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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 13 of 13  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SANE 2016-10-21
13:50
Osaka OIT UMEKITA Knowledge Center Drone detection using Multimode sensor module NJR4233D.
Satoshi Sasaki, Toshihiko Sasahara, Hiroshi Hosaka, Ryouta Kan, Kazuaki Yoshida, Masaaki Goto, Suguru Watanabe, Yasuhiro Tsukada, Kazuo Oikawa (NJRC) SANE2016-47
The NJR4233D is a microwave sensor module which can be used for various uses with multiple modulation functions. This mo... [more] SANE2016-47
pp.41-45
ED, LQE, CPM 2015-11-27
15:50
Osaka Osaka City University Media Center Electrical characteristics of Si/SiC junctions using surface activated bonding
Tomohiro Hayashi, Jianbo Liang (Osaka City Univ.), Manabu Arai (New Japan Radio Co.), Naoteru Shigekawa (Osaka City Univ.) ED2015-90 CPM2015-125 LQE2015-122
 [more] ED2015-90 CPM2015-125 LQE2015-122
pp.111-115
CPM, LQE, ED 2013-11-28
13:30
Osaka   Electrical properties of Si/SiC heterojunctions fabricated using surface-activated bonding
Shota Nishida, Jianbo Liang, Masashi Morimoto, Naoteru Shigekawa (Osaka City Univ.), Manabu Arai (New Japan Radio) ED2013-68 CPM2013-127 LQE2013-103
The physical and electrical properties of p+-Si/n-4H-SiC heterojunctions with and without being annealed fabricated by u... [more] ED2013-68 CPM2013-127 LQE2013-103
pp.21-25
ED 2013-10-23
10:50
Hokkaido Enreisou, Hokkaido Univ. Performance of electronic frequency tuning magnetron and simulation result of radar detecting capability with this magnetron
Hideyuki Obata, Kuniyoshi Furumoto, Naoki Tsuji (New Japan Radio) ED2013-61
A technological development in the design of electronic frequency tuning pulsed magnetron has the potential to dramatica... [more] ED2013-61
pp.47-52
VLD, DC, IPSJ-SLDM, CPSY, RECONF, ICD, CPM
(Joint) [detail]
2011-11-28
16:05
Miyazaki NewWelCity Miyazaki CMOS Op-amp Offset Calibration Technique Using a Closed Loop Offset Amplifier and Compact Resistor String DAC
Hiroyuki Morimoto, Hiroaki Goto (KIT), Hajime Fujiwara (NJR), Kazuyuki Nakamura (KIT) VLD2011-65 DC2011-41
This paper describes the development of a circuit system that enables the offset calibration of an op-amp circuit after ... [more] VLD2011-65 DC2011-41
pp.79-84
ED 2011-07-29
13:30
Niigata Multimedia system center, Nagaoka Univ. of Tech. Effect of C and Si co-doping high resistivity GaN buffer layer on AlGaN/GaN HFETs
Masayuki Fukai, Shusuke Kakizawa, Hiroshi Fushimi (New Japan Radio) ED2011-37
Based on Fermi level effect, we intentionally incorporated carbon into Si-doped GaN by low-temperature grown MOVPE at 95... [more] ED2011-37
pp.1-6
ED 2011-07-29
13:55
Niigata Multimedia system center, Nagaoka Univ. of Tech. Control of Interface Electric Charge by MIM Gate Structure on AlGaN/GaN HFETs
Yoshimichi Fukasawa, Eiji Waki, Hiroshi Fushimi (New Japan Radio) ED2011-38
We introduce Metal-Insulator-Metal (MIM) gate AlGaN/GaN HFETs that control the electronic charge generated on SiN/AlGaN ... [more] ED2011-38
pp.7-12
ED 2009-10-16
10:35
Fukui   Spurious Reduction Technology for Pulsed Magnetrons
Hideyuki Obata, Kuniyoshi Furumoto, Naoki Tsuji (New Japan Radio Co., Ltd.) ED2009-126
Technological developments in the design of unmodulated pulsed magnetrons have resulted in a dramatic improvement in the... [more] ED2009-126
pp.53-57
ED 2008-10-23
13:25
Fukuoka Kyushu Institute of Technology High-Voltage AlGaN/GaN Schottky Barrier Diodes on Si Substrate with Low-Temperature GaN Cap Layer for Edge Termination
Atsushi Kamada (NJRC), Takashi Egawa (NIT) ED2008-149
 [more] ED2008-149
pp.143-148
SDM, ED 2008-07-09
11:40
Hokkaido Kaderu2・7 [Invited Talk] AlGaN/GaN-based Electron Devices with Low-temperature GaN Cap Layer
Tadayoshi Deguchi (New Japan Radio), Takashi Egawa (Nagoya Inst. of Tech.) ED2008-41 SDM2008-60
We review our studies on AlGaN/GaN-based electron devices with a low-temperature GaN (LT-GaN) cap layer, such as heteros... [more] ED2008-41 SDM2008-60
pp.9-14
ED 2007-06-16
12:00
Toyama Toyama Univ. Reverse characteristics of 4H-SiC PiN diode with Vanadium ion implanted guard-ring
Shuichi Ono, Manabu Arai (NJRC) ED2007-46
We fabricated the 4H-SiC PiN diodes with mesa structure, and Vanadium ion implanted guard-ring. The reverse characterist... [more] ED2007-46
pp.79-83
ED, MW 2006-01-18
13:30
Tokyo Kikai-Shinko-Kaikan Bldg. A Low-Phase-Noise 76-GHz Planar Gunn VCO Using Flip-Chip Bonding Technology
Takashi Yoshida, Yoshimichi Fukasawa, Tadayoshi Deguchi, Kiyoshi Kawaguchi, Takahiro Sugiyama, Atsushi Nakagawa (New Japan Radio)
A low-phase-noise76-GHz planar Gunn VCO using flip-chip bonding technology has been developed. The power consumption is ... [more] ED2005-192 MW2005-146
pp.1-5
ED, MW 2006-01-19
13:20
Tokyo Kikai-Shinko-Kaikan Bldg. AlGaN/GaN HFETs with a low-temperature GaN cap layer
Tadayoshi Deguchi, Eiji Waki, Satoru Ono, Meiichi Yamashita, Atsushi Kamada, Atsushi Nakagawa (New Japan Radio), Hiroyasu Ishikawa, Takashi Egawa (Nagoya Institute of Technology)
AlGaN/GaN heterostructure field-effect transistors (HFETs) with a highly resistive, low-temperature GaN (LT-GaN) cap lay... [more] ED2005-203 MW2005-157
pp.23-27
 Results 1 - 13 of 13  /   
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