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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| WPT | 2020-06-11 13:05 |
Online | Online | MAC protocol for wireless power transmission optimizing charged power and data latency in a presence of overlaid wireless data packets Soichiro Sasaki, Tomohiro Yoshida, Takahiro Goto, Takumi Kobayashi, Ryuji Kohno (YNU)  WPT2020-11 |
With IoT devices increasing, how to charge power becomes a major issue. To solve this, Microwave Wireless Power Transfer... [more] | WPT2020-11 pp.1-6 |
| WPT | 2019-06-11 10:30 |
Hokkaido | Hokkaido Univ. | Routing method of choicing optimal route in multi-hop relay nodes for long distance microwave wireless power transmission Tomohiro Yoshida, Syota Mizuguchi, Ryuji Kohno (YNU) WPT2019-17 |
Microwave power transmission is expected as a method of supplying power to power-limited devices such as smartphones and... [more] | WPT2019-17 pp.37-40 |
| ED, MW | 2018-01-25 15:45 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Delay Time Analysis of InAlN-MIS-HEMTs on Si Substrates Tomohiro Yoshida (SEI), Isao Makabe (NICT), Isao Makabe (SEI), Issei Watanabe, Akifumi Kasamatsu (NICT), Ken Nakata, Kazutaka Inoue (SEI) ED2017-94 MW2017-163 |
[more] | ED2017-94 MW2017-163 pp.7-10 |
| CNR, IN, MoNA (Joint) [detail] |
2017-11-16 10:00 |
Fukuoka | Room Access Information Estimation Using RSSI on Smartphone by Machine Learning Tomohiro Yoshida, Masakatsu Ogawa (Sophia Univ.) MoNA2017-15 |
We propose a room access information estimation method by machine learning using RSSI of wireless LAN from smartphone. T... [more] | MoNA2017-15 pp.1-5 |
|
| CS, OCS (Joint) |
2016-01-22 09:50 |
Kagoshima | Kagoshima University, Korimoto Campus, Inamori Auditorium | Sub-THz Photonic Frequency Conversion Using Graphene and InP-Based Transistors for Future Fully Coherent Access Network Kenta Sugawara, Gen Tamamushi, Adrian Dobroiu, Tomohiro Yoshida, Tetsuya Suemitsu, Hirokazu Fukidome, Maki Suemitsu, Ryzhii Victor, Katsumi Iwatsuki (Tohoku Univ.), Shigeru Kuwano, Jun-ichi Kani, Jun Terada (NTT), Taiichi Otsuji (Tohoku Univ.) OCS2015-95 |
The feasibility of graphene-channel field effect transistors (G-FETs) and InP based high electron mobility transistors (... [more] | OCS2015-95 pp.41-46 |
| WPT, MW | 2015-04-16 15:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Design of a 60GHz InGaAs HEMT class-F power amplifier with reactive negative feedback Kunihiko Watanabe, Yohtaro Umeda (Tokyo Univ. of Science), Tomohiro Yoshida, Tetsuya Suemitsu (Tohoku Univ.) WPT2015-4 MW2015-4 |
In this paper, InGaAs HEMT 60GHz Class-F power amplifier (PA) with reactive negative feedback is designed and simulated.... [more] | WPT2015-4 MW2015-4 pp.15-19 |
| ED | 2014-12-22 14:10 |
Miyagi | Millimeterwave-photomixing by InGaAs channel HEMT and graphene channel FETs Tetsuya Kawasaki, Tomohiro Yoshida, Kenta Sugawara, Adrian Dobroiu, Takayuki Watanabe, Hiroki Sugiyama, Hiroyuki Wakou (Tohoku Univ.), Jun-ichi Kani, Jun Terada, Shigeru Kuwano (NTT), Hiroki Ago, Kenji Kawahara (Kyushu Univ.), Katsumi Iwatsuki, Tetsuya Suemitsu, Taiichi Otsuji (Tohoku Univ.) ED2014-100 |
We experimentally investigated the photomixing function in the millimeter wave range by using InGaAs channel high electr... [more] | ED2014-100 pp.9-13 |
|
| MW | 2014-03-05 14:45 |
Ehime | Ehime University | 60-GHz-Band Class-F Amplifier with InGaAs HEMT Masashi Oyama, Toshiki Kishi, Yohtaro Umeda (Tokyo Univ. of Science), Tomohiro Yoshida, Tetsuya Suemitsu (Tohoku Univ.) MW2013-220 |
[more] | MW2013-220 pp.133-138 |
| MW, ED | 2013-01-18 14:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | AlGaN/GaN MIS-Gate HEMTs with SiCN Gate Stacks Kengo Kobayashi, Tomohiro Yoshida, Taiichi Otsuji, Ryuji Katayama, Takashi Matsuoka, Tetsuya Suemitsu (Tohoku Univ.) ED2012-126 MW2012-156 |
This paper reports AlGaN/GaN metal-insulator-semiconductor (MIS)-gate high electron mobility transistors (HEMTs) with a ... [more] | ED2012-126 MW2012-156 pp.75-78 |
| MW, ED | 2013-01-18 15:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | InGaAs HEMTs with T-gate electrodes formed by multi-layer SiCN molds Tomohiro Yoshida, Kengo Kobayashi, Taiichi Otsuji, Tetsuya Suemitsu (Tohoku Univ.) ED2012-127 MW2012-157 |
Recently, the gate lengths of HEMTs have been achieved below 0.1 $\mu$m. In general, T-gate electrodes are employed for ... [more] | ED2012-127 MW2012-157 pp.79-84 |
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