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Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE 2004-12-03
15:15
Tokyo Kikai-Shinko-Kaikan Bldg. 1.3 μm InAs/GaAs quantum dot lasers with AlGaAs cladding layer grown at low temperature by MOCVD
Jun Tatebayashi, Nobuaki Hatori, Mitsuru Ishida, Hiroji Ebe (Univ. of Tokyo), Hisao Sudou, Akito Kuramata (Fujitsu Lab.), Mitsuru Sugawara, Yasuhiko Arakawa (Univ. of Tokyo)
Quantum-dot lasers are recently of practical concern since quantum dots can extend the lasing wavelengths of GaAs-based ... [more] LQE2004-126
pp.45-50
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