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Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM, ED, LQE 2007-10-11
17:10
Fukui Fukui Univ. Deep UV Lasing of AlGaN Multiple Quantum Well Lasers and Its Anisotropc Properties of Laser and Spontaneous Edge and Surface Emissions
Hideo Kawanishi, Eiichiro Niikura (Kohgakuin Univ.) ED2007-163 CPM2007-89 LQE2007-64
AlGaN wide-gap semiconductor is promising for UV to Deep-UV laser and light emitting diodes. The AlGaN has optical aniso... [more] ED2007-163 CPM2007-89 LQE2007-64
pp.39-42
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