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Committee Date Time Place Paper Title / Authors Abstract Paper #
MW, ED 2025-01-24
10:25		 Tokyo fukaya-kouminkan
(Primary: On-site, Secondary: Online)		 Study on Effects of GaN and Surface (AlGaN) traps in GaN HEMTs to Drain Voltage Dependence of Low-frequency Y-parameters using Device Simulation
Toshiyuki Oishi, Atsuhiro Kanemitsu (Saga Univ.), Ken Kudara, Yutaro Yamaguchi, Shintaro Shinjo, Koji Yamanaka (Mitsubishi Electric) ED2024-77 MW2024-163		 GaN HEMTs are popular in Nitride semiconductor devices. One of their issues is modeling of the traps existed in various ... [more] ED2024-77 MW2024-163
pp.56-59
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