Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
CPM |
2019-11-07 14:20 |
Fukui |
Fukui univ. |
Study on Cu orientation control on ultra-thin TaWN film Mayumi B. Takeyama, Masaru Sato (Kitami Inst. of Technol.) CPM2019-45 |
[more] |
CPM2019-45 pp.5-8 |
CPM |
2019-11-08 10:00 |
Fukui |
Fukui univ. |
Characterization of ZrNx films deposited at room temperature by RF sputtering Masaru Sato, Mayumi B. Takeyama (Kitami Inst. of Technol.) CPM2019-49 |
[more] |
CPM2019-49 pp.27-29 |
CPM |
2016-11-19 10:00 |
Ishikawa |
|
Cu(111) preferential orientation on TaWN ternary alloy barrier Mayumi B. Takeyama, Masaru Sato (Kitami Inst. of Technol.) CPM2016-69 |
In this study, we examine that the Cu grain orientation control on the 5-nm-thick TaWN ternary alloy barrier. The strong... [more] |
CPM2016-69 pp.41-44 |
CPM |
2016-07-22 16:05 |
Ehime |
|
Stability of SiNx films deposited at low temperatures Mayumi B. Takeyama, Masaru Sato (Kitami Inst. of Technol.) CPM2016-26 |
[more] |
CPM2016-26 pp.11-13 |
SDM |
2016-01-22 13:35 |
Tokyo |
Sanjo Conference Hall, The University of Tokyo |
Characteristic of TiNx film by low temperature deposition using radical treatment Masaru Sato, Mayumi B. Takeyama, Atsushi Noya (Kitami inst. of Technol.) SDM2015-113 |
[more] |
SDM2015-113 pp.21-24 |
CPM |
2015-11-06 14:55 |
Niigata |
Machinaka Campus Nagaoka |
Characterization of SiNx films deposited at room temperature Masaru Sato, Mayumi B. Takeyama (Kitami Inst. of Technol.), Yasushi Kobayashi, Yoshihiro Nakata, Tomoji Nakamura (Fujitsu Lab.), Atsushi Noya (Kitami Inst. of Technol.) CPM2015-88 |
[more] |
CPM2015-88 pp.23-26 |
CPM |
2015-11-06 15:15 |
Niigata |
Machinaka Campus Nagaoka |
Properties of transition metal nitride deposited by combination of sputtering and radical treatment Mayumi B. Takeyama, Masaru Sato (Kitami Inst. of Technol.), Eiji Aoyagi (Tohoku Univ.), Atsushi Noya (Kitami Inst. of Technol.) CPM2015-89 |
We have proposed the low temperature deposition method of preparing transition metal nitride films by combination of spu... [more] |
CPM2015-89 pp.27-30 |
CPM |
2015-08-10 14:40 |
Aomori |
|
Low temperature deposition of SiNx films as an insulating barrier Mayumi B. Takeyama, Masaru Sato (Kitami Inst. of Technol.), Yasushi Kobayashi, Yoshihiro Nakata, Tomoji Nakamura (Fujitsu Lab.), Atsushi Noya (Kitami Inst. of Technol.) CPM2015-34 |
[more] |
CPM2015-34 pp.15-18 |
CPM |
2015-08-11 09:40 |
Aomori |
|
Low temperature deposition of HfNx film by radical reaction Masaru Sato, Mayumi B. Takeyama, Atsushi Noya (Kitami inst. of Technol.) CPM2015-40 |
We have demonstrated the preparation of a low-temperature deposited HfNx film as a diffusion barrier applicable to the C... [more] |
CPM2015-40 pp.47-50 |
CPM |
2012-10-26 17:55 |
Niigata |
|
Interfacial reaction and/or diffusion in Cu/metal/SiO2/Si system (I)
-- Diffusion behavior of Va transition metal -- Mayumi B. Takeyama, Atsushi Noya (Kitami Inst. of Technol.) CPM2012-103 |
Cu multi-level interconnects in Si-LSIs require an effective barrier metal between Cu and a field insulating layer as a ... [more] |
CPM2012-103 pp.55-60 |
CPM |
2011-10-26 16:50 |
Fukui |
Fukui Univ. |
Formation of NiSi silicide and its application to Cu contacts Mayumi B. Takeyama, Masaru Sato, Atsushi Noya (Kitami Inst. of Technol.) CPM2011-117 |
[more] |
CPM2011-117 pp.41-45 |
CPM |
2011-08-10 15:20 |
Aomori |
|
Properties of ZrBx Thin Films with Off-stoichiometry from ZrB2 Compound Mayumi B. Takeyama, Masaru Sato, Atsushi Noya (Kitami Inst. of Technol.) CPM2011-61 |
We have examined characteristics of ZrBx thin films with off-stoichiometry from the ZrB2 compound as an application as a... [more] |
CPM2011-61 pp.27-30 |
CPM |
2007-11-16 16:10 |
Niigata |
Nagaoka University of Technology |
Characterization and barrier properties of ZrB2 thin films for Cu interconnects Mayumi B. Takeyama (Kitami Inst. of Technol.), Yasuo Nakadai, Shozo Kambara (ULVAC Materials, Inc.), Masanobu Hatanaka (ULVAC, Inc.), Atsushi Noya (Kitami Inst. of Technol.) CPM2007-111 |
The extremely thin diffusion barrier deposited at low temperature is urgently required for reliable Cu
interconnects ap... [more] |
CPM2007-111 pp.35-38 |
CPM |
2007-11-16 16:35 |
Niigata |
Nagaoka University of Technology |
Suppression of interfacial reaction and/or diffusion in Cu/ZrN/field insulating film/Si system Mayumi B. Takeyama, Masaru Sato, Atsushi Noya (Kitami Inst. of Technol.) CPM2007-112 |
We have examined the nano-crystalline thin ZrN film with a nitrogen-rich composition as an extremely thin diffusion barr... [more] |
CPM2007-112 pp.39-42 |
CPM |
2006-11-09 16:10 |
Ishikawa |
Kanazawa Univ. |
Thermal stability and interface morphology in Cu/ZrN/SiOC/Si system Atsushi Noya, Masaru Sato, Mayumi B. Takeyama (Kitami Inst. of Technol.), Eiji Aoyagi (Tohoku Univ.) |
[more] |
CPM2006-119 pp.37-40 |
CPM |
2006-11-09 16:35 |
Ishikawa |
Kanazawa Univ. |
Novel PVD process of extremely-thin TiNx barrier with radical reaction for Cu interconnects Mayumi B. Takeyama, Tadayoshi Yanagita, Atsushi Noya (Kitami Inst. of Technol.) |
[more] |
CPM2006-120 pp.41-46 |
CPM |
2006-11-09 17:00 |
Ishikawa |
Kanazawa Univ. |
Barrier properties of HfNx thin films prepared by hot wire method between Cu interconnects and SiO2 or SiOC layer Masaru Sato, Mayumi B. Takeyama, Atsushi Noya (Kitami Inst. of Technol.) |
[more] |
CPM2006-121 pp.47-52 |
OCS, OFT |
2004-08-26 11:40 |
Hokkaido |
Muroran Institute of Technology |
Mechanism of Supercontinuum Spectrum Generation using Cross-Phase Modulation in a Dispersion- Flattened/Decreasing Fiber with Low Birefringence Hiroyasu Sone (Kitami Inst. of Technol.), Zhaoyang Wang, Masaaki Imai (Muroran Inst. of Technol.), Yoshinori Yokouchi, Yasuhiro Harada (Kitami Inst. of Technol.), Yuichi Suzuki (Fujitsu Network Technologies Ltd.) |
It is well known that a highly flat and broad SC spectrum is generated mainly due to self-phase modulation (SPM) in opti... [more] |
OCS2004-57 OFT2004-20 pp.31-34 |