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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, SDM, R 2006-11-24
15:15		 Osaka Central Electric Club Effects of heterointerface flatness on device performance of InP-based HEMT -- Reduction of interface roughness scattering using (411)A-oriented substrate --
Issei Watanabe (NICT), Keisuke Shinohara (Rockwell), Takahiro Kitada (Univ.of Tokushima), Satoshi Shimomura (Ehimeiv.), Akira Endoh, Yoshimi Yamashita, Takashi Mimura (Fujitsu Labs.), Satoshi Hiyamizu (Osaka Univ./Nara National College of Tech.), Toshiaki Matsui (NICT) 		 [more] R2006-35 ED2006-180 SDM2006-198
pp.21-25
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