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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, ED 2009-06-25
09:00		 Overseas Haeundae Grand Hotel, Busan, Korea [Invited Talk] InAlGaN/AlGaN/GaN Heterosturcures Field Effect Transistors with Flat Surface and High Electron Mobility
Masanobu Hiroki, Narihiko Maeda, Takashi Kobayashi, Naoteru Shigekawa (NTT PH Labs.) ED2009-71 SDM2009-66		 We report our recent development of an InAlN barrier layer for GaN-based FETs. We fabricated a novel structure consistin... [more] ED2009-71 SDM2009-66
pp.93-98
CPM, EMD, OME 2006-06-30
14:00		 Tokyo Kikai-Shinko-Kaikan Bldg. Holographic Memory Materials Based on Stepwise Two-photon Absorption with Oligothiophenes
Yuhei Mori, Hirohisa Kanbara, Katsuhiko Hirabayashi, Takashi Kurihara (NTT PH Labs.), Masafumi Adachi, Yutaka Sasaki, Shuichi Maeda (Mitsubishi Chemical), Masaki Shimizu, Tamejiro Hiyama (Kyoto Univ.) 		Organic materials of stepwise two-photon absorption were studied for the purpose of multilayered optical data storage. O... [more] EMD2006-9 CPM2006-33 OME2006-43
pp.23-27
OPE, LQE, CPM, EMD 2005-08-25
14:35		 Hokkaido   Efficient wavelength conversion using direct-bonded QPM-LN waveguide
Yoshiki Nishida, Masaki Asobe (NTT PH Labs.), Hiroshi Miyazawa (NEL), Katsuaki Magari, Osamu Tadanaga, Tsutomu Yanagawa, Hiroyuki Suzuki (NTT PH Labs.) 		We describe the experimental results of wavelength conversion using direct-bonded QPM-LN waveguide. A 0 dB wavelength c... [more] EMD2005-41 CPM2005-69 OPE2005-49 LQE2005-29
pp.19-24
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