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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 18 of 18  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM 2019-11-07
14:20
Fukui Fukui univ. Study on Cu orientation control on ultra-thin TaWN film
Mayumi B. Takeyama, Masaru Sato (Kitami Inst. of Technol.) CPM2019-45
 [more] CPM2019-45
pp.5-8
CPM 2019-11-08
10:00
Fukui Fukui univ. Characterization of ZrNx films deposited at room temperature by RF sputtering
Masaru Sato, Mayumi B. Takeyama (Kitami Inst. of Technol.) CPM2019-49
 [more] CPM2019-49
pp.27-29
CPM 2016-11-19
10:00
Ishikawa   Cu(111) preferential orientation on TaWN ternary alloy barrier
Mayumi B. Takeyama, Masaru Sato (Kitami Inst. of Technol.) CPM2016-69
In this study, we examine that the Cu grain orientation control on the 5-nm-thick TaWN ternary alloy barrier. The strong... [more] CPM2016-69
pp.41-44
CPM 2016-07-22
16:05
Ehime   Stability of SiNx films deposited at low temperatures
Mayumi B. Takeyama, Masaru Sato (Kitami Inst. of Technol.) CPM2016-26
 [more] CPM2016-26
pp.11-13
SDM 2016-01-22
13:35
Tokyo Sanjo Conference Hall, The University of Tokyo Characteristic of TiNx film by low temperature deposition using radical treatment
Masaru Sato, Mayumi B. Takeyama, Atsushi Noya (Kitami inst. of Technol.) SDM2015-113
 [more] SDM2015-113
pp.21-24
CPM 2015-11-06
14:55
Niigata Machinaka Campus Nagaoka Characterization of SiNx films deposited at room temperature
Masaru Sato, Mayumi B. Takeyama (Kitami Inst. of Technol.), Yasushi Kobayashi, Yoshihiro Nakata, Tomoji Nakamura (Fujitsu Lab.), Atsushi Noya (Kitami Inst. of Technol.) CPM2015-88
 [more] CPM2015-88
pp.23-26
CPM 2015-11-06
15:15
Niigata Machinaka Campus Nagaoka Properties of transition metal nitride deposited by combination of sputtering and radical treatment
Mayumi B. Takeyama, Masaru Sato (Kitami Inst. of Technol.), Eiji Aoyagi (Tohoku Univ.), Atsushi Noya (Kitami Inst. of Technol.) CPM2015-89
We have proposed the low temperature deposition method of preparing transition metal nitride films by combination of spu... [more] CPM2015-89
pp.27-30
CPM 2015-08-10
14:40
Aomori   Low temperature deposition of SiNx films as an insulating barrier
Mayumi B. Takeyama, Masaru Sato (Kitami Inst. of Technol.), Yasushi Kobayashi, Yoshihiro Nakata, Tomoji Nakamura (Fujitsu Lab.), Atsushi Noya (Kitami Inst. of Technol.) CPM2015-34
 [more] CPM2015-34
pp.15-18
CPM 2015-08-11
09:40
Aomori   Low temperature deposition of HfNx film by radical reaction
Masaru Sato, Mayumi B. Takeyama, Atsushi Noya (Kitami inst. of Technol.) CPM2015-40
We have demonstrated the preparation of a low-temperature deposited HfNx film as a diffusion barrier applicable to the C... [more] CPM2015-40
pp.47-50
CPM 2012-10-26
17:55
Niigata   Interfacial reaction and/or diffusion in Cu/metal/SiO2/Si system (I) -- Diffusion behavior of Va transition metal --
Mayumi B. Takeyama, Atsushi Noya (Kitami Inst. of Technol.) CPM2012-103
Cu multi-level interconnects in Si-LSIs require an effective barrier metal between Cu and a field insulating layer as a ... [more] CPM2012-103
pp.55-60
CPM 2011-10-26
16:50
Fukui Fukui Univ. Formation of NiSi silicide and its application to Cu contacts
Mayumi B. Takeyama, Masaru Sato, Atsushi Noya (Kitami Inst. of Technol.) CPM2011-117
 [more] CPM2011-117
pp.41-45
CPM 2011-08-10
15:20
Aomori   Properties of ZrBx Thin Films with Off-stoichiometry from ZrB2 Compound
Mayumi B. Takeyama, Masaru Sato, Atsushi Noya (Kitami Inst. of Technol.) CPM2011-61
We have examined characteristics of ZrBx thin films with off-stoichiometry from the ZrB2 compound as an application as a... [more] CPM2011-61
pp.27-30
CPM 2007-11-16
16:10
Niigata Nagaoka University of Technology Characterization and barrier properties of ZrB2 thin films for Cu interconnects
Mayumi B. Takeyama (Kitami Inst. of Technol.), Yasuo Nakadai, Shozo Kambara (ULVAC Materials, Inc.), Masanobu Hatanaka (ULVAC, Inc.), Atsushi Noya (Kitami Inst. of Technol.) CPM2007-111
The extremely thin diffusion barrier deposited at low temperature is urgently required for reliable Cu
interconnects ap... [more]
CPM2007-111
pp.35-38
CPM 2007-11-16
16:35
Niigata Nagaoka University of Technology Suppression of interfacial reaction and/or diffusion in Cu/ZrN/field insulating film/Si system
Mayumi B. Takeyama, Masaru Sato, Atsushi Noya (Kitami Inst. of Technol.) CPM2007-112
We have examined the nano-crystalline thin ZrN film with a nitrogen-rich composition as an extremely thin diffusion barr... [more] CPM2007-112
pp.39-42
CPM 2006-11-09
16:10
Ishikawa Kanazawa Univ. Thermal stability and interface morphology in Cu/ZrN/SiOC/Si system
Atsushi Noya, Masaru Sato, Mayumi B. Takeyama (Kitami Inst. of Technol.), Eiji Aoyagi (Tohoku Univ.)
 [more] CPM2006-119
pp.37-40
CPM 2006-11-09
16:35
Ishikawa Kanazawa Univ. Novel PVD process of extremely-thin TiNx barrier with radical reaction for Cu interconnects
Mayumi B. Takeyama, Tadayoshi Yanagita, Atsushi Noya (Kitami Inst. of Technol.)
 [more] CPM2006-120
pp.41-46
CPM 2006-11-09
17:00
Ishikawa Kanazawa Univ. Barrier properties of HfNx thin films prepared by hot wire method between Cu interconnects and SiO2 or SiOC layer
Masaru Sato, Mayumi B. Takeyama, Atsushi Noya (Kitami Inst. of Technol.)
 [more] CPM2006-121
pp.47-52
OCS, OFT 2004-08-26
11:40
Hokkaido Muroran Institute of Technology Mechanism of Supercontinuum Spectrum Generation using Cross-Phase Modulation in a Dispersion- Flattened/Decreasing Fiber with Low Birefringence
Hiroyasu Sone (Kitami Inst. of Technol.), Zhaoyang Wang, Masaaki Imai (Muroran Inst. of Technol.), Yoshinori Yokouchi, Yasuhiro Harada (Kitami Inst. of Technol.), Yuichi Suzuki (Fujitsu Network Technologies Ltd.)
It is well known that a highly flat and broad SC spectrum is generated mainly due to self-phase modulation (SPM) in opti... [more] OCS2004-57 OFT2004-20
pp.31-34
 Results 1 - 18 of 18  /   
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