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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 210  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2011-12-16
11:40
Nara NAIST Selective nanoscale positioning of Co nanoparticles on Ti and SiO2 Surfaces
Satoshi Itakura (Ryukoku Univ.), Hirohumi Yamada (Kyoto Univ.), Yukiharu Uraoka (NAIST), Ichiro Yamashita (ATRL Panasonic), Shinichi Yamamoto (Ryukoku Univ.) SDM2011-137
Nowadays, research on biotechnology is progressing rapidly. The nanometer, or the size of atoms and molecules, is now th... [more] SDM2011-137
pp.29-30
RCS, NS
(Joint)
2010-07-15
13:10
Hokkaido Abashiri Public Auditorium Codebook Design for 3GPP LTE-Advanced
Hui Tong (PRDCC), Masayuki Hoshino (Panasonic), Fan Yang (Tsinghua Univ.), Ming Xu (PRDCC), Daichi Imamura (Panasonic) RCS2010-56
The authors are working on Enhanced Downlink Multiple Antenna Transmission for the 3GPP Long Term Evolution (LTE) -Advan... [more] RCS2010-56
pp.47-52
RCS, AP
(Joint)
2009-11-27
12:50
Tokyo Tokyo Inst. of Tech. Aspects in Realizing Coordinated Multi-point Transmission for 3GPP LTE-Advanced
Hui Tong (Matsushita R&D (China) Co., Ltd.), Masayuki Hoshino (Panasonic Corp.), Ming Xu, Zhi Zhang (Matsushita R&D (China) Co., Ltd.), Atsushi Sumasu, Daichi Imamura (Panasonic Corp.) RCS2009-158
The authors are working on Coordinated multi-point (CoMP) transmission technology for the 3GPP Long Term Evolution (LTE)... [more] RCS2009-158
pp.151-154
LQE, ED, CPM 2008-11-27
17:40
Aichi Nagoya Institute of Technology 270 nm-band AlGaN deep-UV LEDs fabricated on ELO-AlN template
Jun Norimatsu, Hideki Hirayama, Sachie Fujikawa, Norimichi Noguchi (RIKEN), Takayoshi Takano (Matsushita Electric Works), Kenji Tsubaki (RIKEN), Norihiko Kamata (Saitama University/JST CREST) ED2008-168 CPM2008-117 LQE2008-112
250-280 nm-band high-efficiency deep-ultraviolet (DUV) light-emitting diodes (LEDs) and laser diodes (LDs) are attractiv... [more] ED2008-168 CPM2008-117 LQE2008-112
pp.77-82
LQE, ED, CPM 2008-11-28
09:00
Aichi Nagoya Institute of Technology 280nm-band InAlGaN-based high-power deep-UV LEDs
Hideki Hirayama, Sashie Fujikawa (RIKEN), Takayoshi Takano, Kenji Tsubaki (Matsushita Electric Works Ltd.) ED2008-169 CPM2008-118 LQE2008-113
Quaternary InAlGaN alloy is attracting much attention as candidate material for realizing deep-ultraviolet (DUV) light-e... [more] ED2008-169 CPM2008-118 LQE2008-113
pp.83-88
SDM [detail] 2008-11-13
13:10
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Circuit designs of Analog Circuits in Advanced System LSIs
Shiro Dosho, Shiro Sakiyama, Takashi Morie, Kazuo Matsukawa (Matsushita Electric Co. Ltd.) SDM2008-169
 [more] SDM2008-169
pp.1-8
OME 2008-09-30
15:55
Hyogo   Fundamental Property of Poly (3-hexylthiophene) / C60 Interpenetrating Heterojunction Organic Thin-Film Solar Cells and the Effect of the Insertion of MoO3 Cathode Buffer Layer
Tetsuro Hori, Takeshi Shibata, Varutt Kittichungchit (Osaka Univ.), Xiaouhui Ju (Osaka Univ./Tianjin Univ.), Jun Sakai (Osaka Univ./MATSUSHITA ELECTRIC WORKS), Hitoshi Kubo, Akihiko Fujii, Masanori Ozaki (Osaka Univ.) OME2008-48
Improvement of photovoltaic properties of a photovoltaic cell with a hetero-junction of poly (3-hexyl- thiophene) / C60 ... [more] OME2008-48
pp.27-32
SIS, SIP, IPSJ-AVM 2008-09-26
11:15
Fukuoka Tobata Campus, Kyushu Institute of Technology An Experimental Study of Geometric Correction for Projected Images Using Projector-Camera Systems
Toru Takahashi, Norihito Numa, Takafumi Aoki (Tohoku Univ.), Satoshi Kondo (Matsushita Electric Industrial, Co. Ltd.) SIP2008-100 SIS2008-35
In this paper, we present an experimental study of geometric correction for projected images using projector-camera syst... [more] SIP2008-100 SIS2008-35
pp.59-64
MW 2008-08-28
14:20
Osaka Osaka-Univ. (Toyonaka) K-band AlGaN/GaN-based MMICs on sapphire substrates
Tomohiro Murata, Masayuki Kuroda (Matsushita), Shuichi Nagai (PBL), Masaaki Nishijima, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Hiroyuki Sakai, Tsuyoshi Tanaka (Matsushita), Ming Li (PBL) MW2008-85
We present K-band AlGaN/GaN HFET MMIC amplifiers with integrated microstrip lines on sapphire substrates. The microstrip... [more] MW2008-85
pp.37-40
MW 2008-08-29
16:00
Osaka Osaka-Univ. (Toyonaka) [Special Talk] Report of IMS2008
Toshio Ishizaki (Matsushita), Akira Tsuchiya (Kyoto Univ.), Tomohiro Murata (Matsushita), Satoshi Matsumoto (Furuno), Tadashi Kawai (Univ. Hyogo), Mitsuhiro Shimozawa (Mitsubishi Elec.) MW2008-102
IMS2008 was held in Atlanta, GA, from June 15th to 20th. The authors report the summary of presentations in MTT symposiu... [more] MW2008-102
pp.129-134
RCS 2008-08-27
13:00
Hokkaido Hokkaido University A study on feedback related resource control scheme for downlink MIMO in Evolved UTRA
Masayuki Hoshino (Matsushita Electric Industrial Co., Ltd.), Takashi Toda (Panasonic Mobile Communications R&D Lab. Co., Ltd.), Katsuhiko Hiramatsu (Matsushita Electric Industrial Co., Ltd.), Kazuyuki Miya (Panasonic Mobile Communications R&D Lab. Co., Ltd.) RCS2008-60
Multiple-Input Multiple-Output (MIMO) transmission has been investigated in order to increase data rate in the Evolved U... [more] RCS2008-60
pp.43-48
RCS 2008-08-27
13:25
Hokkaido Hokkaido University Performance improvement of Evolved UTRA uplink control channel for fast fading environments
Seigo Nakao (Matsushita Electric Industrial Co., Ltd.), Tomohumi Takata (Panasonic Mobile Communications R&D Lab. Co., Ltd.), Daichi Imamura, Katsuhiko Hiramatsu (Matsushita Electric Industrial Co., Ltd.), Kazuyuki Miya (Panasonic Mobile Communications R&D Lab. Co., Ltd.) RCS2008-61
HARQ (Hybrid Automatic Repeat Request) is employed for the 3GPP E-UTRA downlink. Each mobile terminal sends its ACK/NACK... [more] RCS2008-61
pp.49-54
ICD, SDM 2008-07-17
10:30
Tokyo Kikai-Shinko-Kaikan Bldg. A 45 nm Low-Standby-Power Embedded SRAM with Improved Immunity Against Process and Temperature Variations
Makoto Yabuuchi, Koji Nii, Yasumasa Tsukamoto, Shigeki Ohbayashi, Susumu Imaoka (Renesas Tech.), Yoshinobu Yamagami, Satoshi Ishikura, Toshio Terano, Katsuji Satomi, Hironori Akamatsu (Matsushita Elec.), Hirofumi Shinohara (Renesas Tech.) SDM2008-131 ICD2008-41
We develop 512 Kb SRAM module in 45 nm LSTP CMOS technology with the variation tolerant assist circuits against process ... [more] SDM2008-131 ICD2008-41
pp.17-22
SDM, ED 2008-07-11
09:00
Hokkaido Kaderu2・7 [Invited Talk] SiC Power Transistor and Its Application for DC/DC Converter
Makoto Kitabatake (Matsushita Electric Industrial) ED2008-71 SDM2008-90
The SiC power transistor is demonstrated as the normally-off MOSFET with high blocking voltage of 1400V and low Ron of 6... [more] ED2008-71 SDM2008-90
pp.165-169
SDM, ED 2008-07-11
10:50
Hokkaido Kaderu2・7 High Breakdown Voltage of 10400V in AlGaN/GaN HFET with AlN Passivation
Daisuke Shibata, Hisayoshi Matsuo (Matsushita Electric Industrial), Shuichi Nagai, Ming Li (Panasonic Boston Lab), Naohiro Tsurumi, Hidetoshi Ishida, Manabu Yanagihara, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Matsushita Electric Industrial) ED2008-73 SDM2008-92
We report ultra high blocking voltage AlGaN/GaN heterojunction transistors (HFETs) using thick poly-crystalline AlN (pol... [more] ED2008-73 SDM2008-92
pp.177-181
SDM, ED 2008-07-11
14:20
Hokkaido Kaderu2・7 AlGaN/GaN-based Millimeter Wave Monolithic ICs with Laser-Drilled Via-holes Through Sapphire
Tomohiro Murata, Masayuki Kuroda (Matsushita Electric Industrial), Shuichi Nagai (Panasonic Boston Lab.), Masaaki Nishijima, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Hiroyuki Sakai, Tsuyoshi Tanaka (Matsushita Electric Industrial), Ming Li (Panasonic Boston Lab.) ED2008-103 SDM2008-122
We present K-band AlGaN/GaN HFET MMIC amplifiers on sapphire substrates. Integrated AlGaN/GaN HFETs have superlattice ca... [more] ED2008-103 SDM2008-122
pp.331-335
EMCJ 2008-06-20
11:50
Hokkaido Hokkaido Univ. An Estmation of the Optimal Location of Noise Sources Using Near-Field Magnetic Distribution
Tomoya Maekawa, Hideki Iwaki, Toru Yamada, Koichi Ogawa (MEI) EMCJ2008-14
In portable equipments, noise generated from a digital circuit in the equipments is mixed into a receiver circuit, and t... [more] EMCJ2008-14
pp.41-46
IN, RCS
(Joint)
2008-05-30
16:00
Tokyo Kikai-Shinko-Kaikan Bldg. LDPC Convolutional Codes Based on Parity Check Polynomial
Yutaka Murakami, Shutai Okamura, Takaaki Kishigami, Masayuki Orihashi (Matsushita) RCS2008-13
 [more] RCS2008-13
pp.75-80
ICD, IPSJ-ARC 2008-05-14
13:45
Tokyo   Automatic Parallelization of Restricted C Programs using Pointer Analysis
Masayoshi Mase (Waseda Univ.), Daisuke Baba (Waseda Univ. / Matsushita Electric Industrial), Harumi Nagayama (Waseda Univ. / Intel), Yuta Murata, Keiji Kimura, Hironori Kasahara (Waseda Univ.)
This paper describes a restriction on pointer usage in C language for parallelism extraction by an automatic parallelizi... [more] ICD2008-30
pp.69-74
HCS, HIP 2008-05-12
- 2008-05-13
Okinawa Okinawa Industory Support Center Effect of the Task Workload on Pupil Diameter Variability
Kiyomi Sakamoto, Shoichi Aoyama, Shigeo Asahara (Panasonic), Naofumi Murata, Haruki Mizushina, Hirohiko Kaneko (Titech) HCS2008-23 HIP2008-23
 [more] HCS2008-23 HIP2008-23
pp.125-130
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