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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, SDM 2014-02-27
15:45
Hokkaido Hokkaido Univ. Centennial Hall Realizing topological insulating phase in the heterostructure composed of direct transition band gap semiconductors
Kyoichi Suzuki, Koji Onomitsu, Yuichi Harada, Koji Muraki (NTT) ED2013-136 SDM2013-151
We have realized a topological insulating phase in a heterostructure composed of direct transition band gap semiconducto... [more] ED2013-136 SDM2013-151
pp.25-30
SDM, ED 2009-06-24
14:00
Overseas Haeundae Grand Hotel, Busan, Korea [Invited Talk] Metrology of microscopic properties of graphene on SiC
Masao Nagase, Hiroki Hibino, Hiroyuki Kageshima, Hiroshi Yamaguchi (NTT BRL) ED2009-61 SDM2009-56
Graphene has recently attracted a lot of research interest because of its superior electric properties. Thermally grown ... [more] ED2009-61 SDM2009-56
pp.47-52
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