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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 37  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
SIP, CAS, VLD, MSS 2021-07-05
16:25
Online Online Thermal Comfort Aware Real-time Co-scheduling of HVAC, Battery System, and Smart Appliances for Smart Building
Daichi Watari, Ittetsu Taniguchi (Osaka Univ.), Francky Catthoor (IMEC/KUL), Charalampos Marantos (NTUA), Kostas Siozios (AUTH), Elham Shirazi (IMEC/KUL), Dimitrios Soudris (NTUA), Takao Onoye (Osaka Univ.) CAS2021-8 VLD2021-8 SIP2021-18 MSS2021-8
Building energy management is vital for reducing electricity costs and maximizing occupant comfort. This paper proposes ... [more] CAS2021-8 VLD2021-8 SIP2021-18 MSS2021-8
pp.36-41
SDM 2020-02-07
10:10
Tokyo Tokyo University-Hongo [Invited Talk] Stability of Cu Interconnect Surface after post CMP Cleaning
Yasuhiro Kawase, Toshiaki Shibata, Tomohiro Kusano (MCC), Ken Harada (imec), Kan Takeshita (MCC) SDM2019-90
At present, more than 12 Cu interconnect layers have been formed in advanced semiconductor devices and each layer is pla... [more] SDM2019-90
pp.9-14
SDM, ICD, ITE-IST [detail] 2018-08-08
13:15
Hokkaido Hokkaido Univ., Graduate School of IST M Bldg., M151 [Invited Lecture] A Highly Symmetrical 10T 2-Read/Write Dual-port SRAM Bitcell Design In 28nm High-k/Metal-gate Planar Bulk CMOS Technology
Yuichiro Ishii, Miki Tanaka, Makoto Yabuuchi, Yohei Sawada, Shinji Tanaka, Koji Nii (Renesas), Tien Yu Lu, Chun Hsien Huang, Shou Sian Chen, Yu Tse Kuo, Ching Cheng Lung, Osbert Cheng (UMC) SDM2018-40 ICD2018-27
We propose a highly symmetrical 10T 2-read/write (2RW) dual-port (DP) SRAM bitcell in 28-nm high-k/metal-gate planar bul... [more] SDM2018-40 ICD2018-27
pp.83-88
ICD 2017-04-21
13:50
Tokyo   [Invited Lecture] Embedded Memory and ARM Cortex-M0 Core Using 60-nm CAAC-IGZO FET Integrated with 65-nm Si CMOS
Tatsuya Onuki, Atsuo Isobe, Yoshinori Ando, Satoru Okamoto, Kiyoshi Kato (Semiconductor Energy Laboratory), T R Yew, Chen Bin Lin, J Y Wu, Chi Chang Shuai, Shao Hui Wu (United Microelectronics Corporation), James Myers (ARM), Klaus Doppler (Nokia Technologies), Masahiro Fujita (The Univ. of Tokyo), Shunpei Yamazaki (Semiconductor Energy Laboratory) ICD2017-17
 [more] ICD2017-17
pp.89-93
VLD, DC, CPSY, RECONF, CPM, ICD, IE
(Joint) [detail]
2016-11-28
15:30
Osaka Ritsumeikan University, Osaka Ibaraki Campus Circuit Simulation Method Using Bimodal Defect-Centric Model of Random Telegraph Noise on 40 nm SiON Process
Michitarou Yabuuchi, Azusa Oshima, Takuya Komawaki, Kazutoshi Kobayashi, Ryo Kishida, Jun Furuta (KIT), Pieter Weckx (KUL/IMEC), Ben Kaczer (IMEC), Takashi Matsumoto (Univ. of Tokyo), Hidetoshi Onodera (Kyoto Univ.) VLD2016-52 DC2016-46
We propose a circuit analysis method using the bimodal RTN (random telegraph
noise) model of the defect-centric distri... [more]
VLD2016-52 DC2016-46
pp.49-54
ICD 2016-04-14
10:35
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] A 7T-SRAM with Data-Write Technique by Capacitive Coupling
Daisaburo Takashima, Masato Endo (Toshiba), Kazuhiro Shimazaki, Manabu Sai (Toshiba Microelectronics), Masaaki Tanino (Toshia Information Systems) ICD2016-2
A 7T-SRAM, in which cell data is written by capacitive coupling, is proposed. The elimination of current-drive in read/w... [more] ICD2016-2
pp.7-12
US 2015-09-03
15:20
Hokkaido   Growth of c-axis parallel oriented ZnO film by RF magnetron sputtering at low gas pressure and its application in SAW and Lamb wave devices
Shinji Takayanagi (Doshisha Univ.), Takahiko Yanagitani (Waseda Univ.), Jean-Claude Gerbedoen, Abdelkrim Talbi (IEMN), Mami Matsukawa (Doshisha Univ.), Philippe Pernod (IEMN) US2015-50
ZnO piezoelectric films are widely used for acoustic wave devices. In most cases the (0001) oriented ZnO films were used... [more] US2015-50
pp.25-30
ED 2014-12-23
10:05
Miyagi   Broadband characteristics of plasmonic terahertz detection using asymmetric dual-grating-gate high-electron-mobility transistors
Akira Satou, Stephane Bobanga Tombet, Takayuki Watanabe, Tetsuya Kawasaki, Tetsuya Suemitsu (Tohoku Univ.), Denis V Fateev, Vyacheslav V Popov (IREE), Hiroaki Minamide, Hiromasa Ito (RIKEN), Dominique Coquillat, Wojciech Knap (Univ. Montpellier 2), Guillaume Ducournau (IEMN), Taiichi Otsuji (Tohoku Univ.) ED2014-109
We compare the measured broadband characteristics of the responsivity of asymmetric dual-grating-gate high-elect... [more] ED2014-109
pp.63-67
OPE, LQE 2014-12-19
10:30
Tokyo Kikai-Shinko-Kaikan, NTT Atsugi R&D center [Invited Talk] 128Gb/s DP-QPSK Silicon Modulator Module Integrated with Driver Amplifiers
Kazuhiro Goi, Kenji Oda, Yasuhiro Mashiko, Kensuke Ogawa (Fujikura), Tsung-Yang Liow, Xiaoguang Tu, Guo-Qiang Lo, Dim-Lee Kwong (IME) OPE2014-142 LQE2014-129
We report a silicon optical modulator module for digital coherent networks. A silicon modulator chip in the module conta... [more] OPE2014-142 LQE2014-129
pp.15-20
SDM 2014-06-19
11:05
Aichi VBL, Nagoya Univ. Control of Stacking Fault Structures in Ge1-xSnx Epitaxial Growth
Takanori Asano (Nagoya Univ.), Noriyuki Taoka (IHP Microelectronics), Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2014-47
Ge or Ge1-xSnx layer with (110) surface has attracted much attentions for Ge multi-gate MOS transistors. For forming a h... [more] SDM2014-47
pp.21-25
ICD 2014-04-18
10:30
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] A 7ns-Access-Time 25μW/MHz 128kb SRAM for Low-Power Fast Wake-Up MCU in 65nm CMOS with 27fA/b Retention Current
Toshikazu Fukuda, Koji Kohara, Toshiaki Dozaka, Yasuhisa Takeyama, Tsuyoshi Midorikawa (Toshiba), Kenji Hashimoto, Ichiro Wakiyama (TOSMEC), Shinji Miyano, Takehiko Hojo (Toshiba) ICD2014-12
Low leakage 128kb SRAM with 65 nm technology that consumes only 3.5nA (27fA/b) in the retention mode is fabricated. Oper... [more] ICD2014-12
pp.59-64
VLD 2014-03-04
13:20
Okinawa Okinawa Seinen Kaikan [Invited Talk] Advanced Model-Based Hotspot Fix Flow for Layout Optimization with Genetic Algorithm
Shuhei Sota (Toshiba Microelectronics), Taiga Uno, Masanari Kajiwara, Chikaaki Kodama (Toshiba), Hirotaka Ichikawa (Toshiba Microelectronics), Ryota Aburada, Toshiya Kotani (Toshiba), Kei Nakagawa, Tamaki Saito (Toshiba Microelectronics) VLD2013-148
Under the low-k1 lithography process, many hotspots are generated and their reduction is an urgent issue for mass produc... [more] VLD2013-148
p.85
VLD 2014-03-04
14:40
Okinawa Okinawa Seinen Kaikan Self-Aligned Double and Quadruple Patterning-Aware Grid Routing
Chikaaki Kodama (Toshiba), Hirotaka Ichikawa (Toshiba Microelectronics), Fumiharu Nakajima, Koichi Nakayama, Shigeki Nojima, Toshiya Kotani (Toshiba) VLD2013-151
Self-Aligned Double and Quadruple Patterning (SADP, SAQP) are leading candidates for sub-$20~nm$ and sub-$14~nm$ node an... [more] VLD2013-151
pp.99-104
SDM, ICD 2013-08-02
11:15
Ishikawa Kanazawa University [Invited Talk] An LDPC Decoder with Time Domain Analog and Digital Mixed Signal Processing
Daisuke Miyashita, Ryo Yamaki (Toshiba), Kazunori Hashiyoshi (Toshiba Microelectronics), Hiroyuki Kobayashi, Shouhei Kousai, Yukihito Oowaki, Yasuo Unekawa (Toshiba) SDM2013-79 ICD2013-61
Analog computation is potentially more efficient in certain arithmetic operations since a single wire can represent mult... [more] SDM2013-79 ICD2013-61
pp.71-76
CAS 2013-01-29
10:15
Oita Beppu International Convention Center All-Digital Calibration of Time-Interleaved Analog-to-Digital Converter with Fast Convergence
Takeshi Nozaki (Fujitsu Microelectronics Solutions LTD.), Masato Yoshioka (Fujitsu Lab), Souyou Setsu (Fujitsu Microelectronics Solutions LTD.), Sadayoshi Umeda (Fujitsu Semiconductor LTD.), Sanroku Tsukamoto (Fujitsu Lab) CAS2012-81
Time-interleaved (TI) analog-to-digital converters (ADCs) use several ADCs in parallel, and are effective way to substan... [more] CAS2012-81
pp.89-94
OPE 2012-12-21
14:55
Tokyo Kikai-Shinko-Kaikan Bldg. Optical performance monitoring of silicon Mach-Zender modulator by monolithically integrated GePD
Hiroyuki Kusaka, Akira Oka, Kazuhiro Goi, Kensuke Ogawa (Fujikura), Tsung-Yang Liow, Xiaoguang Tu, Guo-Qiang Lo, Dim-Lee Kwong (IME) OPE2012-138
 [more] OPE2012-138
pp.21-26
OPE, LQE, OCS 2012-10-26
11:15
Miyazaki   10Gb/s 80km optical-fiber transmission using silicon Mach-Zehnder modulator
Kazuhiro Goi, Hiroyuki Kusaka, Kenji Oda, Yoshihiro Terada, Kensuke Ogawa (Fujikura), Tsung-Yang Liow, Xiaoguang Tu, Guo-Qiang Lo, Dim-Lee Kwong (IME) OCS2012-64 OPE2012-115 LQE2012-81
Transmission performance of a push-pull driven silicon Mach-Zehnder modulator having silicon rib waveguide with lateral ... [more] OCS2012-64 OPE2012-115 LQE2012-81
pp.121-124
CPM 2012-08-08
15:20
Yamagata   High-Performance Bottom-Contact Organic TFT using Cu Electrode
Yuya Utsuno, Tsubasa Sato (Yamagata Univ.), Shinya Oku, Makoto Mizukami (Yamagata Univ. ROEL), Kenjiro Fukuda, Daisuke Kumaki, Shizuo Tokito (Yamagata Univ./Yamagata Univ. ROEL) CPM2012-38
Gold is generally used for the source and drain electrodes of organic thin-film transistors (OTFTs). However, the cost o... [more] CPM2012-38
pp.23-25
ED 2012-04-19
09:50
Yamagata Yamagata University Bottom-contact Organic Thin Film Transistor using Copper electrode
Yuya Utsuno (Yamagata Univ.), Shinya Oku, Makoto Mizukami (ROEL), Daisuke Kumaki, Shizuo Tokito (Yamagata Univ.) ED2012-13
Gold is generally used for the source and drain electrodes of organic thin-film transistors (OTFTs). However, the cost o... [more] ED2012-13
pp.55-57
OPE 2011-12-16
15:50
Tokyo Kikai-Shinko-Kaikan Bldg. 10Gbps high-extinction-ratio silicon Mach-Zehnder modulator
Kazuhiro Goi, Kensuke Ogawa, Yong-Tsong Tan (Fujikura), Tsung-Yang Liow, Xiaoguang Tu, Qing Fang, Guo-Qiang Lo, Dim-Lee Kwong (IME) OPE2011-147
The design of silicon Mach-Zehnder modulator and measurement of 10Gbps OOK and BPSK is reported. The phase shifter was d... [more] OPE2011-147
pp.33-38
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