Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED, MWPTHz |
2022-12-20 09:30 |
Miyagi |
|
[Invited Talk]
High-Power Terahertz Source over 10 mW based on Resonant-Tunneling Diode Yasushi Koyama, Tatsuya Murao, Yuki Kitazawa, Koji Yukimasa, Tatsuro Uchida, Takeshi Yoshioka, Kokichi Fujimoto, Takahiro Sato, Jun Iba, Katsuhito Sakurai, Takeshi Ichikawa (Canon) ED2022-79 MWPTHz2022-50 |
A compact, high-power, and high-directivity surface-emitting terahertz (THz) source based on an active antenna array wit... [more] |
ED2022-79 MWPTHz2022-50 pp.38-41 |
ED |
2016-12-20 14:20 |
Miyagi |
RIEC, Tohoku Univ |
[Invited Talk]
Modeling of Resonant Tunneling Diodes and their Application to Short Distance Terahertz Wireless Communications Sebastian Diebold, Masayuki Fujita, Tadao Nagatsuma (Osaka Univ.) ED2016-95 |
We present an empirical, equivalent circuit model of a resonant tunneling diode (RTD) for operation in the terahertz fre... [more] |
ED2016-95 pp.81-86 |
ED |
2015-07-25 11:30 |
Ishikawa |
IT Business Plaza Musashi 5F |
Delta-Sigma Strain Sensor Using a Resonant Tunneling Diode Koichi Maezawa, Yuichiro Kakutani, Taishu Nakayama, Takumi Tajika, Masayuki Mori (Univ. Toyama) ED2015-46 |
A negative differential resistance (NDR) of resonant tunneling diodes (RTDs) is a basis for high frequency oscillators. ... [more] |
ED2015-46 pp.51-55 |
ED, SDM |
2014-02-28 09:00 |
Hokkaido |
Hokkaido Univ. Centennial Hall |
Fabrication of GaN/AlN Resonant Tunneling Diodes by MOVPE
-- Analysis of Nitride Quantum Well Structures -- Naruaki Itoh, Hassanet Sodabanlu, Masakazu Sugiyama, Yoshiaki Nakano (Univ. of Tokyo) ED2013-142 SDM2013-157 |
Owing to large conduction band offset of 2.1 eV, which is larger than the values for other compound semiconductor system... [more] |
ED2013-142 SDM2013-157 pp.55-59 |
ED, SDM |
2014-02-28 09:25 |
Hokkaido |
Hokkaido Univ. Centennial Hall |
Application of resonant tunneling diode oscillators to sensors Koichi Maezawa, Jie Pan, Yuichiro Kakutani, Jun Nakano, Masayuki Mori (Univ. of Toyama) ED2013-143 SDM2013-158 |
A negative differential resistance (NDR) of resonant tunneling diodes (RTDs) is a basis for high frequency oscillators. ... [more] |
ED2013-143 SDM2013-158 pp.61-66 |
ED |
2013-12-16 16:35 |
Miyagi |
Research Institute of Electrical Communication Tohoku University |
Wide-range Varactor-tuned Terahertz Oscillator Using Resonant Tunneling Diode Seiichirou Kitagawa, Safumi Suzuki, Masahiro Asada (Tokyo Inst. of Tech.) ED2013-97 |
We propose a wide-range varactor-tuned terahertz oscillator using resonant tunneling diode (RTD) and estimate the tuning... [more] |
ED2013-97 pp.41-45 |
ED |
2013-08-08 14:00 |
Toyama |
University of Toyama |
Ultrashort Pulse Generators Using Resonant Tunneling Diodes with Improved Power Performance Dongpo Wu, Katsutaro Mizumaki, Jie Pan, Masayuki Mori, Koichi Maezawa (Univ. of Toyama) ED2013-37 |
RTD pulse generators were designed and fabricated for improved power performance. 10-ps class pulse width with higher pe... [more] |
ED2013-37 pp.1-4 |
ED |
2013-08-08 14:25 |
Toyama |
University of Toyama |
Fluidic Self-Assembly for Heterogeneous Integration of High Performance Resonant Tunneling Diodes using Molten Gallium Bumps Jun Nakano, Tomoaki Shibata, Hiroki Morita, Hiroshi Sakamoto, Masayuki Mori, Koichi Maezawa (Univ. of Toyama) ED2013-38 |
Fluidic Self-Assembly (FSA) using molten metal bumps is one of the most promising Heterogeneous Integration (HI) technol... [more] |
ED2013-38 pp.5-8 |
ED |
2012-12-18 11:15 |
Miyagi |
Tohoku University |
A modeling and analysis of a resonant tunneling diode integrated with a broadband antenna toward terahertz wireless communications Kiyoto Asakawa, Mitsufumi Saito, Michihiko Suhara (Tokyo Metro. Univ.) ED2012-105 |
When we discuss deeply about system performance of terahertz wireless communication by employing resonant tunneling diod... [more] |
ED2012-105 pp.69-74 |
ED |
2012-07-27 10:20 |
Fukui |
Fukui University |
Large-signal analysis of injection locking and frequency comb properties in array oscillators consisting of resonant tunneling diodes integrated with wideband antennas Kiyoto Asakawa, Atsushi Tashiro, Mitsufumi Saito, Michihiko Suhara (Tokyo Metro. Univ.) ED2012-50 |
A THz range is a frequency region from 300GHz to 10THz and many applications are expected for wireless communications, i... [more] |
ED2012-50 pp.49-54 |
ED |
2011-07-30 11:40 |
Niigata |
Multimedia system center, Nagaoka Univ. of Tech. |
Identification of a nonlinear equivalent circuit in triple-barrier resonant tunneling diodes by using the particle swarm optimization method Kiyoto Asakawa, Yuji Kurakami, Mitsufumi Saito, Michihiko Suhara (Tokyo Met. Univ.) ED2011-52 |
A THz range is a frequency region from 300GHz to 10THz and many applications are expected for wireless communications, i... [more] |
ED2011-52 pp.73-77 |
SDM, ED |
2009-02-26 16:30 |
Hokkaido |
Hokkaido Univ. |
Ultrahigh-Speed Comparator with Resonant-Tunneling Diodes Tomohiko Ebata, Uichiro Ohmae, Kazuya Machida, Takao Waho (Sophia Univ.) ED2008-230 SDM2008-222 |
A comparator with resonant tunneling diodes in proposed to reduce the regeneration time. The proposed circuit has been a... [more] |
ED2008-230 SDM2008-222 pp.35-40 |
ED, SDM |
2008-01-31 10:15 |
Hokkaido |
|
Ultra-short pulse generators using resonant tunneling diodes and their integration with antenna on AlN ceramic substrates Koichi Maezawa (Univ. Toyama), Naoki Kamegai, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.), Hiroya Andoh (Toyota College Tech.), Kazuhiro Akamatsu, Hirofumi Nakata (Nippon Mining & Metals) ED2007-247 SDM2007-258 |
Ultra-short pulse generations were demonstrated on the two types of
resonant tunneling diode (RTD) pulse generators. T... [more] |
ED2007-247 SDM2007-258 pp.51-56 |
ED |
2007-11-27 16:30 |
Miyagi |
Tohoku Univ. Research Institute of Electrical Communication |
Generation of THz signals using nonlinear waves in semiconductor devices and circuits Koichi Narahara (Yamagata Univ.) ED2007-193 |
We discuss several topics concerning the generation and management of THz signals using nonlinear waves in semiconductor... [more] |
ED2007-193 pp.33-38 |
SDM, ED |
2007-02-01 14:45 |
Hokkaido |
|
[Invited Talk]
SiGe Quantum Effect Devices Yoshiyuki Suda, Hirotaka Maekawa, Yoshihiro Sano, Youichi Takahashi, Tadamasa Kobayashi, Hiroaki Hanafusa (TUAT) |
We are developing SiGe resonant tunneling diodes and an artificially positioned Ge dot array for light communication sys... [more] |
ED2006-243 SDM2006-231 pp.17-22 |