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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, CPM, SDM 2018-05-24
16:15		 Aichi Toyohashi Univ. of Tech. (VBL) (Aichi) Reduction of threading dislocation density in Ge layers on Si by introducing tunnel-shaped voids
Motoki Yako (Univ. of Tokyo), Yasuhiko Ishikawa (Toyohashi Univ. of Tech.), Kazumi Wada (Massachusetts Inst. Tech.) ED2018-20 CPM2018-7 SDM2018-15		  [more] ED2018-20 CPM2018-7 SDM2018-15
pp.29-32
OFT, OCS, OPE
(Joint) [detail]		 2016-02-19
09:00		 Okinawa Okinawa Univ. (Okinawa) High-performance Ge-on-Si Near-infrared Photodiodes
Yasuhiko Ishikawa, Yuji Miyasaka, Kazuki Ito, Sho Nagatomo, Kazumi Wada (Univ. Tokyo) OCS2015-107 OFT2015-62 OPE2015-227		 Near-infrared photodiodes for Si photonics are fabricated using Ge epitaxial layers on Si grown by
ultrahigh-vacuum che... [more]		 OCS2015-107 OFT2015-62 OPE2015-227
pp.39-42(OCS), pp.39-42(OFT), pp.65-68(OPE)
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