connects the earth sta... [more] | AP2011-39 pp.69-74 |
| SANE | 2011-01-28 15:45 |
Nagasaki | Nagasaki Prefectural Art Museum | An X-Band Transmitting and Receiving Power Amplifier Unit using GaN HEMTs for Active Phased Array Antennas Yuichi Shiraishi, Ryota Suzuki, Masahiro Tanabe, Tsuyoshi Kumamoto, Yasuharu Masuda (Toshiba) SANE2010-157 |
In this report, an X-band transmitting and receiving power amplifier unit using GaN HEMTs is presented. This unit has de... [more] | SANE2010-157 pp.109-112 |
| SANE | 2010-10-27 14:20 |
Overseas | Ramada Hotel, Jeju-do, Korea | The potential of Chinese airborne X- band PolInSAR data for forest parameters estimation Chen Jiehong (CAS/Graduate Univ. of Chinese Academy of Sciences), Zhang Hong, Wang Chao (CAS), Jiang Kai (East China Research Inst. of Electronic Engineering) SANE2010-75 |
In this paper the potential of airborne single baseline high resolution X band polarimetric radar interferometry (PolInS... [more] | SANE2010-75 pp.43-46 |
| SANE | 2010-06-25 14:00 |
Ibaraki | Tsukuba Space Center (JAXA) | Development of X band Multi-mode High Speed Modulator
-- Design and Development test Result of Breadboard Model -- Kazuya Inaoka, Terumi Sunaga, Ichiro Inamori, Masashi Shirakura, Masaaki Shimada, Noboru Takata (JAXA) SANE2010-43 |
Jaxa has been developing an X band Multi-mode High speed Modulator (XMOD) to be installed on the Advanced Land Observing... [more] | SANE2010-43 pp.157-162 |
| MW | 2009-09-25 15:15 |
Tokyo | Univ. of Electro-Communications | C-band 340-W and X-band 100-W GaN Power Amplifiers with Over 50-% PAE Hisao Shigematsu, Yusuke Inoue, Akihiko Akasegawa, Satoshi Masuda, Masao Yamada, Masahito Kanamura, Toshihiro Ohki, Kozo Makiyama, Naoya Okamoto, Kenji Imanishi, Toshihide Kikkawa, Kazukiyo Joshin, Naoki Hara (Fujitsu Lab.) MW2009-86 |
In this paper, we report an X-band power amplifier with over 100-W output power using 0.25-μm GaN-HEMTs and a C-band pow... [more] | MW2009-86 pp.73-78 |
| MW | 2008-12-12 14:50 |
Toyama | Toyama-Univ. Gofuku-camp. | An X-Band GaN HEMT Power Amplifier Unit for a Active Phased Array Antenna Ryota Suzuki, Taihei Nakata, Tsuyoshi Kumamoto, Yoshiaki Satake, Kazuhiro Kanto (Toshiba Corp.) MW2008-157 |
An X-band power amplifier unit for an active phased array antenna is developed, which has 16 transmitter circuits with G... [more] | MW2008-157 pp.65-69 |
| AP, SAT (Joint) |
2008-07-24 15:15 |
Hokkaido | Hokkaido University | Study of high speed QAM modulation and demodulation system Johta Awano, Masashi Shirakura, Takashi Okamoto, Hiroshi Nagano (JAXA), Terumi Sunaga, Akira Kurita (Mitsubishi Electric Corp.) SAT2008-9 |
We have studied X-band high-speed transmission tecnology. This technology brings future generation high-speed data trans... [more] | SAT2008-9 pp.13-18 |
| MW | 2008-06-27 14:30 |
Aichi | Toyohashi Univ. of Tech. | 400W GaN Solid-State Power Amplifier for X-Band Marine Radar Systems Junji Yamagata, Masaya Sawayanagi, Hiroki Sugawara, Masanori Sudoh (JRC) MW2008-43 |
We have developed a solid-state power amplifier (SSPA) for X-band marine radar systems employing new gallium nitride hig... [more] | MW2008-43 pp.63-68 |
| ED, MW | 2008-01-16 15:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | An 87W AlGaN/GaN HEMT for X-band Pulse Operation Makoto Nishihara, Takashi Tamamoto, Kazutaka Inoue, Masahiro Nishi, Seigo Sano (Eudyna) ED2007-211 MW2007-142 |
In this paper, we report our result of a 60W AlGaN/GaN HEMT with the operating frequency in X-band. The device technolog... [more] | ED2007-211 MW2007-142 pp.29-31 |
| MW, ED | 2007-01-19 16:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Over 80W Output Power X-band AlGaN/GaN HEMT Keiichi Matsushita, Yasushi Kashiwabara, Kazutoshi Masuda, Hiroyuki Sakurai, Shinji Takatsuka, Kazutaka Takagi, Hisao Kawasaki, Yoshiharu Takada, Kunio Tsuda (Toshiba) |
AlGaN/GaN High Electron Mobility Transistors (HEMTs) were developed for X-band applications. The operating voltage and ... [more] | ED2006-238 MW2006-191 pp.209-212 |
| ED, CPM, LQE | 2006-10-05 13:00 |
Kyoto | X-band AlGaN/GaN HEMT with over 40W Output Power Yasushi Kashiwabara, Kazutoshi Masuda, Keiichi Matsushita, Hiroyuki Sakurai, Shinji Takatsuka, Kazutaka Takagi, Hisao Kawasaki, Yoshiharu Takada, Kunio Tsuda (Toshiba corp.) |
AlGaN/GaN High Electron Mobility Transistors (HEMTs) were developed for X-band applications. The operating voltage and ... [more] | ED2006-152 CPM2006-89 LQE2006-56 pp.1-5 |
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