Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SANE |
2016-10-21 13:50 |
Osaka |
OIT UMEKITA Knowledge Center |
Drone detection using Multimode sensor module NJR4233D. Satoshi Sasaki, Toshihiko Sasahara, Hiroshi Hosaka, Ryouta Kan, Kazuaki Yoshida, Masaaki Goto, Suguru Watanabe, Yasuhiro Tsukada, Kazuo Oikawa (NJRC) SANE2016-47 |
The NJR4233D is a microwave sensor module which can be used for various uses with multiple modulation functions. This mo... [more] |
SANE2016-47 pp.41-45 |
ED, LQE, CPM |
2015-11-27 15:50 |
Osaka |
Osaka City University Media Center |
Electrical characteristics of Si/SiC junctions using surface activated bonding Tomohiro Hayashi, Jianbo Liang (Osaka City Univ.), Manabu Arai (New Japan Radio Co.), Naoteru Shigekawa (Osaka City Univ.) ED2015-90 CPM2015-125 LQE2015-122 |
[more] |
ED2015-90 CPM2015-125 LQE2015-122 pp.111-115 |
CPM, LQE, ED |
2013-11-28 13:30 |
Osaka |
|
Electrical properties of Si/SiC heterojunctions fabricated using surface-activated bonding Shota Nishida, Jianbo Liang, Masashi Morimoto, Naoteru Shigekawa (Osaka City Univ.), Manabu Arai (New Japan Radio) ED2013-68 CPM2013-127 LQE2013-103 |
The physical and electrical properties of p+-Si/n-4H-SiC heterojunctions with and without being annealed fabricated by u... [more] |
ED2013-68 CPM2013-127 LQE2013-103 pp.21-25 |
ED |
2013-10-23 10:50 |
Hokkaido |
Enreisou, Hokkaido Univ. |
Performance of electronic frequency tuning magnetron and simulation result of radar detecting capability with this magnetron Hideyuki Obata, Kuniyoshi Furumoto, Naoki Tsuji (New Japan Radio) ED2013-61 |
A technological development in the design of electronic frequency tuning pulsed magnetron has the potential to dramatica... [more] |
ED2013-61 pp.47-52 |
VLD, DC, IPSJ-SLDM, CPSY, RECONF, ICD, CPM (Joint) [detail] |
2011-11-28 16:05 |
Miyazaki |
NewWelCity Miyazaki |
CMOS Op-amp Offset Calibration Technique Using a Closed Loop Offset Amplifier and Compact Resistor String DAC Hiroyuki Morimoto, Hiroaki Goto (KIT), Hajime Fujiwara (NJR), Kazuyuki Nakamura (KIT) VLD2011-65 DC2011-41 |
This paper describes the development of a circuit system that enables the offset calibration of an op-amp circuit after ... [more] |
VLD2011-65 DC2011-41 pp.79-84 |
ED |
2011-07-29 13:30 |
Niigata |
Multimedia system center, Nagaoka Univ. of Tech. |
Effect of C and Si co-doping high resistivity GaN buffer layer on AlGaN/GaN HFETs Masayuki Fukai, Shusuke Kakizawa, Hiroshi Fushimi (New Japan Radio) ED2011-37 |
Based on Fermi level effect, we intentionally incorporated carbon into Si-doped GaN by low-temperature grown MOVPE at 95... [more] |
ED2011-37 pp.1-6 |
ED |
2011-07-29 13:55 |
Niigata |
Multimedia system center, Nagaoka Univ. of Tech. |
Control of Interface Electric Charge by MIM Gate Structure on AlGaN/GaN HFETs Yoshimichi Fukasawa, Eiji Waki, Hiroshi Fushimi (New Japan Radio) ED2011-38 |
We introduce Metal-Insulator-Metal (MIM) gate AlGaN/GaN HFETs that control the electronic charge generated on SiN/AlGaN ... [more] |
ED2011-38 pp.7-12 |
ED |
2009-10-16 10:35 |
Fukui |
|
Spurious Reduction Technology for Pulsed Magnetrons Hideyuki Obata, Kuniyoshi Furumoto, Naoki Tsuji (New Japan Radio Co., Ltd.) ED2009-126 |
Technological developments in the design of unmodulated pulsed magnetrons have resulted in a dramatic improvement in the... [more] |
ED2009-126 pp.53-57 |
ED |
2008-10-23 13:25 |
Fukuoka |
Kyushu Institute of Technology |
High-Voltage AlGaN/GaN Schottky Barrier Diodes on Si Substrate with Low-Temperature GaN Cap Layer for Edge Termination Atsushi Kamada (NJRC), Takashi Egawa (NIT) ED2008-149 |
[more] |
ED2008-149 pp.143-148 |
SDM, ED |
2008-07-09 11:40 |
Hokkaido |
Kaderu2・7 |
[Invited Talk]
AlGaN/GaN-based Electron Devices with Low-temperature GaN Cap Layer Tadayoshi Deguchi (New Japan Radio), Takashi Egawa (Nagoya Inst. of Tech.) ED2008-41 SDM2008-60 |
We review our studies on AlGaN/GaN-based electron devices with a low-temperature GaN (LT-GaN) cap layer, such as heteros... [more] |
ED2008-41 SDM2008-60 pp.9-14 |
ED |
2007-06-16 12:00 |
Toyama |
Toyama Univ. |
Reverse characteristics of 4H-SiC PiN diode with Vanadium ion implanted guard-ring Shuichi Ono, Manabu Arai (NJRC) ED2007-46 |
We fabricated the 4H-SiC PiN diodes with mesa structure, and Vanadium ion implanted guard-ring. The reverse characterist... [more] |
ED2007-46 pp.79-83 |
ED, MW |
2006-01-18 13:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
A Low-Phase-Noise 76-GHz Planar Gunn VCO Using Flip-Chip Bonding Technology Takashi Yoshida, Yoshimichi Fukasawa, Tadayoshi Deguchi, Kiyoshi Kawaguchi, Takahiro Sugiyama, Atsushi Nakagawa (New Japan Radio) |
A low-phase-noise76-GHz planar Gunn VCO using flip-chip bonding technology has been developed. The power consumption is ... [more] |
ED2005-192 MW2005-146 pp.1-5 |
ED, MW |
2006-01-19 13:20 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
AlGaN/GaN HFETs with a low-temperature GaN cap layer Tadayoshi Deguchi, Eiji Waki, Satoru Ono, Meiichi Yamashita, Atsushi Kamada, Atsushi Nakagawa (New Japan Radio), Hiroyasu Ishikawa, Takashi Egawa (Nagoya Institute of Technology) |
AlGaN/GaN heterostructure field-effect transistors (HFETs) with a highly resistive, low-temperature GaN (LT-GaN) cap lay... [more] |
ED2005-203 MW2005-157 pp.23-27 |