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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2024-01-31
13:05		 Tokyo KIT Toranomon Graduate School
(Primary: On-site, Secondary: Online)		 [Invited Talk] Polarization Engineering in AlSiO/p-type GaN MOSFETs Using AlN Interlayers Formed by Plasma-Enhanced Atomic Layer Deposition
Kenji Ito, Tetsuo Narita, Hiroko Iguchi, Shiro Iwasaki, Daigo Kikuta (Toyota Central R&D), Emi Kano, Nobuyuki Ikarashi, Kazuyoshi Tomita, Masahiro Horita, Jun Suda (Nagoya Univ.) SDM2023-75		 Polarization engineering by AlN interlayers (AlN-ILs) deposited via plasma-enhanced atomic layer deposition was demonstr... [more] SDM2023-75
pp.5-8
SDM, ED, CPM 2017-05-26
10:20		 Aichi VBL, Nagoya University Characterization of GaN epilayers grown on GaN substrates by a microwave photoconductivity decay method
Takato Asada (N.I.Tech), Yoshihito Ichikawa (NITech), Kenji Ito, Kazuyoshi Tomita, Tetsuo Narita (Toyota Central R&D Labs.), Tetsu Kachi (Nagoya Univ.), Masashi Kato (NITech) ED2017-25 CPM2017-11 SDM2017-19		  [more] ED2017-25 CPM2017-11 SDM2017-19
pp.55-58
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