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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| MRIS, ITE-MMS | 2016-07-08 13:50 |
Tokyo | Chuo Univ. | Preparation of Bi-layer Epitaxial Magnetic Films Consisting of L10 Ordered Alloy and Co Thin Films on MgO Substates Ryoma Ochiai, Masahiro Nakamura (Chuo Univ.), Mitsuru Ohtake (Kogakuin Univ./Chuo Univ.), Masaaki Futamoto (Chuo Univ.), Fumiyoshi Kirino (Tokyo Univ. Arts), Nobuyuki Inaba (Yamagata Univ.)  MR2016-15 |
Multilayer films consisting of hard and soft magnetic materials have been studied to investigate the possibilities for a... [more] | MR2016-15 pp.13-18 |
| MRIS, ITE-MMS | 2016-06-09 13:25 |
Miyagi | Tohoku Univ. | Compositional dependence of Cr100-xTix texture-inducing layer underlying (002) textured bcc-Cr alloy seed layer for FePt-C based heat-assisted magnetic recording media Seong-Jae Jeon, Shintaro Hinata, Shin Saito (Tohoku Univ.) MR2016-2 |
Cr100-xTix amorphous texture-inducing layers (TIL) were investigated to realize highly (002) oriented L10 FePt-C granula... [more] | MR2016-2 pp.5-9 |
| OFT, OCS, OPE (Joint) [detail] |
2016-02-19 09:00 |
Okinawa | Okinawa Univ. | High-performance Ge-on-Si Near-infrared Photodiodes Yasuhiko Ishikawa, Yuji Miyasaka, Kazuki Ito, Sho Nagatomo, Kazumi Wada (Univ. Tokyo) OCS2015-107 OFT2015-62 OPE2015-227 |
Near-infrared photodiodes for Si photonics are fabricated using Ge epitaxial layers on Si grown by ultrahigh-vacuum che... [more] |
OCS2015-107 OFT2015-62 OPE2015-227 pp.39-42(OCS), pp.39-42(OFT), pp.65-68(OPE) |
| MRIS, ITE-MMS | 2015-12-11 10:55 |
Ehime | Ehime Univ. | Formation of FePt/FePd Multilayer Films with L10 Ordered Structure Masahiro Nakamura, Ryoma Ochiai, Youhei Noguchi (Chuo Univ.), Mitsuru Ohtake (Kogakuin Univ./Chuo Univ.), Masaaki Futamoto (Chuo Univ.), Fumiyoshi Kirino (Tokyo Univ. Arts), Nobuyuki Inaba (Yamagata Univ.) MR2015-32 |
FePd, FePt single-layer, FePt/FePd bilayer, and multilayer films with L10 structure are prepared on MgO(001) single-crys... [more] | MR2015-32 pp.57-62 |
| SDM | 2015-06-19 14:55 |
Aichi | VBL, Nagoya Univ. | Effect of annealing on defects in Ge1-xSnx epitaxial layers Takanori Asano, Shigehisa Shibayama, Wakana Takeuchi, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2015-50 |
In order to control the carrier concentration in Ge1-xSnx epitaxial layer, it is important to understand and control def... [more] | SDM2015-50 pp.63-68 |
| SDM | 2015-03-02 11:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg | [Invited Talk]
Formation of Epitaxial Metal/Gemanium Contacts and Control of Electric Conduction Property at the Interface Osamu Nakatsuka, Yunsheng Deng, Akihiro Suzuki, Mitsuo Sakashita, Noriyuki Taoka, Shigeaki Zaima (Nagoya Univ.) SDM2014-165 |
We need to develop the control technology of the electronic property at metal/Ge interfaces for low-power and high-speed... [more] | SDM2014-165 pp.17-22 |
| SDM, ED | 2015-02-05 13:30 |
Hokkaido | Hokkaido Univ. | [Invited Talk]
Development of Si-based thermoelectric nanomaterial using ultrathin SiO2 film technique Yoshiaki Nakamura (Osaka Univ.) ED2014-138 SDM2014-147 |
The structure of connected nanodots (NDs) epitaxially grown on Si substrates was proposed as thermoelectric nanomaterial... [more] | ED2014-138 SDM2014-147 pp.1-5 |
| SDM | 2015-01-27 16:45 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Experimental Realization of Complementary p- and n- Tunnel FinFETs with Subthreshold Slopes of Less than 60 mV/decade and Very Low (pA/um) Off-Current on a Si CMOS Platform Yukinori Morita, Takahiro Mori, Koichi Fukuda, Wataru Mizubayashi, Shinji Migita, Takashi Matsukawa, Kazuhiko Endo, Shinichi O'uchi, Yongxun Liu, Meishoku Masahara, Hiroyuki Ota (AIST) SDM2014-146 |
Complementary (p- and n-type) tunnel FinFETs operating with subthreshold slopes (SSs) of less than 60 mV/decade and very... [more] | SDM2014-146 pp.45-48 |
| OCS, OPE, LQE | 2014-10-30 17:45 |
Nagasaki | Nagasaki Museum of History and Culture | Fabrication of membrane lasers by epitaxial growth of InP using InP-based active layer film on SiO2/Si substrate Takuro Fujii, Tomonari Sato, Koji Takeda, Koichi Hasebe, Takaaki Kakitsuka, Shinji Matsuo (NTT) OCS2014-68 OPE2014-112 LQE2014-86 |
Integration of III-V lasers on a Si substrate is the key to realizing large-scale photonic integrated circuits (PICs) us... [more] | OCS2014-68 OPE2014-112 LQE2014-86 pp.135-140 |
| SDM | 2014-06-19 11:05 |
Aichi | VBL, Nagoya Univ. | Control of Stacking Fault Structures in Ge1-xSnx Epitaxial Growth Takanori Asano (Nagoya Univ.), Noriyuki Taoka (IHP Microelectronics), Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2014-47 |
Ge or Ge1－xSnx layer with (110) surface has attracted much attentions for Ge multi-gate MOS transistors. For forming a h... [more] | SDM2014-47 pp.21-25 |
| CPM, ED, SDM | 2014-05-29 11:15 |
Aichi | Surface treatment and homoepitaxial growth on AlN substrate Yoshinobu Watanabe, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Yosuke Iwasaki (JFE Mineral) ED2014-37 CPM2014-20 SDM2014-35 |
Aluminum nitride (AlN) attracted as a substrate for not only light-emitting diodes and detectors operating in the deep-u... [more] | ED2014-37 CPM2014-20 SDM2014-35 pp.97-100 |
|
| CPM, LQE, ED | 2013-11-28 11:50 |
Osaka | Bow management of substrate for nitride semiconductor devices by internally focused laser processing
-- application to silicon substrate -- Natsuko Aota, Hideo Aida, Hidetoshi Takeda (Namiki Precision Jewel) ED2013-67 CPM2013-126 LQE2013-102 |
Bow management for heteroepitaxy of III-Nitride films on silicon substrate has been required, as substrate bow is introd... [more] | ED2013-67 CPM2013-126 LQE2013-102 pp.17-20 |
|
| ED | 2013-08-09 11:20 |
Toyama | University of Toyama | Selective area growth of InSb on Si(111) substrate by using Sb induced surface reconstruction Wang Xin, Masayuki Mori, Koichi Maezawa (Univ. of Toyama) ED2013-49 |
Recently, devices with three-dimensional structure such as nanowire field effect transistor (NW-FETs) and FinFETs has ex... [more] | ED2013-49 pp.61-65 |
| SDM, ICD | 2013-08-01 09:25 |
Ishikawa | Kanazawa University | Performance Enhancement of Tunnel Field-Effect Transistors by Synthetic Electric Field Effect Yukinori Morita, Takahiro Mori, Shinji Migita, Wataru Mizubayashi, Akihito Tanabe, Koichi Fukuda, Kazuhiko Endo, Takashi Matsukawa, Shin-ichi O'uchi, Yongxun Liu, Meishoku Masahara, Hiroyuki Ota (AIST) SDM2013-66 ICD2013-48 |
A synthetic electric field effect to enhance the performance of tunnel field-effect transistors (TFETs) is proposed. The... [more] | SDM2013-66 ICD2013-48 pp.7-12 |
| CPM | 2013-08-01 14:30 |
Hokkaido | Formation Mechanism of Cubic-SiC by Carbonization of Si Surface Yukimune Watanabe, Kiichi Kamimura (Shinshu Univ.) CPM2013-42 |
SiC materials for high-power devices and high-frequency devices are actively developed. In this study, we focus on a cub... [more] | CPM2013-42 pp.17-20 |
|
| MRIS, ITE-MMS | 2013-07-12 13:50 |
Tokyo | Chuo Univ. | Surface Flatness Control of Ferromagnetic Alloy Thin Films with L10 Ordered Structure Akira Itabashi, Mitsuru Ohtake (Chuo Univ.), Fumiyoshi Kirino (Tokyo University of the Arts), Masaaki Futamoto (Chuo Univ.) MR2013-7 |
FePd, FePt, and CoPt alloy epitaxial thin films with L10 structure are prepared on (001) single-crystal substrates of Mg... [more] | MR2013-7 pp.7-12 |
| MRIS, ITE-MMS | 2013-03-08 16:40 |
Aichi | Nagoya Univ. | Structural Characterization of 3d Ferromagnetic Transition Metal Thin Films Epitaxially Grown on (100)-Oriented Cubic Single-Crystal Substrates Mitsuru Ohtake, Masaaki Futamoto (Chuo Univ.) MR2012-51 |
Thin films of 3d ferromagnetic transition metals (Fe, Co, and Ni) and their alloys are prepared on MgO, SrTiO3, and GaAs... [more] | MR2012-51 pp.39-44 |
| OPE | 2012-12-21 15:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Differential Optical Receivers with MSM Ge Photodetectors Makoto Miura, Junichi Fujikata, Masataka Noguchi, Daisuke Okamoto (PETRA), Tsuyoshi Horikawa (AIST), Yasuhiko Arakawa (Univ. of Tokyo) OPE2012-139 |
In order to explore the photonics-electronics convergence technology integrated on silicon (Si) substrate, germanium (Ge... [more] | OPE2012-139 pp.27-31 |
| SDM, OME | 2012-04-28 10:20 |
Okinawa | Okinawa-Ken-Seinen-Kaikan Bldg. | Epitaxial Growth of Silicon Films on Porous Silicon Underlayer by Micro-Thermal-Plasma-Jet Irradiation Shohei Hayashi, Ryohei Matsubara, Yuji Fujita, Mitsuhisa Ikeda, Seiichiro Higashi (Hiroshima Univ.) SDM2012-14 OME2012-14 |
Amorphous silicon (a-Si) film on porous silicon (PS) underlayer were melted and rapid solidification was induced by micr... [more] | SDM2012-14 OME2012-14 pp.63-66 |
| MRIS, ITE-MMS | 2011-12-15 16:30 |
Ehime | Ehime Univ. | Epitaxial Growth of FePt, FePd, CoPt, and CoPd Alloy Thin Films on MgO Single-Crystal Substrates Mitsuru Ohtake, Shouhei Ouchi (Chuo University), Fumiyoshi Kirino (Tokyo National University of Fine Arts and Music), Masaaki Futamoto (Chuo University) MR2011-31 |
FePt, FePd, CoPt, and CoPd alloy epitaxial films are prepared on MgO single-crystal substrates of (001), (110), and (111... [more] | MR2011-31 pp.41-48 |
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