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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED 2023-12-08
10:25		 Aichi WINC AICHI (Aichi) Photo-assisted Electron Emission Properties of Graphene-Oxide-Semiconductor Electron Source
Hidetaka Shimawaki (Hachinohe Inst. Technol.), Masayoshi Nagao, Katsuhisa Murakami (AIST) ED2023-49		 Planar-type electron sources based on graphene/oxide/semiconductor (GOS) structures have demonstrated excellent performa... [more] ED2023-49
pp.43-44
ED 2022-12-09
15:35		 Aichi 12/8 Nagoya University, 12/9 WINC AICHI (Aichi) Electron emission properties of planar-type electron source based on nanocrystalline silicon
Hidetaka Shimawaki (Hachinohe Inst. Technol.), Hiromasa Murata, Mashayoshi Nagao, Katsuhisa Murakami (AIST) ED2022-68		  [more] ED2022-68
pp.59-61
ED 2011-10-21
09:00		 Aomori (Aomori) Photoassisted electron emission from nanocrystalline silicon based MOS cathodes
Hidetaka Shimawaki, Yuto Yamazaki (Hachinohe Inst. Technol.), Yoichiro Neo, Hidenori Mimura (Shizuoka Univ.), Fujio Wakaya, Mikio Takai (Osaka Univ.) ED2011-66		 Effect of laser illumination on electron emission from nc-Si MOS cathodes using heavy doped p-type Si substrates has bee... [more] ED2011-66
pp.33-36
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