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Committee Date Time Place Paper Title / Authors Abstract Paper #
MW, ED 2013-01-18
13:00		 Tokyo Kikai-Shinko-Kaikan Bldg. GaN Gate Injection Transistor with Integrated Si Schottky Barrier Diode for High Efficient DC-DC Converters
Shinji Ujita, Tatsuo Morita, Hidekazu Umeda, Yusuke Kinoshita, Satoshi Tamura, Yoshiharu Anda, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ED2012-122 MW2012-152		 We present a novel GaN-based normally-off transistor with an integrated Si Schottky barrier diode (SBD) for low voltage ... [more] ED2012-122 MW2012-152
pp.53-56
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