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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2006-06-22
15:05		 Hiroshima Faculty Club, Hiroshima Univ. XPS studies on barrier height at Au/ultra-thin SiO2 interface
Haruhiko Suzuki, Akira Hasegawa, Hiroshi Nohira, Takeo Hattori (Musashi inst technol), Moroyuki Yamawaki, Nobuko Suzuki (SOKENDAI), Daisuke Kobayashi, Kazuyuki Hirose (ISAS) 		As a result of ongoing scale-down of Si-MOS devices, gate SiO2 films have been thinned down to 0.8 nm. In this study, th... [more] SDM2006-63
pp.119-124
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