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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED 2009-06-12
11:25		 Tokyo   Effect of Epitaxial Layer Design on Drain Leakage Current for Millimeter-Wave GaN-HEMT
Atsushi Yamada, Kozo Makiyama, Toshihiro Ohki, Masahito Kanamura, Kazukiyo Joshin, Kenji Imanishi (Fujitsu and Fujitsu Labs.), Naoki Hara (Fujitsu Labs.), Toshihide Kikkawa (Fujitsu and Fujitsu Labs.) ED2009-48		 In this paper, GaN channel and AlGaN buffer layer structure in the GaN-HEMT was optimized to achieve a good balance betw... [more] ED2009-48
pp.63-67
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